公开(公告)号：US20150318170A1

公开(公告)日：2015-11-05

申请号：US14698273

申请日：2015-04-28

Applicant: TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

Inventor： Kazuo YABE ,  Akira SHIMIZU ,  Koichi IZUMI ,  Masahiro FURUTANI

IPC: H01L21/02

CPC classification number: H01L21/67017 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02219 ,  H01L21/02236 ,  H01L21/0228

Abstract: A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.

Abstract translation: 通过在真空气氛中层叠基板的表面上的氧化物的分子层来获得薄膜的成膜方法包括进行多次循环。 该循环包括：在真空容器中将含有源的源气体供应到衬底以将源吸附到衬底上; 形成含有浓度不低于在真空容器中引起链分解反应的臭氧的臭氧的臭氧气氛; 通过向臭氧气氛供给能量而强制分解臭氧，生成活性物质的氧，并且通过活性种氧化吸附在基材表面上的源，得到氧化物。

公开(公告)号：US20180033618A1

公开(公告)日：2018-02-01

申请号：US15660563

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Kazuo YABE

IPC: H01L21/02 ,  H01J37/32 ,  H01J37/20 ,  H01L21/311

CPC classification number: H01L21/02315 ,  C23C16/345 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/20 ,  H01J37/32009 ,  H01J37/32532 ,  H01J2237/038 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116

Abstract: A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.

公开(公告)号：US20230162977A1

公开(公告)日：2023-05-25

申请号：US17910979

申请日：2021-03-05

Applicant: Tokyo Electron Limited

Inventor： Hiroki MURAKAMI ,  Kazuo YABE

IPC: H01L21/02 ,  C23C16/04

CPC classification number: H01L21/0262 ,  C23C16/045 ,  H01L21/02381 ,  H01L21/02403

Abstract: Provided are a substrate processing method and a substrate processing apparatus, wherein a silicon oxide film is favorably embedded. The substrate processing method includes forming a silicon oxide film by repeating a cycle a plurality of times, the cycle including: forming an adsorption layer by supplying a silicon-containing gas to a substrate having a depression formed therein and causing the silicon-containing gas to be adsorbed on the substrate; etching at least a portion of the adsorption layer by supplying a shape control gas to the substrate; and supplying an oxygen-containing gas to the substrate and causing the oxygen-containing gas to react with the adsorption layer, wherein the temperature of the substrate is 400° C. or lower.

公开(公告)号：US20220270940A1

公开(公告)日：2022-08-25

申请号：US17675225

申请日：2022-02-18

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Nobutoshi TERASAWA ,  Fumiaki NAGAI ,  Kazuaki SASAKI ,  Hiroaki KIKUCHI ,  Masayuki KITAMURA ,  Kazuo YABE ,  Motoshi FUKUDOME ,  Tatsuya MIYAHARA ,  Eiji KIKAMA ,  Yuki TANABE ,  Tomoyuki NAGATA

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

公开(公告)号：US20180090311A1

公开(公告)日：2018-03-29

申请号：US15713109

申请日：2017-09-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro MIYAHARA ,  Kazuo YABE ,  Shigeru NAKAJIMA

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/033

CPC classification number: H01L21/02164 ,  H01L21/02112 ,  H01L21/02271 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/32139

Abstract: There is provided a boron film forming method which includes forming a boron film on a target substrate by CVD by supplying a boron-containing gas as a film-forming source gas to the target substrate while heating the target substrate to a predetermined temperature, the boron film being made of boron and inevitable impurities and used for a semiconductor device.

公开(公告)号：US20220013333A1

公开(公告)日：2022-01-13

申请号：US17305389

申请日：2021-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keiji TABUKI ,  Yamato TONEGAWA ,  Kazumasa IGARASHI ,  Kazuo YABE

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a processing container having a vertical tubular shape and an opening formed in a side wall of the processing container, the processing container configured to accommodate a plurality of substrates in multiple stages; a plasma partition wall airtightly provided on an outer wall of the processing container and configured to cover the opening and define a plasma generation space; a plasma electrode provided along the plasma partition wall; and a processing gas supplier provided outside the plasma generation space and configured to supply a plasma generation gas.

公开(公告)号：US20150354060A1

公开(公告)日：2015-12-10

申请号：US14725640

申请日：2015-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Akira SHIMIZU

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/30 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/45534

Abstract: A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.

Abstract translation: 通过在真空室内形成的真空气氛中堆叠基板表面上的氧化物分子层来形成薄膜的成膜装置包括：源气体供给单元，将含有源的源气体供给到基板; 气氛气体供给单元，向真空室供给气氛气体; 能量供应单元向臭氧气氛供应能量; 控制单元，被配置为输出用于重复执行包括源气体的供应，气氛气体的供给和能量供给多次的循环的控制信号; 连接到真空室的缓冲区，向缓冲区供给惰性气体; 以及分隔单元，相对于真空室分隔缓冲区域，并使缓冲区域与真空室连通。

公开(公告)号：US20140004713A1

公开(公告)日：2014-01-02

申请号：US13930667

申请日：2013-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masanobu IGETA ,  Jun SATO ,  Kazuo YABE ,  Hitoshi KATO ,  Yusaku IZAWA

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/303 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/0337 ,  H01L21/31144 ,  H01L29/66795 ,  H01L29/7843

Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.

Abstract translation: 根据本公开的实施例，提供了一种成膜方法。 成膜方法包括：在旋转转盘并旋转基板的同时，将作为源极气体的第一处理气体作为源极气体供给，并且供给第二处理气体作为用于氮化吸附于基板的第一处理气体的气体 在从第一处理气体被供给到基板的位置沿着转盘的圆周方向间隔开的位置到基板。 此外，成膜方法包括在第一处理气体供给位置和第二处理气体供给位置之间沿着转台的圆周方向设置分离区域，并且在形成在基板上的反应产物的分子层上照射紫外线 在转盘上控制在薄膜中产生的应力。

公开(公告)号：US20200299839A1

公开(公告)日：2020-09-24

申请号：US16819484

申请日：2020-03-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Kazumasa IGARASHI ,  Yamato TONEGAWA

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/30 ,  C23C16/36

Abstract: A processing apparatus includes a processing container accommodating a substrate therein, a plasma generator having a plasma generation space communicating with an inside of the processing container, a first gas supply provided in the plasma generation space and configured to supply a hydrogen gas, and a second gas supply provided in the processing container and configured to supply a hydrogen gas.

公开(公告)号：US20160148801A1

公开(公告)日：2016-05-26

申请号：US14940843

申请日：2015-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Akira SHIMIZU ,  Kazuhide HASEBE

IPC: H01L21/02 ,  C23C16/455

Abstract: A substrate processing apparatus, that performs oxidization on a surface of a substrate in a vacuum atmosphere formed in a vacuum chamber, includes an atmosphere gas supply part configured to supply an atmosphere gas into the vacuum chamber to form a processing atmosphere containing ozone and hydrogen donor, wherein a concentration of the ozone is above a threshold concentration to trigger chain reaction of decomposition. The substrate processing apparatus further includes an energy supply part configured to supply an energy to the processing atmosphere to oxidize a surface of a substrate with reactive species generated by forcibly decomposing the ozone and hydroxyl radical generated by reaction of the hydrogen donor.

Abstract translation: 在真空室中形成的真空气氛中在基板的表面上进行氧化的基板处理装置包括：气氛气体供给部，被配置为向真空室供给气氛气体，形成含有臭氧和氢供体的处理气氛 其中臭氧的浓度高于阈值浓度以引发分解的链式反应。 基板处理装置还包括能量供给部，该能量供给部被配置为向处理气氛供给能量，以通过强制分解由氢供体产生的臭氧和羟基自由基产生的反应性物质来氧化基板的表面。