公开(公告)号：US20190271074A1

公开(公告)日：2019-09-05

申请号：US16291243

申请日：2019-03-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kyungseok KO ,  Hiromi SHIMA ,  Eiji KIKAMA ,  Keisuke SUZUKI

IPC: C23C16/34 ,  C23C16/455 ,  H01L21/02

Abstract: There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs.

公开(公告)号：US20190131126A1

公开(公告)日：2019-05-02

申请号：US16173214

申请日：2018-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kyungseok KO ,  Hiromi SHIMA ,  Eiji KIKAMA ,  Keisuke SUZUKI ,  Shingo HISHIYA

IPC: H01L21/02 ,  H01L23/532 ,  H01L21/67 ,  H01L27/11582

Abstract: There is provided a method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, including: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

公开(公告)号：US20210371983A1

公开(公告)日：2021-12-02

申请号：US17326937

申请日：2021-05-21

Applicant: Tokyo Electron Limited

Inventor： Eiji KIKAMA ,  Chiaki TAKEUCHI

IPC: C23C16/455 ,  C23C16/458

Abstract: A technique for improving uniformity in a plane of a substrate is provided. A substrate processing apparatus according an aspect of the present disclosure includes a processing container having a substantially cylindrical shape, a gas nozzle extending in a vertical direction along an inside of an inner wall of the processing container and forming a gas flow path therein, and a gas ejector provided on the processing container and communicating with the gas flow path, the gas ejector being configured to distribute a gas introduced from the gas nozzle and to eject the gas from an outer peripheral portion of the processing container.

公开(公告)号：US20210011468A1

公开(公告)日：2021-01-14

申请号：US16919992

申请日：2020-07-02

Applicant: Tokyo Electron Limited

Inventor： Nobutoshi TERASAWA ,  Noriaki KOYAMA ,  Tomonori YAMASHITA ,  Takazumi TANAKA ,  Takehiro KINOSHITA ,  Fumiaki NAGAI ,  Eiji KIKAMA

IPC: G05B23/02 ,  G05B19/418 ,  H01L21/67 ,  G06F17/18

Abstract: A substrate processing system includes: an acquiring unit configured to acquire process data of each step when each step included in a predetermined process is executed under different control conditions; an extracting unit configured to divide each step into a first section in which the process data fluctuates and a second section in which the process data is converged, and extract first data belonging to the first section and second data belonging to the second section from the process data; and a monitoring unit configured to monitor the process data by comparing one or both of an evaluation value that evaluates the first data and an evaluation value that evaluates the second data with corresponding upper and lower limit values.

公开(公告)号：US20220270940A1

公开(公告)日：2022-08-25

申请号：US17675225

申请日：2022-02-18

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Nobutoshi TERASAWA ,  Fumiaki NAGAI ,  Kazuaki SASAKI ,  Hiroaki KIKUCHI ,  Masayuki KITAMURA ,  Kazuo YABE ,  Motoshi FUKUDOME ,  Tatsuya MIYAHARA ,  Eiji KIKAMA ,  Yuki TANABE ,  Tomoyuki NAGATA

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

公开(公告)号：US20190080913A1

公开(公告)日：2019-03-14

申请号：US16126195

申请日：2018-09-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kyungseok KO ,  Hiromi SHIMA ,  Eiji KIKAMA ,  Shingo HISHIYA

IPC: H01L21/28 ,  H01L21/02 ,  H01L27/11582 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56

Abstract: There is provided a method of forming a silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed. The method comprises placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed, in a processing container under a depressurized atmosphere; forming a spacer silicon nitride film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer silicon nitride film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.