公开(公告)号：US20220270940A1

公开(公告)日：2022-08-25

申请号：US17675225

申请日：2022-02-18

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Nobutoshi TERASAWA ,  Fumiaki NAGAI ,  Kazuaki SASAKI ,  Hiroaki KIKUCHI ,  Masayuki KITAMURA ,  Kazuo YABE ,  Motoshi FUKUDOME ,  Tatsuya MIYAHARA ,  Eiji KIKAMA ,  Yuki TANABE ,  Tomoyuki NAGATA

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

公开(公告)号：US20220319846A1

公开(公告)日：2022-10-06

申请号：US17655247

申请日：2022-03-17

Applicant: Tokyo Electron Limited

Inventor： Tatsuya MIYAHARA ,  Daisuke SUZUKI ,  Yoshihiro TAKEZAWA ,  Yuki TANABE

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/56 ,  C23C16/52

Abstract: A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.

公开(公告)号：US20240128081A1

公开(公告)日：2024-04-18

申请号：US18481492

申请日：2023-10-05

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Toru KANAZAWA ,  Yosuke WATANABE ,  Tatsuya MIYAHARA ,  Yuki TANABE ,  Daisuke SUZUKI ,  Masahisa WATANABE ,  Keisuke SUZUKI ,  Tuhin Shuvra Basu

IPC: H01L21/02 ,  C23C16/24

CPC classification number: H01L21/02672 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592

Abstract: A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.