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公开(公告)号：US08753527B2
公开(公告)日：2014-06-17
申请号：US13128951
申请日：2009-11-11
CPC分类号： H01L21/67069 , H01J37/32192 , H01L21/3065 , H01L21/76229
摘要： A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.
摘要翻译： 等离子体蚀刻方法使用等离子体蚀刻装置，其包括处理室，基座，微波供给部，气体供给部，排气装置，向基座提供交流偏置电力的偏置电力供给部，偏置 电力控制部分，其控制所述交流偏置电力，其中所述偏置电力控制部分控制所述交流偏压电力，使得向所述基座提供和断开所述交流偏置电力交替地重复，以允许所述交流偏置电力的时间段 将交流偏压电力提供给交流偏压电力的总时间并将交流偏压电力断开为0.1以上且0.5以下的交流偏压电力供给。
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公开(公告)号：US20110266257A1
公开(公告)日：2011-11-03
申请号：US13128951
申请日：2009-11-11
CPC分类号： H01L21/67069 , H01J37/32192 , H01L21/3065 , H01L21/76229
摘要： A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.
摘要翻译： 等离子体蚀刻方法使用等离子体蚀刻装置，其包括处理室，基座，微波供给部，气体供给部，排气装置，向基座提供交流偏置电力的偏置电力供给部，偏置 电力控制部分，其控制所述交流偏置电力，其中所述偏置电力控制部分控制所述交流偏压电力，使得向所述基座提供和断开所述交流偏置电力交替地重复，以允许所述交流偏置电力的时间段 将交流偏压电力提供给交流偏压电力的总时间并将交流偏压电力断开为0.1以上且0.5以下的交流偏压电力供给。
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3.发明申请PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权等离子体蚀刻装置，等离子体蚀刻方法和半导体器件制造方法公开(公告)号：US20120064726A1
公开(公告)日：2012-03-15
申请号：US13232160
申请日：2011-09-14
申请人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
发明人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32706 , H01L21/31116 , H01L21/76224 , H01L21/76897 , H01L29/6653 , H01L29/6656
摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.
摘要翻译： 提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。 等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。
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4.发明授权Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method 有权等离子体蚀刻装置，等离子体蚀刻方法和半导体装置的制造方法公开(公告)号：US08969210B2
公开(公告)日：2015-03-03
申请号：US13232160
申请日：2011-09-14
申请人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
发明人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/311 , H01L21/762 , H01L21/768 , H01L29/66
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32706 , H01L21/31116 , H01L21/76224 , H01L21/76897 , H01L29/6653 , H01L29/6656
摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.
摘要翻译： 提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。 等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。
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公开(公告)号：US08765589B2
公开(公告)日：2014-07-01
申请号：US12673923
申请日：2008-08-26
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/32137 , H01L21/28 , H01L21/28008 , H01L21/306 , H01L29/66795 , H01L29/785
摘要： A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.
摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成具有突出部分的绝缘层，所述绝缘层具有从所述表面向上突出的表面和上升表面; 形成导电层以覆盖具有突出部分的绝缘层; 并且通过使用微波等离子体（其使用微波作为等离子体源）的蚀刻工艺，在半导体衬底上施加70mW / cm 2或更高的偏置功率，在所述半导体衬底上施加预定区域，从而去除所述导电层的预定区域 85 mTorr以上高压条件。
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公开(公告)号：US20110039407A1
公开(公告)日：2011-02-17
申请号：US12673923
申请日：2008-08-26
IPC分类号： H01L21/336
CPC分类号： H01L21/32137 , H01L21/28 , H01L21/28008 , H01L21/306 , H01L29/66795 , H01L29/785
摘要： A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.
摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成具有突出部分的绝缘层，所述绝缘层具有从所述表面向上突出的表面和上升表面; 形成导电层以覆盖具有突出部分的绝缘层; 并且通过使用微波等离子体（其使用微波作为等离子体源）的蚀刻工艺，在半导体衬底上施加70mW / cm 2或更高的偏置功率，在所述半导体衬底上施加预定区域，从而去除所述导电层的预定区域 85 mTorr以上高压条件。
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公开(公告)号：US20100032094A1
公开(公告)日：2010-02-11
申请号：US12441429
申请日：2008-08-20
IPC分类号： H01L21/306 , C23C16/54
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分， 表面朝向处理室的内部。
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公开(公告)号：US08809199B2
公开(公告)日：2014-08-19
申请号：US13026232
申请日：2011-02-12
申请人： Tetsuya Nishizuka
发明人： Tetsuya Nishizuka
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32192 , H01L21/31144
摘要： A processing method is provided for plasma etching features in a silicon nitride (SiN) film covered by a mask pattern. The method includes preparing a film stack on a substrate, the film stack containing a SiN film on the substrate and a mask pattern on the SiN film, forming a plasma from a process gas containing HBr gas, O2 gas, and a carbon-fluorine-containing gas, applying pulsed RF bias power to the substrate, and transferring the mask pattern to the SiN film by exposing the film stack to the plasma.
摘要翻译： 提供了用掩模图案覆盖的氮化硅（SiN）膜中的等离子体蚀刻特征的处理方法。 该方法包括在基板上制备薄膜叠层，薄膜叠层在基片上含有SiN薄膜，SiN薄膜上形成掩模图形，从含有HBr气体，O2气体和碳氟层的工艺气体形成等离子体， 向衬底施加脉冲RF偏置功率，并通过将膜堆暴露于等离子体将掩模图案转移到SiN膜。
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公开(公告)号：US08343308B2
公开(公告)日：2013-01-01
申请号：US12441429
申请日：2008-08-20
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部， 面向处理室的内部。
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10.发明申请公开(公告)号：US20100243605A1
公开(公告)日：2010-09-30
申请号：US12438588
申请日：2007-08-21
申请人： Tetsuya Nishizuka
发明人： Tetsuya Nishizuka
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32165 , H01J37/32192 , H01L21/76802
摘要： Disclosed is an etching method for performing an etching process on an etching target film, which has a dielectric constant smaller than that of a SiO2 film and is formed on a surface of a target object. The etching method includes: mounting the target object on a mounting table in a processing vessel configured to be evacuable; supplying a predetermined etching gas into the processing vessel and converting the etching gas into plasma; and applying a high frequency power of a preset frequency to the mounting table as a bias power under the presence of the etching gas in plasma state. The step of applying the high frequency power includes: a first step of applying a high frequency power of a first frequency as the bias power; and a second step of applying a high frequency power of a second frequency different from the first frequency as the bias power.
摘要翻译： 公开了一种用于对蚀刻目标膜进行蚀刻处理的蚀刻方法，该蚀刻目标膜的介电常数小于SiO 2膜的介电常数，并形成在目标物体的表面上。 蚀刻方法包括：将目标物体安装在构造成可排空的处理容器中的安装台上; 将预定的蚀刻气体供应到处理容器中并将蚀刻气体转换成等离子体; 以及在等离子体状态的蚀刻气体的存在下，将作为偏置功率的预设频率的高频电力施加到所述安装台。 施加高频功率的步骤包括：施加第一频率的高频功率作为偏置功率的第一步骤; 以及施加与第一频率不同的第二频率的高频功率作为偏置功率的第二步骤。
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