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    Delta-doped hybrid advanced detector for low energy particle detection
    2.
    发明授权
    Delta-doped hybrid advanced detector for low energy particle detection 有权
    用于低能量粒子检测的三角混合高级检测器

    公开(公告)号：US06346700B1

    公开(公告)日：2002-02-12

    申请号：US09546837

    申请日：2000-04-11

    申请人： Thomas J. Cunningham ,  Eric R. Fossum ,  Shouleh Nikzad ,  Bedabrata Pain ,  George A. Soli

    发明人： Thomas J. Cunningham ,  Eric R. Fossum ,  Shouleh Nikzad ,  Bedabrata Pain ,  George A. Soli

    IPC分类号： H01L3100

    CPC分类号： H01L27/14634

    摘要： A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.

    摘要翻译： 提供了一种三角掺杂混合高级检测器（HAD），其结合了至少四种类型的技术，以产生能量范围从几百电子伏特（eV）到超过几百万eV的能量粒子的检测器。 检测器对从可见光到X射线的光子敏感。 检测器对大约10keV到几百eV的高能量敏感性。 该检测器以毫瓦功率消耗运行，并允许阵列的非顺序读出，实现各种先进的读出方案。

    Synthetic foveal imaging technology
    6.
    发明授权
    Synthetic foveal imaging technology 有权
    合成中心凹成像技术

    公开(公告)号：US08582805B2

    公开(公告)日：2013-11-12

    申请号：US12265387

    申请日：2008-11-05

    申请人： Steve P. Monacos ,  Michael E. Hoenk ,  Shouleh Nikzad

    发明人： Steve P. Monacos ,  Michael E. Hoenk ,  Shouleh Nikzad

    IPC分类号： G06K9/00 ,  H04N7/18 ,  H04N5/225

    CPC分类号： G06K9/3233 ,  G06T7/246 ,  G06T2207/10021 ,  G06T2207/30252

    摘要： Apparatuses and methods are disclosed that create a synthetic fovea in order to identify and highlight interesting portions of an image for further processing and rapid response. Synthetic foveal imaging implements a parallel processing architecture that uses reprogrammable logic to implement embedded, distributed, real-time foveal image processing from different sensor types while simultaneously allowing for lossless storage and retrieval of raw image data. Real-time, distributed, adaptive processing of multi-tap image sensors with coordinated processing hardware used for each output tap is enabled. In mosaic focal planes, a parallel-processing network can be implemented that treats the mosaic focal plane as a single ensemble rather than a set of isolated sensors. Various applications are enabled for imaging and robotic vision where processing and responding to enormous amounts of data quickly and efficiently is important.

    摘要翻译： 公开了创建合成中央凹的装置和方法，以便识别和突出图像的有趣部分用于进一步处理和快速响应。 合成中央凹成像实现并行处理架构，其使用可重编程逻辑来实现来自不同传感器类型的嵌入式，分布式实时中心凹图像处理，同时允许对原始图像数据进行无损存储和检索。 实现，分布式，自适应处理多点图像传感器，并配合每个输出抽头使用的处理硬件。 在马赛克焦平面中，可以实现将马赛克焦平面视为单一集合而不是一组隔离传感器的并行处理网络。 各种应用都可用于成像和机器人视觉，其中快速有效地处理和响应大量数据很重要。

    ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS
    8.
    发明申请
    ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS 有权
    化学钝化层的原子层沉积和反向照射探测器上的高性能抗反射涂层

    公开(公告)号：US20110316110A1

    公开(公告)日：2011-12-29

    申请号：US13167677

    申请日：2011-06-23

    申请人： Michael E. Hoenk ,  Frank Greer ,  Shouleh Nikzad

    发明人： Michael E. Hoenk ,  Frank Greer ,  Shouleh Nikzad

    IPC分类号： H01L31/09 ,  H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/02161 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/101 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

    摘要翻译： 背照式硅光电检测器具有沉积在氧化硅表面上的Al 2 O 3层，其接收待检测的电磁辐射。 Al2O3层具有沉积在其上的抗反射涂层。 Al2O3层在氧化硅表面和抗反射涂层之间提供耐化学腐蚀的分离层。 Al2O3层足够薄，使其光学无害。 在深紫外辐射下，氧化硅层和抗反射涂层不会发生化学反应。 在一个实施例中，硅光电检测器在氧化硅表面附近（在几纳米内）具有δ-掺杂层。 预期Al 2 O 3层可以为使用诸如MBE，离子注入和CVD沉积的其它方法制造的掺杂层提供类似的保护。

    Piezoelectrically enhanced photocathode
    9.
    发明授权
    Piezoelectrically enhanced photocathode 失效
    压电增强光电阴极

    公开(公告)号：US07592747B1

    公开(公告)日：2009-09-22

    申请号：US11056633

    申请日：2005-02-09

    申请人： Robert A. Beach ,  Shouleh Nikzad ,  Robert P. Strittmatter ,  Lloyd Douglas Bell

    发明人： Robert A. Beach ,  Shouleh Nikzad ,  Robert P. Strittmatter ,  Lloyd Douglas Bell

    IPC分类号： H01J40/06

    CPC分类号： H01J40/06 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50

    摘要： A photocathode, for generating electrons in response to incident photons in a photodetector, includes a base layer having a first lattice structure and an active layer having a second lattice structure and epitaxially formed on the base layer, the first and second lattice structures being sufficiently different to create a strain in the active layer with a corresponding piezoelectrically induced polarization field in the active layer, the active layer having a band gap energy corresponding to a desired photon energy.

    摘要翻译： 用于响应光电检测器中的入射光子产生电子的光电阴极包括具有第一晶格结构的基底层和具有第二晶格结构并且外延形成在基底层上的有源层，第一和第二晶格结构充分不同 在活性层中产生具有对应的压电感应极化场的有源层中的应变，有源层具有对应于所需光子能量的带隙能量。

    ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS
    10.
    发明申请
    ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS 有权
    用于生产图像的原始精密表面工程

    公开(公告)号：US20120168891A1

    公开(公告)日：2012-07-05

    申请号：US13281295

    申请日：2011-10-25

    申请人： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    发明人： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    IPC分类号： H01L31/18 ,  H01L31/0232

    CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/1464

    摘要： High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches.

    摘要翻译： 提供高质量的表面涂层以及结合分子束外延原子精度和原子层沉积的技术，以制造这种高质量的表面涂层。 根据本发明提出的技术制成的涂层被证明能够形成在近紫外（155nm-300nm）的世界记录检测器量子效率（> 50％）的硅CCD检测器。 使用的表面工程方法证明了通过在涂层制造过程中的所有步骤实现原子级精度而获得的检测器性能的鲁棒性。 作为概念证明，产生的表征，材料和示例性设备与其他方法的比较一起呈现。