摘要:
A semiconductor memory device having a self-refresh operation includes a first circuit generating a first signal that specifies a first self-refresh cycle by a non-volatile circuit element provided in the semiconductor memory device, a second circuit receiving a second signal that specifies a second self-refresh cycle via a terminal that is used in common to another signal, and a third circuit generating a pulse signal having one of the first and second self-refresh cycles, the pulse signal being related to the self-refresh operation.
摘要:
There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.
摘要:
There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.
摘要:
A semiconductor memory device having a self-refresh operation includes a detection circuit generating a detection signal when detecting a change of a given input signal, and a comparator circuit comparing the detection signal with a refresh request signal internally generated and generating a control signal indicative of a circuit operation.
摘要:
A semiconductor device has a normal mode and a test mode for testing the semiconductor device, and is provided with a first circuit which receives an input signal, a test signal and an output enable signal, and outputs the input signal in response to the output enable signal, a second circuit which is coupled to the first circuit and outputs the input signal obtained from the first circuit, and power supply pads which receive a power supply voltage which is supplied in common to the first circuit and the second circuit. The first circuit fixes an output impedance of the second circuit to a high-impedance regardless of the output enable signal when the test signal indicates the test mode.
摘要:
A semiconductor storage device conducts a late-write operation. The semiconductor storage device comprises: a memory core circuit storing data; a data latch circuit storing preceding data corresponding to a preceding write-operation; an address compare circuit comparing a preceding address corresponding to the preceding write-operation and a present address corresponding to a present read-operation so as to determine whether the preceding address and the present address match each other; and a control circuit. The control circuit controls a test read-operation to read data from the memory core circuit regardless of whether the preceding address and the present address match each other.
摘要:
A semiconductor storage device conducts a late-write operation. The semiconductor storage device comprises: a memory core circuit storing data; a data latch circuit storing preceding data corresponding to a preceding write-operation; an address compare circuit comparing a preceding address corresponding to the preceding write-operation and a present address corresponding to a present read-operation so as to determine whether the preceding address and the present address match each other; and a control circuit. The control circuit controls a test read-operation to read data from the memory core circuit regardless of whether the preceding address and the present address match each other.
摘要:
A semiconductor storage device conducts a late-write operation. The semiconductor storage device comprises: a memory core circuit storing data; a data latch circuit storing preceding data corresponding to a preceding write-operation; an address compare circuit comparing a preceding address corresponding to the preceding write-operation and a present address corresponding to a present read-operation so as to determine whether the preceding address and the present address match each other; and a control circuit. The control circuit controls a test read-operation to read data from the memory core circuit regardless of whether the preceding address and the present address match each other.
摘要:
The system LSI has a MCU, a memory access control means equipped with unified memory interfaces with which at least two lines of unified memories A and B can be connected. In the main unit of the data processing system, the purpose of each unified memory is set like “mainly for main storage” or “mainly for display” by software in accordance with the operating status of the data processing system so as to adjust the memory access performance. In addition, the system has a means for specifying the unified memory to access and area therein for every display plane to be controlled by the display control circuit.
摘要:
A polarizing beam splitter for separating an upstream beam from a downstream beam according to the polarization of an incident beam is provided between first and second light sources emitting laser beams at respective wavelength and an objective lens. A phase plate for providing a phase difference to a beam incident on the polarizing beam splitter is provided between the polarizing beam splitter and the light sources. A portion of the laser beam incident on the polarizing beam splitter is reflected by the polarizing beam splitter and caused to be incident on a photo-detecting unit, so as to prevent an unnecessary portion of the laser beam is incident on the photo-detecting unit. According to the invention, the laser beam is used efficiently and the cost of fabricating an optical disk apparatus is reduced by eliminating a need for a gain controlling circuit in the photo-detecting unit.