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    Positive photoresist composition for the formation of thick films, photoresist film and method of forming bumps using the same
    7.
    发明授权
    Positive photoresist composition for the formation of thick films, photoresist film and method of forming bumps using the same 有权
    用于形成厚膜的正性光致抗蚀剂组合物，光致抗蚀剂膜以及使用其形成凸块的方法

    公开(公告)号：US06641972B2

    公开(公告)日：2003-11-04

    申请号：US10090170

    申请日：2002-03-05

    申请人： Kouichi Misumi ,  Koji Saito ,  Toshiki Okui ,  Hiroshi Komano

    发明人： Kouichi Misumi ,  Koji Saito ,  Toshiki Okui ,  Hiroshi Komano

    IPC分类号： G03F7023

    CPC分类号： G03F7/0233 ,  G03F7/022

    摘要： A positive photoresist composition includes an alkali-soluble novolak resin (A), an alkali-soluble acrylic resin (B) and a quinonediazido-group-containing compound (C) and is used for the formation of a thick film 5 to 100 &mgr;m thick. The ingredient (B) includes 30% to 90% by weight of a unit (b1) derived from a polymerizable compound having an ether bond and 2% to 50% by weight of a unit (b2) derived from a polymerizable compound having a carboxyl group. The composition is applied on a substrate and thereby yields a photoresist film. Likewise, the composition is applied onto a substrate on an electronic part, is patterned, is plated and thereby yields bumps.

    摘要翻译： 正型光致抗蚀剂组合物包括碱溶性酚醛清漆树脂（A），碱溶性丙烯酸树脂（B）和含醌二叠氮基的化合物（C），并用于形成厚度为5至100μm厚的厚膜 。 成分（B）含有30重量％〜90重量％的衍生自具有醚键的聚合性化合物的单元（b1）和2重量％〜50重量％的来自具有羧基的聚合性化合物的单元（b2） 组。 将组合物施加在基材上，从而得到光致抗蚀剂膜。 同样地，将组合物施加到电子部件上的基板上，被图案化，被镀覆，从而产生凸块。

    Chemically amplified positive-type photoresist composition for thick film, chemically amplified dry film for thick film, and method for production of thick film resist pattern
    10.
    发明授权
    Chemically amplified positive-type photoresist composition for thick film, chemically amplified dry film for thick film, and method for production of thick film resist pattern 有权
    用于厚膜的化学放大正型光致抗蚀剂组合物，用于厚膜的化学放大干膜，以及用于生产厚膜抗蚀剂图案的方法

    公开(公告)号：US08507180B2

    公开(公告)日：2013-08-13

    申请号：US12515872

    申请日：2007-10-18

    申请人： Yasushi Washio ,  Kazuhide Uno ,  Koichi Misumi ,  Takahiro Senzaki ,  Koji Saito ,  Nobuko Ohgake

    发明人： Yasushi Washio ,  Mitsuaki Ohgake ,  Kazuhide Uno ,  Koichi Misumi ,  Takahiro Senzaki ,  Koji Saito

    IPC分类号： G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  H01L21/0271

    摘要： Disclosed are a chemically amplified positive-type photoresist composition for a thick film, a chemically amplified dry film for a thick film, and a method for producing a thick film resist pattern, all of which are capable of obtaining a satisfactory resist pattern with high sensitivity even on a substrate having a portion formed of copper on an upper surface thereof. The chemically amplified positive-type photoresist composition for a thick film comprises component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid, in which the component (A) includes an onium fluorinated alkyl fluorophosphate having a specific structure.

    摘要翻译： 公开了一种用于厚膜的化学放大正型光致抗蚀剂组合物，用于厚膜的化学放大干膜，以及制造厚膜抗蚀剂图案的方法，所有这些都能够以高灵敏度获得令人满意的抗蚀剂图案 即使在其上表面上具有由铜形成的部分的基板上。 用于厚膜的化学放大正型光致抗蚀剂组合物包含组分（A），其包含至少一种能够在用光化学射线或辐射照射时能够产生酸的化合物，和组分（B），其包含至少一种其碱 通过酸的作用，溶解度增加，其中组分（A）包括具有特定结构的鎓氟化烷基氟磷酸酯。