Film-Forming Method and Film-Forming Apparatus

    公开(公告)号:US20190271074A1

    公开(公告)日:2019-09-05

    申请号:US16291243

    申请日:2019-03-04

    Abstract: There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs.

    METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM

    公开(公告)号:US20190131126A1

    公开(公告)日:2019-05-02

    申请号:US16173214

    申请日:2018-10-29

    Abstract: There is provided a method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, including: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20210371983A1

    公开(公告)日:2021-12-02

    申请号:US17326937

    申请日:2021-05-21

    Abstract: A technique for improving uniformity in a plane of a substrate is provided. A substrate processing apparatus according an aspect of the present disclosure includes a processing container having a substantially cylindrical shape, a gas nozzle extending in a vertical direction along an inside of an inner wall of the processing container and forming a gas flow path therein, and a gas ejector provided on the processing container and communicating with the gas flow path, the gas ejector being configured to distribute a gas introduced from the gas nozzle and to eject the gas from an outer peripheral portion of the processing container.

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