公开(公告)号：US20130214161A1

公开(公告)日：2013-08-22

申请号：US13882944

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/08 ,  H01L27/144

CPC classification number: G01J5/0862 ,  H01L27/144 ,  H01L27/14621 ,  H01L27/14647

Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

Abstract translation: 可见光和近红外辐射的检测器包括近红外光敏元件，用于读取近红外感光元件的读出电路，四个可见感光元件，其中一个面向近红外感光元件放置，四个着色 树脂过滤器来定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素设置有对可见光辐射不透明的树脂滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。

公开(公告)号：US09040916B2

公开(公告)日：2015-05-26

申请号：US13882914

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/20 ,  H01L27/14 ,  H01L31/00 ,  H01L27/146 ,  H01L31/18

CPC classification number: G01J5/20 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/18

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract translation: 可见光和近红外辐射检测器包括近红外感光元件，用于读取近红外感光元件的读出电路，四个可见感光元件，其中一个面向近红外光敏元件放置，三个干涉滤光片 定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素没有滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。 每个干涉滤光器包括金属层和电介质层的交替。

公开(公告)号：US20130214160A1

公开(公告)日：2013-08-22

申请号：US13882914

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/20 ,  H01L31/18 ,  H01L27/146

CPC classification number: G01J5/20 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/18

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract translation: 可见光和近红外辐射检测器包括近红外感光元件，用于读取近红外感光元件的读出电路，四个可见感光元件，其中一个面向近红外光敏元件放置，三个干涉滤光片 定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素没有滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。 每个干涉滤光器包括金属层和电介质层的交替。

公开(公告)号：US09880057B2

公开(公告)日：2018-01-30

申请号：US13882944

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/08 ,  H01L27/146 ,  H01L27/144

CPC classification number: G01J5/0862 ,  H01L27/144 ,  H01L27/14621 ,  H01L27/14647

Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

公开(公告)号：US09245915B2

公开(公告)日：2016-01-26

申请号：US13882441

申请日：2011-11-03

Applicant: Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

Inventor： Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/02165 ,  H01L31/18

Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

Abstract translation: 本发明涉及一种辐射检测装置，其包括硅基板和红外光电二极管，该红外光电二极管由优化用于红外检测的材料制成 衬底包括形成在电绝缘材料中的感光区域，读出电路和互连。 互连和金属触点连接读出电路，感光区域和红外光电二极管。 检测装置还包括覆盖感光区而不覆盖红外光电二极管的红外辐射滤波结构。

公开(公告)号：US08817150B2

公开(公告)日：2014-08-26

申请号：US13152333

申请日：2011-06-03

Applicant: Benoit Giffard ,  Yvon Cazaux

Inventor： Benoit Giffard ,  Yvon Cazaux

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/374 ,  H01L27/146 ,  H04N5/372

CPC classification number: H04N3/1525 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H04N3/155 ,  H04N5/37206 ,  H04N5/3743

Abstract: A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.

Abstract translation: 时间延迟积分图像传感器包括以行和列组织的像素矩阵。 每个像素包括第一感光元件，存储节点和连接在第一感光元件和存储节点之间的第一传输元件。每个像素还包括第二感光元件，连接在第二感光元件和存储节点之间的第二传输元件 以及连接在该列的相邻像素的存储节点和第二感光元件之间的第三传送元件。 控制电路被配置为同时将第一和第二传递元件命令为导通状态，并将第三传递元件命令为断开状态，并且在不同的相位中，同时将第一和第三传递元件命令为接通状态，并且第二传递元件 关闭状态。

公开(公告)号：US08451354B2

公开(公告)日：2013-05-28

申请号：US13103492

申请日：2011-05-09

Applicant: Yvon Cazaux ,  Benoit Giffard

Inventor： Yvon Cazaux ,  Benoit Giffard

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H04N5/3743

Abstract: An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.

Abstract translation: 时间延迟积分图像传感器包括以行和列组织的感光像素的矩阵，与控制相关联的存储器单元的第一矩阵和用于存储存储器单元行中的几行像素的累积亮度级别的附加装置。 第一存储单元矩阵设置有控制和加法装置，用于在其行中存储像素矩阵的前半部分的行的累积亮度级。 所述传感器包括与所述控制相关联的第二存储单元阵列和用于将所述像素矩阵的后半部分的行的累积亮度级别存储在所述第二存储单元矩阵的行中的相加装置。 提供了用于将第一存储单元矩阵的一行中累积的电平加到累积在第二存储单元矩阵的对应行中的电平的装置。

公开(公告)号：US20130284889A1

公开(公告)日：2013-10-31

申请号：US13882441

申请日：2011-11-03

Applicant: Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

Inventor： Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/02165 ,  H01L31/18

Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

Abstract translation: 本发明涉及一种辐射检测装置，其包括硅基板和红外光电二极管，该红外光电二极管由优化用于红外检测的材料制成 衬底包括形成在电绝缘材料中的感光区域，读出电路和互连。 互连和金属触点连接读出电路，感光区域和红外光电二极管。 检测装置还包括覆盖感光区而不覆盖红外光电二极管的红外辐射滤波结构。

公开(公告)号：US06541839B1

公开(公告)日：2003-04-01

申请号：US09486063

申请日：2000-03-10

Applicant: Benoit Giffard

Inventor： Benoit Giffard

IPC: H01L21265

CPC classification number: H01L21/763

Abstract: A microelectronic structure with a low voltage part and high voltage part, such that the low voltage part is protected against the high voltage part and process of obtaining this protection. The structure includes at least one low-voltage element (2) and at least high-voltage element (4) formed on a semi-conductor substrate (6). According to the invention, at least one channel (18) is formed, passing through the low-voltage element and one semi-conductor zone is formed with doping opposite to that of the substrate, at least around the walls of the channel or channels and a contact point (24) is established in this zone. Application to smart power integrated circuits.

Abstract translation: 具有低电压部分和高电压部分的微电子结构，使得低电压部分受到高压部分的保护和获得该保护的过程。该结构包括至少一个低电压元件（2）和至少高 电压元件（4）形成在半导体衬底（6）上。 根据本发明，形成至少一个通道（18），穿过低电压元件，并且至少在通道或通道的壁周围形成一个半导体区域，其具有与衬底相反的掺杂， 在该区域中建立接触点（24）。 应用于智能电力集成电路。

公开(公告)号：US6061219A

公开(公告)日：2000-05-09

申请号：US113463

申请日：1998-07-10

Applicant: Benoit Giffard

Inventor： Benoit Giffard

IPC: H01L27/04 ,  H01L21/822 ,  H02H9/02 ,  H02H9/00

CPC classification number: H02H9/025

Abstract: Device for the protection of an electrical load. A branch (4) connects an input terminal (1) to an output terminal (2). The branch includes in series:a channel of a first transistor (10) of the "normally on" type anda channel of a second transistor (20) of the "normally on" type of a second conductivity type. A gate (10g) of the first transistor (10) is connected to the output terminal (2) and a gate (20g) of the second transistor (20) is connected to the input terminal (1) by means of a third "normally on" transistor (30) of the first conductivity type. A gate (30g) is connected to a node (6) between the channels of the first and second transistors. The device has application to the protection of electronic components.

Abstract translation: 用于保护电气负载的装置。 分支（4）将输入端（1）连接到输出端（2）。 该分支包括：“通常”类型的第一晶体管（10）的沟道和第二导电类型的“常开”型的第二晶体管（20）的沟道。 第一晶体管（10）的栅极（10g）连接到输出端子（2），第二晶体管（20）的栅极（20g）通过第三“正常”连接到输入端子 在第一导电类型的“晶体管（30）上。 栅极（30g）连接到第一和第二晶体管的通道之间的节点（6）。 该器件具有应用于电子元件的保护。