公开(公告)号：US20250102924A1

公开(公告)日：2025-03-27

申请号：US18474670

申请日：2023-09-26

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV

IPC: G03F7/00

Abstract: An optical apparatus is provided. The optical apparatus includes a plurality of optical fibers each configured to transmit a respective light beam. The plurality of optical fibers includes at least one first optical fiber and at least one second optical fiber. The optical apparatus also includes a first shutter module coupled to the first optical fiber and configured to adjust a first light beam in the first optical fiber in at least one aspect selected from the group consisting of light intensity, light polarization and spectral distribution when the first shutter module is closed. The second optical fiber is independent of the first shutter module. The plurality of optical fibers is bundled at one end to output a combined light beam so that a profile of the combined light beam is controlled by opening or closing the first shutter module.

公开(公告)号：US20230055423A1

公开(公告)日：2023-02-23

申请号：US17445570

申请日：2021-08-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ivan MALEEV

IPC: H01L21/66 ,  G01N21/65 ,  G01N21/41 ,  B08B3/08 ,  B08B13/00 ,  B08B7/00 ,  B08B7/04 ,  H01L21/02

Abstract: An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

公开(公告)号：US20220138921A1

公开(公告)日：2022-05-05

申请号：US17089158

申请日：2020-11-04

Applicant: Tokyo Electron Limited

Inventor： Shin-Yee LU ,  Ivan MALEEV

IPC: G06T7/00 ,  G06T5/40 ,  G06T5/20 ,  G06N3/08

Abstract: A method for detecting defects on a sample based on a defect inspection apparatus is provided. In the method, an image data set that includes defect data and non-defect data is organized. A convolutional neural network (CNN) model is defined. The CNN model is trained based on the image data set. The defects on the sample are detected based on inspection data of the defect inspection apparatus and the CNN model. The sample includes uniformly repeating structures, and the inspection data of the defect inspection apparatus is generated by filtering out signals of the uniformly repeating structures of the sample.

公开(公告)号：US20240242987A1

公开(公告)日：2024-07-18

申请号：US18620541

申请日：2024-03-28

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yaowu MA ,  Zheng YAN ,  Basanta BHADURI

IPC: H01L21/67 ,  G01K1/02 ,  G01K11/00

CPC classification number: H01L21/67248 ,  G01K1/026 ,  G01K11/00 ,  H01L21/67086

Abstract: Aspects of the disclosure provide a wet etch semiconductor-processing system, which can include a wet processing bath configured to be filled with a processing liquid and configured for one or more semiconductor samples to be placed vertically in parallel therein and immersed in the processing liquid, and a sensor optically coupled to one of the semiconductor samples. The sensor can be configured to form an illumination beam, collect bandgap photoluminescence (PL) light excited by the illumination beam onto a surface of the semiconductor sample at an illuminated spot, and measure spectral intensities of the bandgap PL light in a vicinity of a semiconductor bandgap wavelength of the semiconductor sample. The sensor can be arranged with respect to the wet processing bath such that the sensor directs the illumination beam onto the surface of the semiconductor sample at the illuminated spot and receives the bandgap PL light from the illuminated spot.

公开(公告)号：US20230057763A1

公开(公告)日：2023-02-23

申请号：US17889077

申请日：2022-08-16

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Shin-Yee LU ,  Dimitri KLYACHKO ,  Ching Ling MENG ,  Xinkang TIAN

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/677

Abstract: A semiconductor processing system includes a processing chamber configured to perform a semiconductor manufacturing process on each of a plurality of wafers. The processing chamber includes at least one consumable component, and a substrate handling module located proximate the processing chamber and in communication with the processing chamber via a wafer access port. The wafer handling module includes a wafer handling robot configured to transfer each of the wafers between to the substrate handling module and the processing chamber through the wafer access port, and an optical diagnostic system including an optical sensor configured to detect an optical signal from the at least one consumable component. A controller is configured to cause the processing chamber to perform the semiconductor manufacturing process on each respective wafer and to cause the optical diagnostic system to detect the optical signal during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

公开(公告)号：US20190056320A1

公开(公告)日：2019-02-21

申请号：US16107580

申请日：2018-08-21

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Mihail MIHAYLOV ,  Hanyou CHU ,  Ching-Ling MENG ,  Qionglin GAO ,  Yan CHEN ,  Xinkang TIAN

IPC: G01N21/41 ,  H01L21/67 ,  H01L21/02

Abstract: An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

公开(公告)号：US20250112065A1

公开(公告)日：2025-04-03

申请号：US18478946

申请日：2023-09-29

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Basanta BHADURI ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Xinkang TIAN ,  Da SONG

IPC: H01L21/67 ,  G01N21/84 ,  H01L21/66

Abstract: A system includes a vacuum chamber having a wafer chuck therein and side windows slanted relative to the wafer chuck. A wafer stage is positioned below the wafer chuck and configured to rotate the wafer chuck and move the wafer chuck vertically. Illumination optics, including an illumination corrector lens, are configured to receive light and direct the light through an illumination vacuum window of the side windows to an optical spot on the wafer. Collection optics, including a collection corrector lens, are configured to receive the light from the optical spot through a collection vacuum window of the side windows and direct the light to a detector. A transfer module is configured to move the illumination optics and the collection optics parallel to the illumination vacuum window and the collection vacuum window respectively. The illumination corrector lens and the collection corrector lens are configured to reduce chromatic aberration.

公开(公告)号：US20230055839A1

公开(公告)日：2023-02-23

申请号：US17889114

申请日：2022-08-16

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Shin-Yee LU ,  Dimitri KLYACHKO ,  Ching Ling MENG ,  Xinkang TIAN

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/677

Abstract: A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

公开(公告)号：US20220139743A1

公开(公告)日：2022-05-05

申请号：US17088885

申请日：2020-11-04

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Ching-Ling MENG ,  Xinkang TIAN

IPC: H01L21/67 ,  G01N21/55 ,  G01N21/95 ,  G01N23/2251

Abstract: An apparatus for detecting defects on a sample is provided. The apparatus includes a stage for receiving a sample to be inspected, and a first light source configured to generate an incident light beam to illuminate the sample on the stage. The first light source is configured to sequentially emit light of different wavelengths in wavelength sweeps. The apparatus also includes imaging optics for collecting light scattered from the sample and for forming a detection light beam, a detector for receiving the detection light beam and acquiring images of the sample, collection optics disposed within the detection light beam and configured to direct the detection light beam to the detector, and a first light modulator. The first light modulator is configured to filter out signals from the detection light beam, where the signals originate from uniform periodicity of uniformly repeating structures on the sample.

公开(公告)号：US20240418501A1

公开(公告)日：2024-12-19

申请号：US18501672

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Holger TUITJE ,  Basanta BHADURI ,  Ching Ling MENG ,  Da SONG ,  Xinkang TIAN

IPC: G01B11/06

Abstract: A method of film thickness measurement includes illuminating a top layer of a sample in a first region with a broadband illumination beam. The sample includes a substrate and a plurality of semiconductor structures formed between the substrate and the top layer. A first reflectivity spectrum of the sample is obtained in the first region. A first thickness of the top layer in the first region is determined by applying a top-layer model to the first reflectivity spectrum. The top-layer model is substantially unaffected by the plurality of semiconductor structures.