公开(公告)号：US20240005973A1

公开(公告)日：2024-01-04

申请号：US17854785

申请日：2022-06-30

申请人： Western Digital Technologies, Inc.

发明人： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Susumu OKAMURA ,  Kuok San HO ,  Hisashi TAKANO ,  Randy G. SIMMONS

IPC分类号： G11C11/16 ,  H01L43/10 ,  G11B5/39 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/22

CPC分类号： G11C11/161 ,  H01L43/10 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/222

摘要： The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.

公开(公告)号：US20240005951A1

公开(公告)日：2024-01-04

申请号：US17854617

申请日：2022-06-30

申请人： Western Digital Technologies, Inc.

发明人： Ning SHI ,  Brian R. YORK ,  Susumu OKAMURA ,  Suping SONG

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  G11B5/3912

摘要： Aspects of the present disclosure generally relate to magnetic recording heads (such as write heads of data storage devices) that include multilayer structures to facilitate targeted switching and relatively low coercivity. In one or more embodiments, a magnetic recording head includes an iron-cobalt (FeCo) layer having a crystalline structure that is a cubic lattice structure, a first crystalline layer formed of a first material, and a second crystalline layer between the first crystalline layer and the FeCo layer. The second crystalline layer is formed of a second material different from the first material, and the second crystalline layer interfaces both the FeCo layer and the first crystalline layer. The crystalline structure of the FeCo layer has a texture of .

公开(公告)号：US20210390977A1

公开(公告)日：2021-12-16

申请号：US17463358

申请日：2021-08-31

申请人： Western Digital Technologies, Inc.

发明人： James Mac FREITAG ,  Zheng GAO ,  Susumu OKAMURA ,  Brian R. YORK

IPC分类号： G11B5/147 ,  G11B11/105 ,  G11B5/31

摘要： Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

公开(公告)号：US20240087785A1

公开(公告)日：2024-03-14

申请号：US17944516

申请日：2022-09-14

申请人： Western Digital Technologies, Inc.

发明人： Susumu OKAMURA ,  James Mac FREITAG ,  Yuankai ZHENG ,  Brian R. YORK

IPC分类号： H01F10/32 ,  G01R33/09 ,  H01L27/22 ,  H01L43/10

CPC分类号： H01F10/3272 ,  G01R33/093 ,  G01R33/098 ,  H01L27/222 ,  H01L43/10 ,  G11B5/3906

摘要： The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases stability to magnetic fields, and in turn, results in lower magnetic noise of the device. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure with (001) texture, meaning that the (001) plane is parallel to the surface of MR device substrate. The first ferromagnetic (FM1) layer and a part of the second ferromagnetic (FM2) layer also have the (001) texture. An amorphous layer in a second ferromagnetic (FM2) layer can reset the growth texture of the MR device to a (111) texture in order to promote the growth of an antiferromagnetic (AF) pinning layer.

公开(公告)号：US20240032437A1

公开(公告)日：2024-01-25

申请号：US18197495

申请日：2023-05-15

申请人： Western Digital Technologies, Inc.

发明人： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Susumu OKAMURA ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Randy G. SIMMONS ,  Kuok San HO ,  Hisashi TAKANO

IPC分类号： H10N50/10 ,  H10N50/85 ,  G11C11/16 ,  H10B61/00 ,  G01R33/09 ,  G11B5/39

CPC分类号： H10N50/10 ,  H10N50/85 ,  G11C11/161 ,  H10B61/00 ,  G01R33/093 ,  G11B5/3909

摘要： The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X2YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.

公开(公告)号：US20230047223A1

公开(公告)日：2023-02-16

申请号：US17401856

申请日：2021-08-13

申请人： Western Digital Technologies, Inc.

发明人： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Susumu OKAMURA ,  Michael GRIBELYUK ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO

IPC分类号： H01F10/32 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11B5/39

摘要： The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.

公开(公告)号：US20230410841A1

公开(公告)日：2023-12-21

申请号：US17845797

申请日：2022-06-21

申请人： Western Digital Technologies, Inc.

发明人： James Mac FREITAG ,  Susumu OKAMURA ,  Christian KAISER

IPC分类号： G11B5/31

CPC分类号： G11B5/3116 ,  G11B5/314

摘要： The present disclosure generally relates to a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield of the magnetic recording head. The spintronic device comprises a multilayer spacer layer comprising a Cu layer in contact with a spin torque layer and a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn. A multilayer notch comprising a CoFe layer is disposed over the spin transparent texture layer of the multilayer spacer layer and a Heusler alloy layer is disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe. The multilayer spacer layer and the multilayer notch result in the spintronic device having a high spin polarization and a reduced critical current.

公开(公告)号：US20230410840A1

公开(公告)日：2023-12-21

申请号：US17845809

申请日：2022-06-21

申请人： Western Digital Technologies, Inc.

发明人： James Mac FREITAG ,  Yongchul AHN ,  Susumu OKAMURA ,  Christian KAISER

IPC分类号： G11B5/115

CPC分类号： G11B5/115

摘要： The present disclosure generally relates to a magnetic recording device having a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield at a media facing surface. The spintronic device comprises a spin torque layer (STL) and a multilayer seed layer disposed in contact with the STL. The spintronic device may further comprise a field generation layer disposed between the trailing shield and the STL. The multilayer seed layer comprises an optional high etch rate layer, a heat dissipation layer comprising Ru disposed in contact with the optional high etch rate layer, and a cooling layer comprising Cr disposed in contact with the heat dissipation layer and the main pole. The high etch rate layer comprises Cu and has a high etch rate to improve the shape of the spintronic device during the manufacturing process.

公开(公告)号：US20230121375A1

公开(公告)日：2023-04-20

申请号：US18082721

申请日：2022-12-16

申请人： Western Digital Technologies, Inc.

发明人： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Susumu OKAMURA ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO

IPC分类号： G11B5/39 ,  H10B61/00 ,  H10N52/80 ,  H01F10/32 ,  H10N50/85 ,  H10N52/00 ,  G11C11/16 ,  G11B5/31

摘要： The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

公开(公告)号：US20220148619A1

公开(公告)日：2022-05-12

申请号：US17649246

申请日：2022-01-28

申请人： Western Digital Technologies, Inc.

发明人： James Mac FREITAG ,  Susumu OKAMURA ,  Alexander GONCHAROV ,  Zheng GAO

IPC分类号： G11B5/127 ,  G11B5/02 ,  G11B5/31 ,  G11B5/23

摘要： Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.