Quartz glass body for optical component and process for manufacture thereof
    7.
    发明授权
    Quartz glass body for optical component and process for manufacture thereof 有权
    用于光学部件的石英玻璃体及其制造方法

    公开(公告)号:US06550277B1

    公开(公告)日:2003-04-22

    申请号:US09709168

    申请日:2000-11-10

    Abstract: The invention concerns a quartz glass body for an optical component for the transmission of UV radiation with a wavelength of 250 nm and less, especially for a wavelength of 157 nm, as well as a process for the manufacture of the quartz glass body where fine quartz glass particles are formed by flame hydrolysis of a silicon compound, deposited and vitrified. Suitability of a quartz glass as represented by high base transmission and radiation resistance depends on structural properties caused by local stoichiometric deviations, and on the chemical composition. The quartz glass body according to the inventions is distinguished by a uniform base transmission (relative change of base transmission ≦1%) in the wavelength range from 155 nm to 250 nm (radiation penetration depth of 10 mm) of at least 80%, a low OH content (less than 10 ppm by weight) and a glass structure substantially free from oxygen defect centers. A quartz glass body of this kind is manufactured by a process which allows bulk embedding of hydrogen or oxygen into the glass network in that at least a two stage heat treatment takes place at temperatures ranging from 850° C. to 1600° C. before the vitrification, the last stage comprising sintering at a temperature between 1300° C. and 1600° C. in an atmosphere containing hydrogen or oxygen, or a nonflammable mixture of these substances.

    Abstract translation: 本发明涉及一种用于传输波长为250nm以下,特别是波长为157nm的紫外线的光学部件的石英玻璃体,以及用于制造石英玻璃体的方法,其中精细的石英 通过硅化合物的火焰水解形成玻璃颗粒,沉积并玻璃化。 由高碱性透射和耐辐射性表示的石英玻璃的适用性取决于由局部化学计量偏差引起的结构特性以及化学成分。 根据本发明的石英玻璃体的特征在于在155nm至250nm(辐射穿透深度为10mm)的波长范围内的均匀的基底透射率(基底透射率的相对变化<= 1%)为至少80% 低OH含量(小于10ppm重量)和基本上不含氧缺陷中心的玻璃结构。 这种石英玻璃体是通过允许将氢气或氧气大量嵌入玻璃网络的方法来制造的,因为至少在两个阶段之间的热处理在850℃至1600℃之间的温度下进行 玻璃化,最后阶段包括在含有氢气或氧气的气氛中在1300℃和1600℃之间的温度下烧结,或这些物质的不可燃混合物。

    Nonlinear optical silica material and nonlinear optical device
    8.
    发明授权
    Nonlinear optical silica material and nonlinear optical device 有权
    非线性光学二氧化硅材料和非线性光学器件

    公开(公告)号:US06376086B1

    公开(公告)日:2002-04-23

    申请号:US09362547

    申请日:1999-07-28

    Abstract: A nonlinear optical silica material mainly consisting of SiO2—GeO2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge—O bonds and one Ge—H (or Ge—X) bond at Ge· points where nonlinearity is exhibited in the silica material. The Ge—H (or Ge—X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge·, an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance. An insulating film can be interposed between the semiconductor substrate and the nonlinear optical silica film to prevent undesired impurities from dispersing into the semiconductor substrate and other elements and preventing a defect from being caused in the crystal of the substrate due to the silica film.

    Abstract translation: 主要由添加有氢或卤素元素X的SiO 2 -GOO组成的非线性光学二氧化硅材料。 在非线性光学二氧化硅材料中包含的与Ge结合的氧被H或X替代,并且一个Ge在Ge处具有两个Ge-O键和一个Ge-H(或Ge-X)键。 在二氧化硅材料中显示出非线性的点。 Ge-H(或Ge-X)键与晶体网络无关,因此当极性取向为在Ge表现出非线性时,可以降低要施加的电场,而当光半导体 制造混合元件等,可以防止半导体元件的其他部分的性能破坏或劣化。 可以在半导体衬底和非线性光学二氧化硅膜之间插入绝缘膜,以防止不期望的杂质分散到半导体衬底和其它元件中,并防止由于二氧化硅膜而在衬底的晶体中引起缺陷。

Patent Agency Ranking