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公开(公告)号：US08753527B2
公开(公告)日：2014-06-17
申请号：US13128951
申请日：2009-11-11
CPC分类号： H01L21/67069 , H01J37/32192 , H01L21/3065 , H01L21/76229
摘要： A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.
摘要翻译： 等离子体蚀刻方法使用等离子体蚀刻装置，其包括处理室，基座，微波供给部，气体供给部，排气装置，向基座提供交流偏置电力的偏置电力供给部，偏置 电力控制部分，其控制所述交流偏置电力，其中所述偏置电力控制部分控制所述交流偏压电力，使得向所述基座提供和断开所述交流偏置电力交替地重复，以允许所述交流偏置电力的时间段 将交流偏压电力提供给交流偏压电力的总时间并将交流偏压电力断开为0.1以上且0.5以下的交流偏压电力供给。
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公开(公告)号：US20110266257A1
公开(公告)日：2011-11-03
申请号：US13128951
申请日：2009-11-11
CPC分类号： H01L21/67069 , H01J37/32192 , H01L21/3065 , H01L21/76229
摘要： A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.
摘要翻译： 等离子体蚀刻方法使用等离子体蚀刻装置，其包括处理室，基座，微波供给部，气体供给部，排气装置，向基座提供交流偏置电力的偏置电力供给部，偏置 电力控制部分，其控制所述交流偏置电力，其中所述偏置电力控制部分控制所述交流偏压电力，使得向所述基座提供和断开所述交流偏置电力交替地重复，以允许所述交流偏置电力的时间段 将交流偏压电力提供给交流偏压电力的总时间并将交流偏压电力断开为0.1以上且0.5以下的交流偏压电力供给。
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公开(公告)号：US20130071955A1
公开(公告)日：2013-03-21
申请号：US13234449
申请日：2011-09-16
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01J37/32238 , H01J37/3244 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L22/20
摘要： A method for processing a substrate to form a desired pattern by an etching process after forming a mask pattern over the substrate includes the steps of: forming two layers over the substrate; measuring a width of the mask pattern or an etched pattern of one of the two layers; and adjusting a flow rate of any one of HBr and other gases, used in the etching process, based on the measured width. The two layers may include a silicon nitride layer and an organic dielectric layer.
摘要翻译： 在衬底上形成掩模图案之后通过蚀刻工艺处理衬底以形成期望图案的方法包括以下步骤：在衬底上形成两层; 测量所述掩模图案的宽度或所述两层之一的蚀刻图案; 并且基于所测量的宽度调节在蚀刻工艺中使用的HBr和其它气体中的任何一种的流速。 两层可以包括氮化硅层和有机电介质层。
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公开(公告)号：US08765589B2
公开(公告)日：2014-07-01
申请号：US12673923
申请日：2008-08-26
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/32137 , H01L21/28 , H01L21/28008 , H01L21/306 , H01L29/66795 , H01L29/785
摘要： A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.
摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成具有突出部分的绝缘层，所述绝缘层具有从所述表面向上突出的表面和上升表面; 形成导电层以覆盖具有突出部分的绝缘层; 并且通过使用微波等离子体（其使用微波作为等离子体源）的蚀刻工艺，在半导体衬底上施加70mW / cm 2或更高的偏置功率，在所述半导体衬底上施加预定区域，从而去除所述导电层的预定区域 85 mTorr以上高压条件。
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公开(公告)号：US20110039407A1
公开(公告)日：2011-02-17
申请号：US12673923
申请日：2008-08-26
IPC分类号： H01L21/336
CPC分类号： H01L21/32137 , H01L21/28 , H01L21/28008 , H01L21/306 , H01L29/66795 , H01L29/785
摘要： A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.
摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成具有突出部分的绝缘层，所述绝缘层具有从所述表面向上突出的表面和上升表面; 形成导电层以覆盖具有突出部分的绝缘层; 并且通过使用微波等离子体（其使用微波作为等离子体源）的蚀刻工艺，在半导体衬底上施加70mW / cm 2或更高的偏置功率，在所述半导体衬底上施加预定区域，从而去除所述导电层的预定区域 85 mTorr以上高压条件。
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公开(公告)号：US08930659B2
公开(公告)日：2015-01-06
申请号：US11909883
申请日：2006-03-30
申请人： Masahiko Takahashi
发明人： Masahiko Takahashi
CPC分类号： G06F12/0238 , G06F9/445 , G06F12/0292 , G06F12/08 , G06F12/1027 , G06F2212/2022 , G06F2212/401 , G06F2212/68 , G06F2212/7201
摘要： A computer system, having a non-volatile storage unit (152), a main storage unit (151), and a data processor (102) including a memory management unit (102A) for managing a program stored in the non-volatile storage unit and the main storage unit to transfer a program stored in the non-volatile storage unit to the main storage unit, wherein the memory management unit (102A) includes a program storage control function of storing a program subjected to predetermined data conversion and a program yet to be subjected to predetermined data conversion in the non-volatile storage unit, and a function of combining programs subjected to predetermined data conversion so as not to bridge over a boundary between blocks at the execution of the program storage control function, as well as, at a first access to a certain block, expanding all the data included in the block to a corresponding block of the main storage unit.
摘要翻译： 一种具有非易失性存储单元（152），主存储单元（151）和数据处理器（102）的计算机系统，包括用于管理存储在非易失性存储单元中的程序的存储器管理单元（102A） 以及主存储单元，用于将存储在非易失性存储单元中的程序传送到主存储单元，其中存储器管理单元（102A）包括存储经过预定数据转换的程序和程序的程序存储控制功能 在非易失性存储单元中进行预定的数据转换，以及将执行预定的数据转换的程序组合起来，以便在执行程序存储控制功能时不跨越块之间的边界， 在对某个块的第一次访问时，将包括在块中的所有数据扩展到主存储单元的相应块。
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公开(公告)号：US20120211205A1
公开(公告)日：2012-08-23
申请号：US13318957
申请日：2010-09-15
申请人： Tsuyoshi Eguchi , Atsusi Suzuki , Seiji Sato , Masahiko Takahashi
发明人： Tsuyoshi Eguchi , Atsusi Suzuki , Seiji Sato , Masahiko Takahashi
IPC分类号： F04D29/44 , H01L23/467
CPC分类号： F04D17/16 , F04D29/281 , F04D29/4226 , F04D29/441 , F04D29/681 , F05D2250/52
摘要： In a multi-blade centrifugal fan in which an impeller is provided in a scroll casing in a freely rotatable manner, the scroll casing is provided with an axially expanded portion that forms an air channel at a bottom surface thereof which is expanded in a rotation-axis direction at a radially outer side of an annular flange portion which supports the impeller; and is provided, in a region of an outlet between a tongue portion and a spiral-end portion of the scroll casing in the axially expanded portion, with a protrusion that protrudes radially outward from a radially inner side surface by a predetermined amount so as to directly face an airflow in a circumferential direction.
摘要翻译： 在涡旋壳体中以可自由旋转的方式设置叶轮的多叶片离心式风扇中，涡旋壳体设置有轴向膨胀部，该轴向扩张部在其底面形成有空气通道， 在支撑叶轮的环形凸缘部的径向外侧的轴线方向; 并且在轴向膨胀部分的涡旋壳体的舌部和螺旋端部之间的出口的区域中设置有从径向内侧表面径向向外突出预定量的突起，以便 直接面向圆周方向的气流。
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8.发明授权公开(公告)号：US08228769B2
公开(公告)日：2012-07-24
申请号：US13042916
申请日：2011-03-08
申请人： Shinji Fujita , Masahiko Takahashi
发明人： Shinji Fujita , Masahiko Takahashi
IPC分类号： G11B5/00
CPC分类号： G11B7/00456 , G11B7/0062 , G11B7/1267
摘要： An optical disc recording method of suppressing variations in the record quality due to variations in an initial strategy of a write strategy using many parameters corresponding to a next-generation large-capacity optical disc. Modulation conditions for recorded data on the optical disc are determined based on a real measurement thereof; an initial strategy that meets the modulation conditions is determined; an optical strategy is determined in which the record quality is best in the vicinity of the initial strategy; and data is recorded on the optical disc, using the optimal strategy.
摘要翻译： 一种光盘记录方法，其使用与下一代大容量光盘相对应的许多参数来抑制由写入策略的初始策略的变化引起的记录质量的变化。 基于其实际测量确定光盘上记录数据的调制条件; 确定满足调制条件的初始策略; 确定在初始策略附近记录质量最好的光学策略; 并使用最佳策略将数据记录在光盘上。
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9.发明授权Inductance device, filter device comprising the same, and noise filter comprising the same 有权电感器件，包括该电感器件的滤波器器件和包括该滤波器的噪声滤波器公开(公告)号：US07714683B2
公开(公告)日：2010-05-11
申请号：US11973610
申请日：2007-10-09
CPC分类号： H01F17/062 , H01F27/40 , H01G4/00 , H03H7/427 , H03H2001/0057 , H03H2001/0092
摘要： An inductance device comprises a magnetic core, a coil a conductor and a dielectric member. The coil is made of turns of insulated conductive wire. The conductor is distinct from the coil and is insulated from the magnetic core. The dielectric member is disposed between the conductor and the coil. The dielectric member, the conductor and the coil constitute a capacitor. The inductance device is used in, for example, a filter device or a noise filter.
摘要翻译： 电感装置包括磁芯，线圈，导体和电介质构件。 线圈由绝缘导线的匝组成。 导体与线圈不同，与磁芯绝缘。 电介质构件设置在导体和线圈之间。 电介质构件，导体和线圈构成电容器。 电感器件用于例如滤波器或噪声滤波器。
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公开(公告)号：US20090246965A1
公开(公告)日：2009-10-01
申请号：US12410504
申请日：2009-03-25
申请人： Takuya Mori , Masahiko Takahashi
发明人： Takuya Mori , Masahiko Takahashi
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/3222 , H01J37/32238
摘要： Provided is an etching method capable of increasing a selectivity of a polysilicon film with respect to a silicon oxide film and suppressing the formation of recesses in a silicon base material. A wafer includes a gate oxide film, a polysilicon film and a hard mask film having an opening sequentially formed on a silicon base material, and has a native oxide film in a trench of the polysilicon film corresponding to the opening formed thereon. The native oxide film is etched, so that the polysilicon film is exposed at a bottom portion of the trench. An ambient pressure is set to be 13.3 Pa, and O2 gas, HBr gas and Ar gas are supplied to a processing space, and a frequency of bias voltage is set to be 13.56 MHz, so that the polysilicon film is etched by the plasma generated from the HBr gas to be completely removed.
摘要翻译： 提供了能够提高多晶硅膜相对于氧化硅膜的选择性并抑制硅基材料中的凹部的形成的蚀刻方法。 晶片包括栅极氧化膜，多晶硅膜和具有依次形成在硅基材料上的开口的硬掩模膜，并且在与其上形成的开口对应的多晶硅膜的沟槽中具有自然氧化膜。 蚀刻自然氧化膜，使得多晶硅膜暴露在沟槽的底部。 将环境压力设定为13.3Pa，向加工空间供给O 2气体，HBr气体和Ar气体，将偏置电压的频率设定为13.56MHz，由此产生多晶硅膜 从HBr气体中完全去除。
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