公开(公告)号：US20220307128A1

公开(公告)日：2022-09-29

申请号：US17654139

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Akari MATSUNAGA ,  Yutaka MOTOYAMA ,  Satoshi TAKAGI

IPC: C23C16/24 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

公开(公告)号：US20200161130A1

公开(公告)日：2020-05-21

申请号：US16685627

申请日：2019-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Atsushi ENDO

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/06

Abstract: There is provided a method of forming a polysilicon film, which includes: forming an amorphous silicon film on a substrate; forming a cap layer, which is formed of an amorphous germanium film or an amorphous silicon germanium film, on the amorphous silicon film; forming crystal nuclei of a silicon in the amorphous silicon film by heating the substrate at a first temperature; removing the cap layer after the crystal nuclei are formed; and growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

公开(公告)号：US20150376789A1

公开(公告)日：2015-12-31

申请号：US14845673

申请日：2015-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Kohei FUKUSHIMA ,  Masanobu MATSUNAGA ,  Keiji TABUKI ,  Yamato TONEGAWA

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/458

CPC classification number: C23C16/45587 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4581 ,  C23C16/4583 ,  C23C16/46 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: A vertical heat treatment apparatus includes: a gas supply part that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members arranged above and below a region in which target substrates are disposed. The gas distribution adjusting members include a first plate-shaped member with convex and concave portions and a second plate-shaped member with convex and concave portions, the first plate-shaped member and the second plate-shaped member being arranged above and below each other, and the first plate-shaped member and the second plate-shaped member being arranged above a bottom plate of a substrate holding and supporting part and below a ceiling plate of a substrate holding and supporting part. The first plate-shaped member has a first surface area and the second plate-shaped member has a second surface area different from the first surface area.

Abstract translation: 一种立式热处理装置包括：将成膜气体供给到反应室内的气体供给部; 以及气体分配调节构件，其布置在目标基板的区域的上方和下方。 气体分配调节构件包括具有凸凹部的第一板状构件和具有凸部和凹部的第二板状构件，第一板状构件和第二板状构件彼此上下配置 并且第一板状构件和第二板状构件布置在基板保持支撑部的底板的上方和基板保持支撑部的顶板的下方。 第一板状构件具有第一表面区域，第二板状构件具有与第一表面区域不同的第二表面区域。

公开(公告)号：US20220148893A1

公开(公告)日：2022-05-12

申请号：US17450327

申请日：2021-10-08

Applicant: Tokyo Electron Limited

Inventor： Yutaka MOTOYAMA ,  Yoshihiro TAKEZAWA

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677

Abstract: A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.

公开(公告)号：US20190144994A1

公开(公告)日：2019-05-16

申请号：US16186921

申请日：2018-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Yutaka MOTOYAMA

IPC: C23C16/44

Abstract: There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

公开(公告)号：US20160024654A1

公开(公告)日：2016-01-28

申请号：US14809837

申请日：2015-07-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei FUKUSHIMA ,  Yutaka MOTOYAMA ,  Pao-Hwa CHOU

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4583 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45544

Abstract: A film forming apparatus includes a first and second source gas suppliers configured to limitedly supply a source gas only to a first and second substrate areas, respectively, a reaction gas supplier configured to supply a reaction gas to the first substrate area and the second substrate area, a purge gas supplier configured to supply a purge gas for preventing the source gas supplied to one of the first and second substrate areas from being supplied to the other substrate area, a division-purpose substrate held between the first and second substrate areas in a substrate holding part, and a control part configured to output a control signal such that a first cycle including supplying the source gas and the reaction gas to the first substrate area and a second cycle including supplying the source gas and the reaction gas to the second substrate area are each performed plural times.

Abstract translation: 一种成膜设备包括：第一和第二源气体供应器，其分别被配置为仅将源气体仅分别供应到第一和第二基底区域;反应气体供应器，被配置为将反应气体供应到第一基底区域和第二基底区域 提供一种净化气体供给器，被配置为提供用于防止供应到第一和第二基板区域中的一个的源气体的吹扫气体被供应到另一个基板区域，分隔用基板被保持在第一和第二基板区域之间 基板保持部，以及控制部，其配置为输出控制信号，使得包括将源气体和反应气体供应到第一基板区域的第一循环和包括将源气体和反应气体供应到第二基板的第二循环 区域分别进行多次。

公开(公告)号：US20150259799A1

公开(公告)日：2015-09-17

申请号：US14642230

申请日：2015-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Kohei FUKUSHIMA ,  Masanobu MATSUNAGA ,  Pao-Hwa CHOU

IPC: C23C16/46 ,  C23C16/458 ,  H01L21/02 ,  C23C16/455

CPC classification number: C23C16/46 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: A vertical heat treatment apparatus for performing a film forming treatment on a plurality of target substrates having a surface with convex and concave portions includes: a gas supply unit that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members made of quartz and installed to be positioned respectively above and below a region in which the plurality of target substrates held and supported by a substrate holding and supporting unit are disposed, wherein if S is a surface area per unit region of the gas distribution adjusting members and S0 is a surface area per unit region obtained by dividing a surface area of the target substrate by a surface area calculated based on an external dimension of the target substrate, a value obtained by dividing S by S0 (S/S0) is set to be 0.8 or more.

Abstract translation: 在具有凸凹部的表面的多个目标基板上进行成膜处理的立式热处理装置包括：将成膜气体供给到反应室内的气体供给部， 和由石英制成的气体分配调节构件，并且被设置为分别位于由基板保持和支撑单元保持和支撑的多个目标基板的上方和下方，其中如果S是每单位区域的表面积 气体分布调整部件S0是通过将目标基板的表面积除以基于目标基板的外部尺寸计算出的面积而得到的每单位区域的表面积，将S除以S0（S / S0）设定为0.8以上。

公开(公告)号：US20220189785A1

公开(公告)日：2022-06-16

申请号：US17456609

申请日：2021-11-26

Applicant: Tokyo Electron Limited

Inventor： Yutaka MOTOYAMA ,  Hiroaki IKEGAWA ,  Satoshi TAKAGI ,  Daisuke SUZUKI

IPC: H01L21/3205 ,  H01L21/311 ,  C23C16/24

Abstract: A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate.

公开(公告)号：US20200294800A1

公开(公告)日：2020-09-17

申请号：US16815682

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Hiroyuki HAYASHI

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.

公开(公告)号：US20150275368A1

公开(公告)日：2015-10-01

申请号：US14666874

申请日：2015-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Kohei FUKUSHIMA ,  Masanobu MATSUNAGA ,  Yamato TONEGAWA ,  Keisuke SUZUKI

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44

CPC classification number: C23C16/45563 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/458

Abstract: A film forming apparatus includes: first and second source gas nozzles installed so as to extend in an arrangement direction of the substrates, each of the source gas nozzles including a plurality of gas ejection holes formed to eject the source gas toward central regions of the substrates at height positions corresponding to gaps between the substrates; a reaction gas supply unit configured to supply the reaction gas into the reaction vessel; first and second source gas supply lines respectively connected to the first and second source gas nozzles; first and second tanks respectively installed on the first and source gas supply lines, and configured to accumulate the source gas in a pressurized state; valves respectively installed at upstream and downstream sides of the first tank and at upstream and downstream sides of the second tank; and an exhaust port configured to evacuate the interior of the reaction vessel.

Abstract translation: 一种成膜装置包括：第一和第二源气体喷嘴，其沿着基板的排列方向安装，每个源气体喷嘴包括多个气体喷射孔，其形成为朝向基板的中心区域喷射源气体 在对应于基板之间的间隙的高度位置处; 反应气体供给部，其将反应气体供给到反应容器内; 分别连接到第一和第二源气体喷嘴的第一和第二源气体供应管线; 第一和第二储罐分别安装在第一和源气体供应管线上，并被配置为将源气体积聚在加压状态; 分别安装在第一罐的上游侧和下游侧以及第二罐的上游侧和下游侧的阀; 以及构造成抽空反应容器内部的排气口。