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1.发明申请公开(公告)号：US20110014437A1
公开(公告)日：2011-01-20
申请号：US12894630
申请日：2010-09-30
申请人： Thomas LÜTHGE , Rita Fügemann , Martina Inhester , Matthias Driess , Yilmaz Aksu
发明人： Thomas LÜTHGE , Rita Fügemann , Martina Inhester , Matthias Driess , Yilmaz Aksu
CPC分类号： C03C17/253 , C03C17/002 , C03C17/3417 , C03C2217/231 , C03C2218/11 , C03C2218/15 , C23C18/1216 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01B1/08 , H01L51/442 , H01L51/5203 , H01L2251/308 , Y10T428/24802 , Y10T428/249921 , Y10T428/31504 , Y10T428/31507 , Y10T428/31678 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , Y10T428/31989 , Y10T428/31993
摘要： Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.
摘要翻译： 透明导电层，制备该层的方法及其用途，其中该层基于至少一种式1的化合物，其中取代基如所定义。
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2.发明申请公开(公告)号：US20080233378A1
公开(公告)日：2008-09-25
申请号：US11778181
申请日：2007-07-16
申请人： Thomas LUTHGE , Rita Fugemann , Martina Inhester , Matthias Driess , Yilmaz Aksu
发明人： Thomas LUTHGE , Rita Fugemann , Martina Inhester , Matthias Driess , Yilmaz Aksu
IPC分类号： B32B9/04 , B05D3/00 , B32B15/00 , B32B17/06 , C07F5/00 , C07F7/22 , C07F19/00 , B32B27/32 , B32B27/36
CPC分类号： C03C17/253 , C03C17/002 , C03C17/3417 , C03C2217/231 , C03C2218/11 , C03C2218/15 , C23C18/1216 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01B1/08 , H01L51/442 , H01L51/5203 , H01L2251/308 , Y10T428/24802 , Y10T428/249921 , Y10T428/31504 , Y10T428/31507 , Y10T428/31678 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , Y10T428/31989 , Y10T428/31993
摘要： Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.
摘要翻译： 透明导电层，制备该层的方法及其用途，其中该层基于至少一种式1的化合物，其中取代基如所定义。
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3.发明授权公开(公告)号：US08137794B2
公开(公告)日：2012-03-20
申请号：US12894630
申请日：2010-09-30
CPC分类号： C03C17/253 , C03C17/002 , C03C17/3417 , C03C2217/231 , C03C2218/11 , C03C2218/15 , C23C18/1216 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01B1/08 , H01L51/442 , H01L51/5203 , H01L2251/308 , Y10T428/24802 , Y10T428/249921 , Y10T428/31504 , Y10T428/31507 , Y10T428/31678 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , Y10T428/31989 , Y10T428/31993
摘要： Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.
摘要翻译： 透明导电层，制备该层的方法及其用途，其中该层基于至少一种式1的化合物，其中取代基如所定义。
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4.发明授权公开(公告)号：US07867606B2
公开(公告)日：2011-01-11
申请号：US11778181
申请日：2007-07-16
IPC分类号： B32B9/04 , B32B15/00 , B32B17/06 , B32B27/32 , B32B27/36 , B05D3/00 , C07F5/00 , C07F7/22 , C07F19/00
CPC分类号： C03C17/253 , C03C17/002 , C03C17/3417 , C03C2217/231 , C03C2218/11 , C03C2218/15 , C23C18/1216 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01B1/08 , H01L51/442 , H01L51/5203 , H01L2251/308 , Y10T428/24802 , Y10T428/249921 , Y10T428/31504 , Y10T428/31507 , Y10T428/31678 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , Y10T428/31989 , Y10T428/31993
摘要： Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.
摘要翻译： 透明导电层，制备该层的方法及其用途，其中该层基于至少一种式1的化合物，其中取代基如所定义。
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5.发明授权Formulations comprising a mixture of ZnO cubanes and process using them to produce semiconductive ZnO layers 有权包含ZnO立方体的混合物的制剂和使用它们制备半导体ZnO层的方法公开(公告)号：US08889476B2
公开(公告)日：2014-11-18
申请号：US13123072
申请日：2009-11-04
申请人： Heiko Thiem , Juergen Steiger , Alexey Merkulov , Duy Vu Pham , Yilmaz Aksu , Stefan Schutte , Matthias Driess
发明人： Heiko Thiem , Juergen Steiger , Alexey Merkulov , Duy Vu Pham , Yilmaz Aksu , Stefan Schutte , Matthias Driess
CPC分类号： C23C18/1216 , C23C16/06 , C23C18/122 , C23C18/1233 , C23C18/1245 , C23C18/1295
摘要： The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.
摘要翻译： 本发明涉及包含a）至少两种不同的ZnO立方体，其中在SATP条件下至少一种ZnO立方体以固体形式存在，并且至少一种ZnO立方烷在SATP条件下以液体形式存在，以及b）至少 一种溶剂，用于从这些配方生产半导体ZnO层的方法，以及用于制备电子部件的配方和电子部件本身的使用。
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6.发明申请FORMULATIONS COMPRISING A MIXTURE OF ZNO CUBANES AND PROCESS USING THEM TO PRODUCE SEMICONDUCTIVE ZNO LAYERS 有权包含ZNO CUBANES混合物的配方及其制备半导体ZNO层的工艺公开(公告)号：US20110193084A1
公开(公告)日：2011-08-11
申请号：US13123072
申请日：2009-11-04
申请人： Heiko Thiem , Juergen Steiger , Alexey Merkulov , Duy Vu Pham , Yilmaz Aksu , Stefan Schutte , Matthias Driess
发明人： Heiko Thiem , Juergen Steiger , Alexey Merkulov , Duy Vu Pham , Yilmaz Aksu , Stefan Schutte , Matthias Driess
CPC分类号： C23C18/1216 , C23C16/06 , C23C18/122 , C23C18/1233 , C23C18/1245 , C23C18/1295
摘要： The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.
摘要翻译： 本发明涉及包含a）至少两种不同的ZnO立方体，其中在SATP条件下至少一种ZnO立方体以固体形式存在，并且至少一种ZnO立方烷在SATP条件下以液体形式存在，以及b）至少 一种溶剂，用于从这些配方生产半导体ZnO层的方法，以及用于制备电子部件的配方和电子部件本身的使用。
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