公开(公告)号：US10006884B1

公开(公告)日：2018-06-26

申请号：US14822103

申请日：2015-08-10

Applicant: Seagate Technology LLC

Inventor： Ganping Ju ,  Jason L Presseky ,  Roy W. Chantrell ,  Xiaowei Wu ,  Xi Chen ,  Xiaobin Zhu ,  Yingguo Peng

IPC: G01R33/00 ,  G01N27/80

CPC classification number: G01N27/80 ,  G01K7/00 ,  G03G5/16 ,  G06F17/18 ,  G11B11/10591 ,  G11B2005/0021 ,  H01F41/304 ,  H01L37/00 ,  H01L37/04

Abstract: Determining a Curie temperature (Tc) distribution of a sample comprising magnetic material involves subjecting the sample to an electromagnetic field, heating the sample over a range of temperatures, generating a signal representative of a parameter of the sample that changes as a function of changing sample temperature while the sample is subjected to the electromagnetic field, and determining the Tc distribution of the sample using the generated signal and a multiplicity of predetermined parameters of the sample.

公开(公告)号：US20170294504A1

公开(公告)日：2017-10-12

申请号：US15628782

申请日：2017-06-21

Applicant: International Business Machines Corporation

Inventor： Hariklia Deligianni ,  William J. Gallagher ,  Eugene J, O'Sullivan ,  Naigang Wang

IPC: H01L49/02 ,  H01L21/3205 ,  H01L21/3213 ,  H01F10/32 ,  H01F1/147 ,  H01F41/04 ,  H01F27/24 ,  H01L21/027 ,  H01F27/28

CPC classification number: H01L28/10 ,  C23C14/14 ,  H01F1/147 ,  H01F1/14708 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  H01F17/0006 ,  H01F27/24 ,  H01F27/2804 ,  H01F41/042 ,  H01F41/304 ,  H01F2017/0066 ,  H01F2027/2809 ,  H01L21/0273 ,  H01L21/32051 ,  H01L21/32139

Abstract: Disclosed are magnetic structures, including on-chip inductors comprising laminated layers comprising, in order, a barrier and/or adhesion layer, a antiferromagnetic layer, a magnetic growth layer, a soft magnetic layer, an insulating non-magnetic spacer, a soft magnetic layer, a magnetic growth later, an antiferromagnetic layer. Also disclosed are methods of making such structures.

公开(公告)号：US07601547B2

公开(公告)日：2009-10-13

申请号：US11451925

申请日：2006-06-12

Applicant: James G. Deak

Inventor： James G. Deak

IPC: H01L21/8239

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3272 ,  H01F41/304 ,  H01L43/12

Abstract: A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.

Abstract translation: 提供了一种制造用于MRAM器件的固定层的方法。 该方法包括提供固定层。 固定层包括衬底上的反铁磁钉扎层和钉扎层上的铁磁性钉扎层，钉扎层具有第一厚度。 固定层还包括被钉扎层上的间隔层，以及间隔层上方的铁磁参考层，参考层具有第二厚度。 该方法还包括使用时间温度/磁场分布退火固定层，该轮廓具有最大磁场强度（Hanneal）。 基于被钉扎层的第一厚度和参考层的第二厚度来选择轮廓。

公开(公告)号：US07362548B2

公开(公告)日：2008-04-22

申请号：US11497378

申请日：2006-08-02

Applicant: Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

Inventor： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC: G11B5/127

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

Abstract: A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

Abstract translation: 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US07083988B2

公开(公告)日：2006-08-01

申请号：US10764832

申请日：2004-01-26

Applicant: James G. Deak

Inventor： James G. Deak

IPC: H01L21/8239

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3272 ,  H01F41/304 ,  H01L43/12

Abstract: A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.

Abstract translation: 提供了一种制造用于MRAM器件的固定层的方法。 该方法包括提供固定层。 固定层包括衬底上的反铁磁钉扎层和钉扎层上的铁磁性钉扎层，钉扎层具有第一厚度。 固定层还包括被钉扎层上的间隔层，以及间隔层上方的铁磁参考层，参考层具有第二厚度。 该方法还包括使用时间温度/磁场分布对固定层进行退火，该轮廓具有最大磁场强度（H H 3退火）。 基于被钉扎层的第一厚度和参考层的第二厚度来选择轮廓。

公开(公告)号：US06721145B2

公开(公告)日：2004-04-13

申请号：US10037269

申请日：2002-01-02

Applicant: Robert S. Beach

Inventor： Robert S. Beach

IPC: G11B5127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/012 ,  G11B5/3909 ,  G11B2005/0008 ,  G11B2005/0016 ,  H01F10/3218 ,  H01F41/304 ,  Y10T29/49034

Abstract: A method of initializing a magnetic sensor having two antiferromagnetic layers is described. The method takes advantage of the spin flop effect such that the two antiferromagnetic layers may be orthogonally initialized. The signal polarity of the sensor is well controlled.

Abstract translation: 描述了一种初始化具有两个反铁磁层的磁传感器的方法。 该方法利用了自旋触发效应，使得两个反铁磁层可以被正交初始化。 传感器的信号极性得到很好的控制。

公开(公告)号：US06639764B2

公开(公告)日：2003-10-28

申请号：US09358123

申请日：1999-07-20

Applicant: Masamichi Saito ,  Naoya Hasegawa

Inventor： Masamichi Saito ,  Naoya Hasegawa

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49055 ,  Y10T29/49067

Abstract: An antiferromagnetic layer is formed of a PtMn alloy which has high blocking temperature and further generates a great exchange coupling magnetic field with a first pinned magnetic layer. Further, by appropriately adjusting the film thickness ratio of the first pinned magnetic layer and a second pinned magnetic layer, the film thickness of a nonmagnetic electrically conductive layer and the antiferromagnetic layer, and so forth, an exchange coupling magnetic field of at least 500 (Oe) or greater, preferably 1,000 (Oe) or greater, can be obtained.

公开(公告)号：US20030011941A1

公开(公告)日：2003-01-16

申请号：US09538336

申请日：2000-03-29

Inventor： Yukie Nakazawa ,  Masamichi Saito ,  Naoya Hasegawa ,  Akihiro Makino

IPC: G11B005/127 ,  G11B005/33

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  G11C11/1675 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49055

Abstract: A second antiferromagnetic layer formed on a free magnetic layer has a blocking temperature lower than that of a first antiferromagnetic layer. The exchange anisotropic magnetic field between the free magnetic layer and the second antiferromagnetic layer is smaller than the exchange anisotropic magnetic field between the first antiferromagnetic layer and the pinned magnetic layer. By applying an annealing treatment utilizing the blocking temperature difference between the first and second antiferromagnetic layers, the magnetization direction and the strength of the pinned magnetic layer and the free magnetic layer can be controlled appropriately.

Abstract translation: 形成在自由磁性层上的第二反铁磁层的阻挡温度低于第一反铁磁性层的阻挡温度。 自由磁性层与第二反铁磁性层之间的交换各向异性磁场小于第一反铁磁性层与被钉扎磁性层之间的交换各向异性磁场。 通过利用第一和第二反铁磁层之间的阻挡温度差进行退火处理，可以适当地控制磁化方向和钉扎磁性层和自由磁性层的强度。

公开(公告)号：US06469878B1

公开(公告)日：2002-10-22

申请号：US09500778

申请日：2000-02-08

Applicant: Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

Inventor： Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3113 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034

Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.

公开(公告)号：US06424506B1

公开(公告)日：2002-07-23

申请号：US09357915

申请日：1999-07-20

Applicant: Masamichi Saito ,  Naoya Hasegawa

Inventor： Masamichi Saito ,  Naoya Hasegawa

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49055 ,  Y10T29/49067

Abstract: A spin-valve magnetoresistive element includes a plurality of layers. The magnetic moment of a first pinned magnetic layer is greater than the magnetic moment of a second pinned magnetic layer, and the magnetic moment of the first pinned magnetic layer faces in the left direction in the drawing. Accordingly, the synthesized magnetic moment of the first pinned magnetic layer and the second pinned magnetic layer faces in the left direction in the drawing. Thus, causing a sensing current to flow in a first direction so as to generate a sensing galvanomagnetic field circling in the right-hand direction causes the direction of the sensing galvanomagnetic field and the direction of the synthesized magnetic moment to match, thereby facilitating improvement in the stability of the magnetization state of the first and second pinned magnetic layers.

Abstract translation: 自旋阀磁阻元件包括多个层。 第一钉扎磁性层的磁矩大于第二钉扎磁性层的磁矩，并且第一钉扎磁性层的磁矩在图中向左方向。 因此，图中第一被钉扎磁性层和第二固定磁性层的合成磁矩面向左方向。 因此，使得感测电流沿第一方向流动，以便产生沿右手方向盘绕的感测电磁场使得感测电磁场的方向和合成磁矩的方向匹配，从而有助于改进 第一和第二固定磁性层的磁化状态的稳定性。