公开(公告)号：US20220270940A1

公开(公告)日：2022-08-25

申请号：US17675225

申请日：2022-02-18

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Nobutoshi TERASAWA ,  Fumiaki NAGAI ,  Kazuaki SASAKI ,  Hiroaki KIKUCHI ,  Masayuki KITAMURA ,  Kazuo YABE ,  Motoshi FUKUDOME ,  Tatsuya MIYAHARA ,  Eiji KIKAMA ,  Yuki TANABE ,  Tomoyuki NAGATA

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

公开(公告)号：US20160276206A1

公开(公告)日：2016-09-22

申请号：US15064856

申请日：2016-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirofumi KANEKO ,  Tomoyuki NAGATA

IPC: H01L21/687 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32633 ,  H01J37/32779 ,  H01J37/32834 ,  H01L21/67017 ,  H01L21/67109

Abstract: A substrate processing apparatus includes: a substrate holder which holds a plurality of substrates; a processing vessel including an inner tube and an outer tube disposed outside the inner tube; a gas supply part which supplies a process gas in parallel to target surfaces of the substrates; an exhaust part which exhausts the process gas from the processing vessel through a gas outlet; an exhaust port formed in the inner tube; and a rectifying plate installed in an outer wall of the inner tube or an inner wall of the outer tube between the exhaust port and the gas outlet in a circumferential direction of the processing vessel. The rectifying plate is installed to extend upward from a position below a lower end of the substrate holder to a location corresponding at least to a lower end of the exhaust port.

Abstract translation: 基板处理装置包括：保持多个基板的基板保持件; 处理容器，包括设置在内管外部的内管和外管; 气体供给部，其与所述基板的目标面平行地供给处理气体; 排气部，其通过气体出口排出来自处理容器的处理气体; 形成在内管中的排气口; 以及在处理容器的圆周方向上安装在内管的外壁或外管的内壁之间的排气口和排气口与气体出口之间的整流板。 整流板被安装成从衬底保持器的下端下方的位置向上延伸到至少对应于排气口的下端的位置。

公开(公告)号：US20140187024A1

公开(公告)日：2014-07-03

申请号：US14141777

申请日：2013-12-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Takahiro MIYAHARA ,  Tomoyuki NAGATA

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0262

Abstract: Provided is a method of forming a seed layer as a seed of a thin film on an underlayer, which includes: forming a first seed layer on a surface of the underlayer by heating the underlayer, followed by supplying an aminosilane-based gas onto the surface of the heated underlayer; and forming a second seed layer on the surface of the underlayer with the first seed layer formed thereon by heating the underlayer, followed by supplying a disilane or higher order silane-based gas onto the surface of the heated underlayer.

Abstract translation: 提供一种在底层上形成作为薄膜种子的种子层的方法，其包括：通过加热底层在底层的表面上形成第一种子层，然后将氨基硅烷基气体供应到表面上 的加热底层; 通过加热底层，在其上形成有第一籽晶层的底层表面上形成第二晶种层，然后在加热的底层表面上提供乙硅烷或更高级的硅烷基气体。

公开(公告)号：US20240309508A1

公开(公告)日：2024-09-19

申请号：US18600373

申请日：2024-03-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki NAGATA

IPC: C23C16/455

CPC classification number: C23C16/45578

Abstract: A substrate processing apparatus includes: a first reaction tube of a vertical shape; and a gas injector configured to supply a gas to an interior of the first reaction tube, wherein the gas injector has a first tubular portion extending horizontally to pass through a sidewall of the first reaction tube, the first reaction tube has a support portion protruding toward a center of the first reaction tube below the first tubular portion, and the support portion is in contact with the gas injector to support the gas injector.

公开(公告)号：US20140187025A1

公开(公告)日：2014-07-03

申请号：US14141620

申请日：2013-12-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Takahiro MIYAHARA ,  Tomoyuki NAGATA

IPC: H01L21/02 ,  C23C16/24 ,  H01L29/04

CPC classification number: H01L21/02532 ,  C23C16/0218 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/0262

Abstract: Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms.

Abstract translation: 提供一种在基材上形成含有硅膜的膜的方法，包括：通过加热基底并在加热的基底的表面上供给氨基硅烷气体，在基材的表面上形成种子层; 以及通过加热所述基底并将不含氨基的硅烷类气体供给到所述加热基材的表面的种子层上而在所述种子层上形成所述硅膜，其中，用于形成种子的氨基硅烷系气体分子 层包含两个或更多个硅原子。

公开(公告)号：US20240332047A1

公开(公告)日：2024-10-03

申请号：US18610344

申请日：2024-03-20

Applicant: Tokyo Electron Limited

Inventor： Yoshitaka MIURA ,  Tomoyuki NAGATA

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67253

Abstract: A substrate processing apparatus includes: a process container accommodating a substrate holder that holds a plurality of substrates and including an opening at a lower end of the process container; a lid configured to open and close the opening; and a thermal insulator installed on the lid and configured to thermally insulate a first space below the substrate holder. The thermal insulator includes a partition member that forms a second space partitioned from the first space. The lid includes a supply port for supplying a temperature regulation fluid to the second space and an exhaust port for discharging the temperature regulation fluid from the second space.

公开(公告)号：US20240332043A1

公开(公告)日：2024-10-03

申请号：US18616594

申请日：2024-03-26

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki NAGATA ,  Yoshitaka MIURA

IPC: H01L21/67

CPC classification number: H01L21/67109

Abstract: A substrate processing apparatus includes a vacuum container configured to accommodate a substrate holder configured to hold a plurality of substrates and having an opening provided in a lower end of the vacuum container, a lid configured to open/close the opening, and a heat-insulating unit configured to insulate a first space below the substrate holder, wherein the heat-insulating unit includes a partition member that forms a second space partitioned from the first space, and the partition member is provided to be rotatable with respect to the lid.

公开(公告)号：US20170140964A1

公开(公告)日：2017-05-18

申请号：US15352816

申请日：2016-11-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki NAGATA ,  Tomoya HASEGAWA

IPC: H01L21/673 ,  H01L21/67

CPC classification number: H01L21/67303 ,  H01L21/67757 ,  H01L21/67769 ,  H01L21/67775 ,  H01L21/67781

Abstract: There is provided a wafer boat support table that supports a wafer boat having a plurality of posts from below, the plurality of posts being configured to arrange and support a plurality of wafers at intervals in a vertical direction, the wafer boat support table including: a plurality of support points installed on each of linear lines defined by connecting a center of the wafer boat and the plurality of posts and configured to support a bottom surface of the wafer boat while being brought into contact with the bottom surface of the wafer boat.

公开(公告)号：US20130328306A1

公开(公告)日：2013-12-12

申请号：US13911809

申请日：2013-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Izumi SATO ,  Shusuke KONNO ,  Tomoyuki NAGATA

IPC: F16L49/06

CPC classification number: F16L49/06 ,  F16L19/005 ,  F16L19/065

Abstract: A joint member that includes a cylindrical sleeve member having a first outer diameter portion having a first outer diameter and a second outer diameter portion having a second outer diameter smaller than the first outer diameter. The joint member further includes a cylindrical nut member having an inner peripheral surface on which a first thread is formed and a bottom in which an opening is formed. The joint member further includes a limit member fixed to an outer periphery portion of the second outer diameter portion inserted into the opening and in contact with an outer surface of the bottom of the cylindrical nut member.

Abstract translation: 一种接头构件，其包括具有第一外径部分的圆柱形套筒构件和具有小于第一外径的第二外径的第二外径部分。 接头构件还包括圆筒形螺母构件，其具有形成有第一螺纹的内周面和形成有开口的底部。 接头构件还包括固定到插入到开口中并与圆柱形螺母构件的底部的外表面接触的第二外径部分的外周部分的限制构件。