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1.发明公开公开(公告)号：US20240087785A1
公开(公告)日：2024-03-14
申请号：US17944516
申请日：2022-09-14
Applicant: Western Digital Technologies, Inc.
Inventor： Susumu OKAMURA , James Mac FREITAG , Yuankai ZHENG , Brian R. YORK
CPC classification number: H01F10/3272 , G01R33/093 , G01R33/098 , H01L27/222 , H01L43/10 , G11B5/3906
Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases stability to magnetic fields, and in turn, results in lower magnetic noise of the device. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure with (001) texture, meaning that the (001) plane is parallel to the surface of MR device substrate. The first ferromagnetic (FM1) layer and a part of the second ferromagnetic (FM2) layer also have the (001) texture. An amorphous layer in a second ferromagnetic (FM2) layer can reset the growth texture of the MR device to a (111) texture in order to promote the growth of an antiferromagnetic (AF) pinning layer.
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公开(公告)号：US20210055361A1
公开(公告)日：2021-02-25
申请号：US16730746
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-jung CHIEN , Yung-Hung WANG , Ming MAO , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.
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公开(公告)号：US20220005500A1
公开(公告)日：2022-01-06
申请号：US17448166
申请日：2021-09-20
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Ming MAO , Daniele MAURI , Chih-Ching HU , Chen-Jung CHIEN
Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.
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公开(公告)号：US20210201943A1
公开(公告)日：2021-07-01
申请号：US16879601
申请日：2020-05-20
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Ming MAO , Daniele MAURI , Chih-Ching HU , Chen-Jung CHIEN
Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.
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公开(公告)号：US20210063505A1
公开(公告)日：2021-03-04
申请号：US16729080
申请日：2019-12-27
Applicant: Western Digital Technologies, Inc.
Inventor： Daniele MAURI , Yuankai ZHENG , Lei WANG , Christian KAISER
Abstract: A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinning layer, an anti-parallel coupled layer over the pinned layer, a reference layer over the anti-parallel coupled layer, a barrier layer over the reference layer, a free layer over the barrier layer, and a second antiferromagnetic pinning layer over the free layer. The first anneal of the MTJ sets the first AFM pinning layer, the pinned layer, the free layer, and the second AFM pinning layer in a first magnetization direction. The second anneal of the MTJ resets the free layer and the second AFM pinning layer in a second magnetization direction. An operating field range of the TMR based magnetic sensor is over ±100 Oe.
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Patent Agency Ranking
公开(公告)号：US20210055360A1
公开(公告)日：2021-02-25
申请号：US16728507
申请日：2019-12-27
Applicant: Western Digital Technologies, Inc.
Inventor： Daniele MAURI , Lei WANG , Yuankai ZHENG , Christian KAISER , Chih-Ching HU , Ming MAO , Ming JIANG , Petrus Antonius VAN DER HEIJDEN
Abstract: Embodiments of the present disclosure generally relate to a sensor of magnetic tunnel junctions (MTJs) with shape anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one magnetic tunnel junctions (MTJ). The MTJ includes a free layer having a first edge and a second edge. The free layer has a thickness of about 100 Å or more. The free layer has a width and a height with a width-to-height aspect ratio of about 4:1 or more. The MTJ has a first hard bias element positioned proximate the first edge of the free layer and a second hard bias element positioned proximate the second edge of the free layer.
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公开(公告)号：US20240194221A1
公开(公告)日：2024-06-13
申请号：US18227537
申请日：2023-07-28
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Susumu OKAMURA , Brian R. YORK , Zhitao DIAO , James Mac FREITAG
CPC classification number: G11B5/3146 , G11B5/314 , G11B5/3929
Abstract: Embodiments of the present disclosure generally relate to a read sensor utilized in a read head. The read sensor comprises an amorphous break layer disposed on a shield, a seed layer disposed on the amorphous break layer, a first ferromagnetic layer disposed on the seed layer, a barrier layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the barrier layer. The amorphous break layer comprises CoFeBTa, the seed layer comprises RuAl, and the barrier layer comprises a semiconductor material, such as ZnSe, ZnTe, ZnO, CuSe, or CuInGaSe. The semiconductor barrier layer reduces the resistance-area product of the read sensor. The amorphous break layer breaks the texture between the shield, which has a FCC texture, and the seed layer, which has a BCC texture. The BCC texture of the seed layer is then inherited by the remaining layers disposed over the seed layer.
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公开(公告)号：US20210063507A1
公开(公告)日：2021-03-04
申请号：US16730730
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-jung CHIEN , Yung-Hung WANG , Dujiang WAN , Ronghui ZHOU , Ming MAO , Ming JIANG , Daniele MAURI
Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.
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公开(公告)号：US20210063504A1
公开(公告)日：2021-03-04
申请号：US16718667
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-Jung CHIEN , Yung-Hung WANG , Dujiang WAN , Ronghui ZHOU , Ming MAO , Ming JIANG , Daniele MAURI
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.
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公开(公告)号：US20210063502A1
公开(公告)日：2021-03-04
申请号：US16718346
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching HU , Yung-Hung WANG , Ann Lorraine CARVAJAL , Ming MAO , Chen-Jung CHIEN , Yuankai ZHENG , Ronghui ZHOU , Dujiang WAN , Carlos CORONA , Daniele MAURI , Ming JIANG
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
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