公开(公告)号：US11851752B2

公开(公告)日：2023-12-26

申请号：US17654139

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Akari Matsunaga ,  Yutaka Motoyama ,  Satoshi Takagi

IPC: C23C16/24 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/24 ,  C23C16/45563 ,  C23C16/52 ,  H01L21/02532

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

公开(公告)号：USD785576S1

公开(公告)日：2017-05-02

申请号：US29524898

申请日：2015-04-24

Applicant: Tokyo Electron Limited

Designer： Yutaka Motoyama ,  Kohei Fukushima

公开(公告)号：US11587787B2

公开(公告)日：2023-02-21

申请号：US17132656

申请日：2020-12-23

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Yutaka Motoyama

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/306

Abstract: A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

公开(公告)号：US20200248305A1

公开(公告)日：2020-08-06

申请号：US16775439

申请日：2020-01-29

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Rui Kanemura

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/455

Abstract: An exhaust device includes: a first pressure regulator provided in an exhaust pipe connected to a processing container; a second pressure regulator provided on a downstream side of the first pressure regulator; a first vacuum gauge provided on an upstream side of the first pressure regulator; and a second vacuum gauge provided between the first pressure regulator and the second pressure regulator.

公开(公告)号：USD786810S1

公开(公告)日：2017-05-16

申请号：US29524912

申请日：2015-04-24

Applicant: Tokyo Electron Limited

Designer： Yutaka Motoyama ,  Kohei Fukushima

公开(公告)号：US12027384B2

公开(公告)日：2024-07-02

申请号：US17450327

申请日：2021-10-08

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Yoshihiro Takezawa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677

CPC classification number: H01L21/67098 ,  H01L21/02554 ,  H01L21/67757

Abstract: A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.

公开(公告)号：US20220238374A1

公开(公告)日：2022-07-28

申请号：US17648700

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Satoshi Takagi ,  Akari Matsunaga ,  Keisuke Fujita

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/24 ,  H01L21/02

Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

公开(公告)号：US09776202B2

公开(公告)日：2017-10-03

申请号：US14229493

申请日：2014-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Motoyama ,  Keisuke Suzuki ,  Kohei Fukushima ,  Shingo Hishiya

IPC: B05C5/00 ,  B05C5/02 ,  C23C16/44 ,  H01L21/67 ,  H01L21/677

CPC classification number: B05C5/02 ,  C23C16/4405 ,  C23C16/4408 ,  H01L21/67109 ,  H01L21/67757

Abstract: A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container.

公开(公告)号：US09373498B2

公开(公告)日：2016-06-21

申请号：US14228930

申请日：2014-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke Suzuki ,  Yutaka Motoyama

IPC: H05H1/24 ,  H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/67109

Abstract: A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas.

Abstract translation: 一种操作立式热处理装置的方法包括：通过供应清洁气体来清洗垂直反应室的内部; 通过多次执行包括交替地供应第一气体并供应第二气体同时从第二气体产生等离子体的循环来预涂覆反应室的内部; 通过将保持虚拟半导体衬底或导电衬底的衬底保持单元装载到反应室中并且在不供应第一气体的同时从第二气体产生等离子体的同时供给第二气体来消除电荷; 将保持多个产品半导体基板的基板保持单元装载到反应室中; 以及通过多次执行包括交替地供应所述第一气体并在从所述第二气体产生等离子体的同时供给所述第二气体的循环来在所述反应室中形成薄膜。

公开(公告)号：US12131947B2

公开(公告)日：2024-10-29

申请号：US17648700

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Satoshi Takagi ,  Akari Matsunaga ,  Keisuke Fujita

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/24 ,  H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02123

Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.