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23 条记录 (耗时 0.028 秒)

    Projection type image display device
    1.
    发明授权
    Projection type image display device 有权
    投影型图像显示装置

    公开(公告)号：US07789516B2

    公开(公告)日：2010-09-07

    申请号：US11526583

    申请日：2006-09-26

    申请人： Young-chol Lee ,  Kun-Ho Cho ,  Jong-soo Lee ,  Jae-hyun Park

    发明人： Young-chol Lee ,  Kun-Ho Cho ,  Jong-soo Lee ,  Jae-hyun Park

    IPC分类号： G03B21/26

    CPC分类号： G03B21/28

    摘要： A thin projection type image display device with a low chin height includes a cabinet, a screen, a projection optical system, an optical path changing unit, and a reflecting unit. The screen is disposed on a front side of the cabinet. The projection optical system enlarges and projects an image formed by a display element, and the optical path changing unit is disposed on the bottom of the cabinet to reflect the image enlarged and projected by the projection optical system. The reflection unit is disposed obliquely to the screen and below the screen to reflect the image reflected by the optical path changing unit toward the screen. The projection optical system is disposed in a space above a horizontal plane perpendicular to the screen, behind the front side of the cabinet, and below an optical path of light incident on a bottom of the screen.

    摘要翻译： 具有低下巴高度的薄投影型图像显示装置包括机壳，屏幕，投影光学系统，光路改变单元和反射单元。 屏幕设置在机柜的前侧。 投影光学系统放大并投影由显示元件形成的图像，并且光路改变单元设置在机柜的底部以反射由投影光学系统放大和投影的图像。 反射单元倾斜地设置在屏幕上并且在屏幕下方，以将由光路改变单元反射的图像反射到屏幕。 投影光学系统设置在垂直于屏幕的水平面上方的空间中，位于机壳前侧后方，并位于屏幕底部的光线的下方。

    Projection type image display device
    2.
    发明申请
    Projection type image display device 有权
    投影型图像显示装置

    公开(公告)号：US20070070299A1

    公开(公告)日：2007-03-29

    申请号：US11526583

    申请日：2006-09-26

    申请人： Young-chol Lee ,  Kun-Ho Cho ,  Jong-soo Lee ,  Jae-hyun Park

    发明人： Young-chol Lee ,  Kun-Ho Cho ,  Jong-soo Lee ,  Jae-hyun Park

    IPC分类号： G03B21/28

    CPC分类号： G03B21/28

    摘要： A thin projection type image display device with a low chin height includes a cabinet, a screen, a projection optical system, an optical path changing unit, and a reflecting unit. The screen is disposed on a front side of the cabinet. The projection optical system enlarges and projects an image formed by a display element, and the optical path changing unit is disposed on the bottom of the cabinet to reflect the image enlarged and projected by the projection optical system. The reflection unit is disposed obliquely to the screen and below the screen to reflect the image reflected by the optical path changing unit toward the screen. The projection optical system is disposed in a space above a horizontal plane perpendicular to the screen, behind the front side of the cabinet, and below an optical path of light incident on a bottom of the screen.

    摘要翻译： 具有低下巴高度的薄投影型图像显示装置包括机壳，屏幕，投影光学系统，光路改变单元和反射单元。 屏幕设置在机柜的前侧。 投影光学系统放大并投影由显示元件形成的图像，并且光路改变单元设置在机柜的底部以反射由投影光学系统放大和投影的图像。 反射单元倾斜地设置在屏幕上并且在屏幕下方，以将由光路改变单元反射的图像反射到屏幕。 投影光学系统设置在垂直于屏幕的水平面上方的空间中，位于机壳前侧后方，并位于屏幕底部的光线的下方。

    Liquid crystal display device including back light having improved light concentration efficiency
    3.
    发明授权
    Liquid crystal display device including back light having improved light concentration efficiency 有权
    包括具有提高的光浓度效率的背光的液晶显示装置

    公开(公告)号：US08558966B2

    公开(公告)日：2013-10-15

    申请号：US12318161

    申请日：2008-12-22

    申请人： Byoung-Ku Kim ,  Jae-hyun Park

    发明人： Byoung-Ku Kim ,  Jae-hyun Park

    IPC分类号： G02F1/1335 ,  F21V7/04

    CPC分类号： G02B6/0056 ,  G02B6/0051 ,  G02B6/0053 ,  G02F1/133606 ,  G02F2001/133607

    摘要： A liquid crystal display device capable of preventing a split between a light guide plate and a prism sheet disposed at an upper side thereof and improving concentration efficiency, the device including a liquid crystal panel configured to represent an image, a lamp disposed below the liquid crystal panel to provide light to the liquid crystal panel, a light guide plate having the lamp disposed at least at one side thereof, and a birefringence optical sheet disposed between the liquid crystal panel and the light guide plate, and having a first prism pattern with a first refractive index, the pattern facing the liquid crystal panel, and a second prism pattern with a second refractive index higher than the first refractive index, the pattern facing the light guide plate.

    摘要翻译： 一种液晶显示装置，其能够防止导光板与设置在其上侧的棱镜片之间的分离并提高浓度效率，所述装置包括被配置为表示图像的液晶面板，设置在液晶下方的灯 面板，用于向液晶面板提供光，具有至少设置在其一侧的灯的导光板和设置在液晶面板和导光板之间的双折射光学片，并且具有第一棱镜图案，其具有 第一折射率，与液晶面板相对的图案，以及具有比第一折射率高的第二折射率的第二棱镜图案，该图案面向导光板。

    NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20070170490A1

    公开(公告)日：2007-07-26

    申请号：US11624464

    申请日：2007-01-18

    申请人： Jung-ho Moon ,  Chul-soon Kwon ,  Jae-min Yu ,  Jae-hyun Park ,  Young-cheon Jeong ,  In-gu Yoon

    发明人： Jung-ho Moon ,  Chul-soon Kwon ,  Jae-min Yu ,  Jae-hyun Park ,  Young-cheon Jeong ,  In-gu Yoon

    IPC分类号： H01L29/788 ,  H01L21/8238

    CPC分类号： H01L29/42324 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7885

    摘要： A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on hte semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be elecrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.

    摘要翻译： 非易失性存储器件包括半导体衬底; 源区域，其形成在所述半导体衬底中; 形成为与半导体衬底上的源极区域重叠的栅极绝缘膜; 形成在所述栅极绝缘膜上的浮栅，以具有在与所述源极区重叠的部分中形成均匀电场的结构; 形成为从浮置栅极的上部的浮动栅极的一个侧壁电隔离的控制栅极，插入在浮置栅极和控制栅极之间的栅极间绝缘膜，以及漏极区域 其形成为与控制栅极的另一侧相邻。

    Dust collecting structure for air-cooling electric apparatus and electric apparatus having the same
    7.
    发明授权
    Dust collecting structure for air-cooling electric apparatus and electric apparatus having the same 失效
    用于空气冷却电气设备的集尘结构和具有该集尘结构的电气设备

    公开(公告)号：US08657912B2

    公开(公告)日：2014-02-25

    申请号：US13244300

    申请日：2011-09-24

    申请人： Jae-hyun Park ,  Jeong-ho Nho

    发明人： Jae-hyun Park ,  Jeong-ho Nho

    IPC分类号： B01D45/00

    CPC分类号： B01D45/16 ,  B01D45/08

    摘要： A dust collecting structure for an air-cooling electric apparatus includes a plurality of first vortex generating members which are disposed at a predetermined interval in a case and form a plurality of suction inlets; and a plurality of second vortex generating members which are disposed in an inner direction of the case and are spaced a predetermined distance apart from the suction inlets, wherein each of the first vortex generating members projects inside the case and has a shape that allows the air, which is sucked through the suction inlets by a suction fan, to generate a vortex near a rear end of the first vortex generating member, and wherein each of the second vortex generating members has a shape that divides the air into air streams and allows the air streams to generate a vortex near a rear end of the second vortex generating member.

    摘要翻译： 一种用于空气冷却电气设备的集尘结构，包括多个第一涡流产生件，它们以预定间隔设置在壳体中并形成多个吸入口; 以及多个第二涡流产生构件，其设置在壳体的内部方向上并且与吸入口隔开预定距离，其中每个第一涡流产生构件在壳体内突出并具有允许空气的形状 ，其通过吸风机通过吸入口吸入，以在第一涡流产生构件的后端附近产生涡流，并且其中每个第二涡流产生构件具有将空气分成空气流的形状，并且允许 空气流以在第二涡流产生构件的后端附近产生涡流。

    Nonvolatile memory device and method of fabricating the same
    8.
    发明授权
    Nonvolatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US07560765B2

    公开(公告)日：2009-07-14

    申请号：US11624464

    申请日：2007-01-18

    申请人： Jung-ho Moon ,  Chul-soon Kwon ,  Jae-min Yu ,  Jae-hyun Park ,  Young-cheon Jeong ,  In-gu Yoon

    发明人： Jung-ho Moon ,  Chul-soon Kwon ,  Jae-min Yu ,  Jae-hyun Park ,  Young-cheon Jeong ,  In-gu Yoon

    IPC分类号： H01L29/788

    CPC分类号： H01L29/42324 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7885

    摘要： A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on the semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be electrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.

    摘要翻译： 非易失性存储器件包括半导体衬底; 源区域，其形成在所述半导体衬底中; 形成为与半导体衬底上的源极区域重叠的栅极绝缘膜; 形成在所述栅极绝缘膜上的浮栅，以具有在与所述源极区重叠的部分中形成均匀电场的结构; 形成为从浮置栅极的上部的浮动栅极的一个侧壁电绝缘的控制栅极，插入在浮置栅极和控制栅极之间的栅极间绝缘膜，以及漏极区域 其形成为与控制栅极的另一侧相邻。

    Magnetic memory devices and methods of forming the same
    9.
    发明授权
    Magnetic memory devices and methods of forming the same 有权
    磁记忆装置及其形成方法

    公开(公告)号：US07522447B2

    公开(公告)日：2009-04-21

    申请号：US11257841

    申请日：2005-10-25

    申请人： Won-Cheol Jeong ,  Jae-hyun Park

    发明人： Won-Cheol Jeong ,  Jae-hyun Park

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  H01L27/228

    摘要： A magnetic memory device includes bottom electrodes disposed on an interlayer dielectric on a substrate. The bottom electrodes are spaced apart from one another in one direction as much as a first distance. A planarized insulation layer fills spaces between the bottom electrodes and has a top surface coplanar with a top surface of the bottom electrode. Magnetic tunnel junction (MTJ) patterns are connected to the bottom electrodes, respectively, and are spaced apart from one another in the one direction as much as a second distance. The first distance is equal to the second distance.

    摘要翻译： 磁存储器件包括设置在衬底上的层间电介质上的底电极。 底部电极在一个方向上彼此间隔开多达第一距离。 平坦化绝缘层填充底部电极之间的空间，并且具有与底部电极的顶表面共面的顶表面。 磁隧道结（MTJ）图案分别连接到底部电极，并且在一个方向上彼此间隔开多达第二距离。 第一距离等于第二距离。

    PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same
    10.
    发明授权
    PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same 有权
    PRAMS具有顺序地定位的多个活性区域和形成该活性区域的方法

    公开(公告)号：US07479405B2

    公开(公告)日：2009-01-20

    申请号：US11982940

    申请日：2007-11-06

    申请人： Jae-hyun Park ,  Hyeong-geun An ,  Su-jin Ahn ,  Yoon-jong Song ,  Hyung-joo Youn ,  Kyu-chul Kim

    发明人： Jae-hyun Park ,  Hyeong-geun An ,  Su-jin Ahn ,  Yoon-jong Song ,  Hyung-joo Youn ,  Kyu-chul Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/144

    摘要： There are provided PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same. The PRAM and the method provide an approach to rapidly changing phase in a phase change layer pattern with a given design rule. A semiconductor substrate defining at least one reference active region is prepared in a cell array region and a peripheral circuit region. Other semiconductor substrates on a vertical line passing a main surface of the reference active region are located in sequence. The other semiconductor substrates define other active regions, respectively. A lower cell gate pattern is formed on the semiconductor substrate of the reference active region, and upper cell gate patterns are disposed on the other semiconductor substrates of the other active regions, respectively.

    摘要翻译： 提供了具有顺序定位的多个活性区域和其形成方法的PRAMS。 PRAM和该方法提供了用给定设计规则快速改变相变层图案中的相位的方法。 在单元阵列区域和外围电路区域中制备限定至少一个参考有源区的半导体衬底。 在通过参考有源区域的主表面的垂直线上的其它半导体衬底依次定位。 其他半导体衬底分别限定其它有源区。 在参考有源区的半导体衬底上形成下电池栅极图案，并且上电池栅极图案分别设置在其它有源区的其它半导体衬底上。