公开(公告)号：US20240136800A1

公开(公告)日：2024-04-25

申请号：US18546593

申请日：2022-01-27

Applicant: ams-OSRAM International GMBH

Inventor： Bruno Jentzsch ,  Hubert Halbritter ,  Alexander Behres ,  Alvaro Gomez-lglesias ,  Christian Lauer ,  Simon Baumann

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/343 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/3095

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

公开(公告)号：US20250063869A1

公开(公告)日：2025-02-20

申请号：US18721565

申请日：2022-11-28

Applicant: ams-OSRAM International GmbH

Inventor： Hubert Halbritter

IPC: H01L33/60 ,  H01L25/075

Abstract: In an embodiment an optoelectronic semiconductor component includes at least one lamella with a longitudinal axis extending along an imaginary straight line and an electrically conductive main body with a recess, wherein the lamella includes a first semiconductor region of a first conductivity, a second semiconductor region of a second conductivity and an active region arranged between the first and the second semiconductor region, the active region being configured to emit a first electromagnetic radiation, wherein the lamella is arranged at least partially in the recess, and wherein the lamella has a length along the longitudinal axis which, within a manufacturing tolerance, corresponds to half a wavelength or an integer multiple of half the wavelength of the first electromagnetic radiation.

公开(公告)号：US20240022044A1

公开(公告)日：2024-01-18

申请号：US18253256

申请日：2021-11-19

Applicant: ams-OSRAM International GmbH

Inventor： Hubert Halbritter ,  Bruno Jentzsch ,  Christian Lauer ,  Peter Fuchs

IPC: H01S5/10 ,  H01S5/02255 ,  H01S5/028

CPC classification number: H01S5/1021 ,  H01S5/02255 ,  H01S5/1092 ,  H01S5/0287

Abstract: In an embodiment a semiconductor laser includes a semiconductor body having a plurality of resonator regions, wherein the resonator regions are arranged side by side along a lateral direction, each resonator region having an active region configured to generate radiation, wherein the semiconductor body extends between two side faces, wherein the resonator regions are configured to emit laser radiation at one of the two side faces, and a layer sequence attached to at least one of the side faces, wherein the layer sequence forms at least part of a resonator mirror for at least one resonator region.

公开(公告)号：US20240235164A9

公开(公告)日：2024-07-11

申请号：US18546593

申请日：2022-01-27

Applicant: ams-OSRAM International GMBH

Inventor： Bruno Jentzsch ,  Hubert Halbritter ,  Alexander Behres ,  Alvaro Gomez-lglesias ,  Christian Lauer ,  Simon Baumann

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/343 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/3095

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

公开(公告)号：US11990838B2

公开(公告)日：2024-05-21

申请号：US17560385

申请日：2021-12-23

Applicant: ams-OSRAM International GmbH

Inventor： Ann Russell ,  Joseph Gasiewicz ,  Syedhossein Mousavian ,  Somayeh Abnavi ,  Hubert Halbritter ,  Steffen Strauss

IPC: G01S7/484 ,  H01S5/042 ,  H01S5/40 ,  H02M3/158

CPC classification number: H02M3/158 ,  G01S7/484 ,  H01S5/0428 ,  H01S5/4025

Abstract: A driver circuit may include a first inductor with a first terminal coupled to a first voltage terminal and a first switch with a first and a second terminal. The first terminal of the first switch is coupled to a second terminal of the first inductor via a first node and the second terminal of the first switch is coupled to a second voltage terminal. Moreover, the driver circuit may include a diode with a first terminal coupled to the first node, an output terminal, and a first capacitor with a first electrode coupled to a second terminal of the diode and a second electrode coupled to the output terminal.