RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER
    1.
    发明申请
    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER 有权
    共振传感器及其制造方法,以及谐振传感器的多层结构

    公开(公告)号:US20150042208A1

    公开(公告)日:2015-02-12

    申请号:US14446602

    申请日:2014-07-30

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole over the resonator, a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole, and a third layer covering the first layer and the second layer, and the third layer sealing the gap.

    Abstract translation: 谐振换能器包括硅单晶衬底,设置在硅单晶衬底上的硅单晶谐振器,由硅构成的外壳,围绕谐振器间隙,并与硅单晶衬底一起形成腔室,令人兴奋的 模块,其被配置为激励所述谐振器;振动检测模块,被配置为检测所述谐振器的振动;第一层,设置在所述腔室上,所述第一层在所述谐振器上方具有通孔;第二层,设置在所述第一层上, 所述间隙覆盖位于所述通孔的上方且与所述通孔连通的间隙,以及覆盖所述第一层和所述第二层的第三层,所述第三层密封所述间隙。

    RESONANT SENSOR DEVICE
    2.
    发明申请

    公开(公告)号:US20200166538A1

    公开(公告)日:2020-05-28

    申请号:US16693485

    申请日:2019-11-25

    Abstract: A resonant sensor device includes a base and a detection substrate. The detection substrate includes a movable portion configured to move in a first direction, a supporter includes one or more supporting portions which extend in a direction along an intersecting plane intersecting the first direction, an intermediate fixing portion which is connected to the movable portion via the supporter, a connection portion which connects a mounting portion fixed to the base to the intermediate fixing portion in a second direction that is one direction along the intersecting plane, and a resonator at least partially embedded in the one or more supporting portions. The maximum dimension of the connection portion in a third direction orthogonal to the second direction in the intersecting plane is smaller than a maximum dimension of the supporter in the third direction.

    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER
    3.
    发明申请
    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER 有权
    共振传感器及其制造方法,以及谐振传感器的多层结构

    公开(公告)号:US20150028434A1

    公开(公告)日:2015-01-29

    申请号:US14336613

    申请日:2014-07-21

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.

    Abstract translation: 谐振换能器包括硅单晶衬底,设置在硅单晶衬底上的硅单晶谐振器,由硅构成的外壳,围绕谐振器间隙,并与硅单晶衬底一起形成腔室,令人兴奋的 模块,其被配置为激励所述谐振器;振动检测模块,被配置为检测所述谐振器的振动,设置在所述腔室上的第一层,所述第一层具有通孔,设置在所述第一层上的第二层, 第一层和第二层,以及从第二层朝向谐振器延伸的突起,突起与谐振器在空间上分离,突起与第一层隔开第一间隙,第二层与第一层分离 通过第二间隙,第一间隙与第二间隙连通。

    RESONANT TRANSDUCER AND MANUFACTURING METHOD OF RESONANT TRANSDUCER
    4.
    发明申请
    RESONANT TRANSDUCER AND MANUFACTURING METHOD OF RESONANT TRANSDUCER 有权
    谐振传感器的谐振传感器和制造方法

    公开(公告)号:US20140197712A1

    公开(公告)日:2014-07-17

    申请号:US14153325

    申请日:2014-01-13

    CPC classification number: H02N11/00 H03H3/0072 H03H9/2463 Y10T29/49007

    Abstract: A resonant transducer includes a resonator, a resonator electrodes connected to an end part of the resonator, at least one fixed electrode arranged in the vicinity of the resonator, and a buried part formed between the fixed electrode and the resonator electrode. The resonator, the resonator electrodes and the fixed electrode are formed by the same active layer on a substrate.

    Abstract translation: 谐振换能器包括谐振器,连接到谐振器的端部的谐振器电极,布置在谐振器附近的至少一个固定电极,以及形成在固定电极和谐振器电极之间的掩埋部分。 谐振器,谐振器电极和固定电极由衬底上相同的有源层形成。

Patent Agency Ranking