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    Plasma processing apparatus
    1.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US06503364B1

    公开(公告)日：2003-01-07

    申请号：US09651720

    申请日：2000-08-30

    申请人： Toshio Masuda ,  Tatehito Usui ,  Shigeru Shirayone ,  Kazue Takahashi ,  Mitsuru Suehiro

    发明人： Toshio Masuda ,  Tatehito Usui ,  Shigeru Shirayone ,  Kazue Takahashi ,  Mitsuru Suehiro

    IPC分类号： C23C1600

    CPC分类号： H01J37/32935 ,  H01J37/32009 ,  H01J37/32972

    摘要： In the plasma processing apparatus for generating plasma in a processing chamber and processing a wafer by mutual action of electromagnetic waves radiated from a UHF band antenna installed in the processing chamber and a magnetic field formed by a magnetic field generator installed around the processing chamber, a hollow tube having one end in communication with an opening in the side wall of the processing chamber and another end, outside the processing chamber, which has a measuring window of plasma optical emission. By setting the lines of force of the magnetic field formed by the magnetic field generator so as to form an angle relative to the hollow tube, entry of plasma into the hollow tube can be prevented, and adhesion of deposits onto the measuring window can be suppressed, whereby the transmission factor of the measuring window can be kept constant over a long period of use.

    摘要翻译： 在处理室中产生等离子体的等离子体处理装置中，通过从安装在处理室中的UHF带状天线辐射的电磁波的相互作用和由设置在处理室周围的磁场发生部形成的磁场进行相互作用来处理晶片， 中空管具有与处理室的侧壁中的开口连通的一端，以及具有等离子体光发射测量窗的处理室外的另一端。 通过设置由磁场发生器形成的磁场的力线以相对于中空管形成一个角度，可以防止等离子体进入中空管，并且可以抑制沉积物粘附到测量窗口上 由此，可以在长时间使用时测量窗口的透射系数保持恒定。

    Plasma processing system and apparatus and a sample processing method
    3.
    发明授权
    Plasma processing system and apparatus and a sample processing method 有权
    等离子体处理系统和设备及样品处理方法

    公开(公告)号：US07686917B2

    公开(公告)日：2010-03-30

    申请号：US11780014

    申请日：2007-07-19

    申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

    发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

    IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

    CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

    摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

    摘要翻译： 等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。 该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。 直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光 通过通孔。 光发射器相对于板的后表面独立地可拆卸。

    Plasma processing system and apparatus and a sample processing method
    5.
    发明授权
    Plasma processing system and apparatus and a sample processing method 有权
    等离子体处理系统和设备及样品处理方法

    公开(公告)号：US06755932B2

    公开(公告)日：2004-06-29

    申请号：US09788463

    申请日：2001-02-21

    申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

    发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

    IPC分类号： H05H100

    CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

    摘要： The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.

    摘要翻译： 本发明的目的是提供一种等离子体处理装置，其中在处理室中产生等离子体以处理样品。 所述等离子体处理装置的特征还在于，在安装在与样品相对布置的UHF天线上的板上形成多个紧密堆积的通孔，光发射器几乎与通孔背面几乎接触，并且 光传输装置设置在所述光发射机的另一端，借助于测量仪器通过光发射机和光传输装置测量来自样本和等离子体的光信息。 即使在长期放电过程中也不会对通孔发生异常放电或颗粒污染，并且在光发射机的端面处的光学性能不会劣化。 所述等离子体处理装置长时间保证对样品和等离子体表面的状态的稳定和高精度的测量。

    Plasma etching apparatus and plasma etching method
    6.
    发明授权
    Plasma etching apparatus and plasma etching method 失效
    等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US06815365B2

    公开(公告)日：2004-11-09

    申请号：US09983946

    申请日：2001-10-26

    申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    IPC分类号： H01L21302

    CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    摘要： A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

    摘要翻译： 一种用于蚀刻在具有侧壁的蚀刻室内的样品的等离子体蚀刻方法，保持在侧壁内侧的可更换夹套，以及靠近可更换护套顶端的加热机构，用于产生朝向蚀刻内部辐射的热量 房间。 等离子体蚀刻方法还包括通过抽气系统对蚀刻室进行排气的步骤，向蚀刻室供给蚀刻气体的步骤，产生用于在蚀刻室中进行蚀刻的等离子体的工序，以及工序 在产生等离子体的步骤的初始阶段期间通过加热机构进行加热操作。

    Plasma processing apparatus and plasma processing method
    7.
    发明授权
    Plasma processing apparatus and plasma processing method 失效
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US06171438B2

    公开(公告)日：2001-01-09

    申请号：US09227332

    申请日：1999-01-08

    申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    IPC分类号： C23C1600

    CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    摘要： A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.

    摘要翻译： 一种等离子体蚀刻装置，包括真空处理室，等离子体产生装置，用于向处理室供应处理气体的处理气体供应源，用于保持真空处理室中待处理样品的电极和用于减少处理气体的排气系统 真空处理室的压力。 处理气体包括至少一种具有通过等离子体放电形成聚合膜的组成的气体，其中处理气体通过在处理室中的等离子体放电而制成。 与处理室中的等离子体接触的处理室的内壁表面的至少一个表面和内部部件的表面被控制到比待处理样品的温度低的预定温度，并且强 聚合膜形成在处理室的内壁表面上。

    Plasma etching apparatus and plasma etching method
    8.
    发明申请
    Plasma etching apparatus and plasma etching method 审中-公开
    等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US20050236109A1

    公开(公告)日：2005-10-27

    申请号：US11156477

    申请日：2005-06-21

    申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

    IPC分类号： C23F1/00 ,  H01J37/32

    CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022

    摘要： A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.

    摘要翻译： 等离子体处理装置包括真空处理室，具有第一电源的等离子体产生单元，气体供给单元，具有用于将样品保持在真空处理室中的样品台表面的下部电极和真空泵送单元。 该设备还包括设置在与样品台表面相对的位置处的板，与板接触设置的盘导电体，用于向盘导电体施加RF频率偏置功率的第二电源，以及用于控制 板的温度达到预定值。 该板由高纯度的硅或碳制成，盘导电体和板具有多个孔，用于将来自气体供应单元的处理气体引入真空处理室。