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    ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS
    5.
    发明申请
    ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS 有权
    用于生产图像的原始精密表面工程

    公开(公告)号：US20120168891A1

    公开(公告)日：2012-07-05

    申请号：US13281295

    申请日：2011-10-25

    申请人： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    发明人： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    IPC分类号： H01L31/18 ,  H01L31/0232

    CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/1464

    摘要： High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches.

    摘要翻译： 提供高质量的表面涂层以及结合分子束外延原子精度和原子层沉积的技术，以制造这种高质量的表面涂层。 根据本发明提出的技术制成的涂层被证明能够形成在近紫外（155nm-300nm）的世界记录检测器量子效率（> 50％）的硅CCD检测器。 使用的表面工程方法证明了通过在涂层制造过程中的所有步骤实现原子级精度而获得的检测器性能的鲁棒性。 作为概念证明，产生的表征，材料和示例性设备与其他方法的比较一起呈现。

    Atomically precise surface engineering for producing imagers
    7.
    发明授权
    Atomically precise surface engineering for producing imagers 有权
    用于生成成像器的原子精密表面工程

    公开(公告)号：US09165971B2

    公开(公告)日：2015-10-20

    申请号：US13281295

    申请日：2011-10-25

    申请人： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    发明人： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    IPC分类号： H01L31/18 ,  H01L31/0232 ,  H01L27/146

    CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/1464

    摘要： High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches.

    摘要翻译： 提供高质量的表面涂层以及结合分子束外延原子精度和原子层沉积的技术，以制造这种高质量的表面涂层。 根据本发明提出的技术制成的涂层被证明能够形成在近紫外（155nm-300nm）的世界记录检测器量子效率（> 50％）的硅CCD检测器。 使用的表面工程方法证明了通过在涂层制造过程中的所有步骤实现原子级精度而获得的检测器性能的鲁棒性。 作为概念证明，产生的表征，材料和示例性设备与其他方法的比较一起呈现。

    UV IMAGING FOR INTRAOPERATIVE TUMOR DELINEATION
    8.
    发明申请
    UV IMAGING FOR INTRAOPERATIVE TUMOR DELINEATION 审中-公开
    紫外成像用于手术切除肿瘤

    公开(公告)号：US20130109977A1

    公开(公告)日：2013-05-02

    申请号：US13666915

    申请日：2012-11-01

    申请人： Shouleh Nikzad ,  Michael E. Hoenk ,  Todd J. Jones ,  Samuel R. Cheng

    发明人： Shouleh Nikzad ,  Michael E. Hoenk ,  Todd J. Jones ,  Samuel R. Cheng

    IPC分类号： A61B5/00

    CPC分类号： A61B5/0077 ,  A61B5/0042 ,  A61B5/0071 ,  A61B5/7425

    摘要： A medical imaging system and method. A UV/visible camera uses a back illuminated silicon imaging detector to observe a surface of a brain of a human subject in vivo during brain surgery for excision of a cancerous tumor. The detector can be a CCD detector or a CMOS detector. Under UV illumination, the camera can record images that can be processed to detect the location and extent of a cancerous tumor because the presence of auto-fluorescent NADH variations can be detected between normal and cancerous cells. The image data is processed in a general purpose programmable computer. In some instances, an image is also taken using visible light, and the identified cancerous region is displayed as an overlay on the visible image.

    摘要翻译： 一种医学成像系统及方法。 UV /可见照相机使用背照式硅成像检测器在大脑手术期间观察人体受试者的脑部表面以切除癌性肿瘤。 检测器可以是CCD检测器或CMOS检测器。 在UV照射下，相机可以记录可以处理的图像，以检测癌肿瘤的位置和程度，因为可以在正常细胞和癌细胞之间检测到自身荧光NADH变异的存在。 图像数据在通用可编程计算机中进行处理。 在一些情况下，也可以使用可见光拍摄图像，并且将所识别的癌区域作为可见图像上的覆盖显示。

    ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS
    9.
    发明申请
    ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS 有权
    化学钝化层的原子层沉积和反向照射探测器上的高性能抗反射涂层

    公开(公告)号：US20110316110A1

    公开(公告)日：2011-12-29

    申请号：US13167677

    申请日：2011-06-23

    申请人： Michael E. Hoenk ,  Frank Greer ,  Shouleh Nikzad

    发明人： Michael E. Hoenk ,  Frank Greer ,  Shouleh Nikzad

    IPC分类号： H01L31/09 ,  H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/02161 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/101 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

    摘要翻译： 背照式硅光电检测器具有沉积在氧化硅表面上的Al 2 O 3层，其接收待检测的电磁辐射。 Al2O3层具有沉积在其上的抗反射涂层。 Al2O3层在氧化硅表面和抗反射涂层之间提供耐化学腐蚀的分离层。 Al2O3层足够薄，使其光学无害。 在深紫外辐射下，氧化硅层和抗反射涂层不会发生化学反应。 在一个实施例中，硅光电检测器在氧化硅表面附近（在几纳米内）具有δ-掺杂层。 预期Al 2 O 3层可以为使用诸如MBE，离子注入和CVD沉积的其它方法制造的掺杂层提供类似的保护。

    Atomic layer deposition of high performance anti reflection coatings on delta-doped CCDs
    10.
    发明授权
    Atomic layer deposition of high performance anti reflection coatings on delta-doped CCDs 有权
    在δ掺杂CCD上的高性能抗反射涂层的原子层沉积

    公开(公告)号：US09123622B2

    公开(公告)日：2015-09-01

    申请号：US14185920

    申请日：2014-02-21

    申请人： Michael E. Hoenk ,  Frank Greer ,  Shouleh Nikzad

    发明人： Michael E. Hoenk ,  Frank Greer ,  Shouleh Nikzad

    IPC分类号： H01L21/02 ,  H01L27/148 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/101 ,  H01L31/18

    CPC分类号： H01L27/14806 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/101 ,  H01L31/1804 ,  Y02E10/547

    摘要： A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a region of a silicon oxide surface that is left uncovered, while deposition is inhibited in another region by a contact shadow mask. The Al2O3 layer is an antireflection coating. In addition, the Al2O3 layer can also provide a chemically resistant separation layer between the silicon oxide surface and additional antireflection coating layers. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar antireflection properties and chemical protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

    摘要翻译： 背照式硅光电检测器具有沉积在未被覆盖的氧化硅表面的区域上的Al 2 O 3层，同时通过接触阴影掩模在另一区域中抑制沉积。 Al2O3层是抗反射涂层。 此外，Al 2 O 3层还可以在氧化硅表面和附加的抗反射涂层之间提供耐化学腐蚀的分离层。 在一个实施例中，硅光电检测器在氧化硅表面附近（在几纳米内）具有δ-掺杂层。 预期Al 2 O 3层可以为使用其他方法（例如MBE，离子注入和CVD沉积）制造的掺杂层提供类似的抗反射性质和化学保​​护。