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公开(公告)号：US08791424B2
公开(公告)日：2014-07-29
申请号：US13814612
申请日：2011-08-24
Applicant: Dominique Cloetta
Inventor： Dominique Cloetta
CPC classification number: H01J1/46 , G21K5/02 , H01J3/027 , H01J33/02 , H01J2203/022
Abstract: The invention relates to a control grid for an electron beam generating device, wherein the control grid comprises apertures arranged in rows in a width direction and columns in a height direction, wherein a majority of the apertures in a row have the same size, and wherein the size of the apertures of at least one row differs from the size of the apertures of another row.
Abstract translation: 本发明涉及一种用于电子束产生装置的控制栅格，其中控制栅格包括在宽度方向上排列成排的孔和高度方向的列，其中一排中的大部分孔具有相同的尺寸，并且其中 至少一排的孔的尺寸与另一排的孔的尺寸不同。
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公开(公告)号：US20130140474A1
公开(公告)日：2013-06-06
申请号：US13814612
申请日：2011-08-24
Applicant: Dominique Cloetta
Inventor： Dominique Cloetta
IPC: H01J1/46
CPC classification number: H01J1/46 , G21K5/02 , H01J3/027 , H01J33/02 , H01J2203/022
Abstract: The invention relates to a control grid for an electron beam generating device, wherein the control grid comprises apertures arranged in rows in a width direction and columns in a height direction, wherein a majority of the apertures in a row have the same size, and wherein the size of the apertures of at least one row differs from the size of the apertures of another row.
Abstract translation: 本发明涉及一种用于电子束产生装置的控制栅格，其中控制栅格包括在宽度方向上排列成排的孔和高度方向的列，其中一排中的大部分孔具有相同的尺寸，并且其中 至少一排的孔的尺寸与另一排的孔的尺寸不同。
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公开(公告)号：US20090189508A1
公开(公告)日：2009-07-30
申请号：US12341803
申请日：2008-12-22
Applicant: Jae-Sang Ha , Sang-Jin Lee
Inventor： Jae-Sang Ha , Sang-Jin Lee
IPC: H01J1/00
CPC classification number: H01J3/021 , H01J63/02 , H01J63/06 , H01J2203/022 , H01J2203/0224
Abstract: A backlight unit includes a base substrate and a first electrode which is formed on the base substrate in a line. An electron emission layer is formed on the first electrode in the substantially same pattern as the first electrode. A second electrode supporter is formed on the base substrate and disposed on sides of the first electrode and the electron emission layer. A second electrode is formed on the second electrode supporter and has an aperture pattern. A third electrode is formed on the front substrate for accelerating electrons emitted from the electron emission layer. A phosphor layer is formed on the third electrode responsive to electrons accelerated by the third electrode.
Abstract translation: 背光单元包括基底基板和在基底基板上一行形成的第一电极。 以与第一电极基本相同的图案形成在第一电极上的电子发射层。 第二电极支撑件形成在基底基板上并且设置在第一电极和电子发射层的侧面上。 第二电极形成在第二电极支撑件上并具有孔径图案。 第三电极形成在前基板上，用于加速从电子发射层发射的电子。 响应于被第三电极加速的电子，在第三电极上形成荧光体层。
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Patent Agency Ranking
公开(公告)号：US20070194689A1
公开(公告)日：2007-08-23
申请号：US11702539
申请日：2007-02-06
Applicant: Sang-Hyuck Ahn , Sang-Jo Lee , Byung-Gil Jea , Sang-Ho Jeon , Su-Bong Hong , Jin-Hui Cho
Inventor： Sang-Hyuck Ahn , Sang-Jo Lee , Byung-Gil Jea , Sang-Ho Jeon , Su-Bong Hong , Jin-Hui Cho
CPC classification number: H01J31/127 , H01J1/304 , H01J3/021 , H01J29/467 , H01J29/481 , H01J2203/0204 , H01J2203/022 , H01J2203/0248 , H01J2329/041 , H01J2329/4617 , H01J2329/4647
Abstract: An electron emission device includes a substrate, first electrodes formed on the substrate, electron emission regions electrically connected to the first electrodes, and second electrodes placed over the first electrodes such that the second electrodes are insulated from the first electrodes. The second electrodes have openings to expose the electron emission regions. A third electrode is placed over the second electrodes such that the third electrode is insulated from the second electrodes. The third electrode has openings communicating with the openings of the second electrodes. Each of the electron emission regions and the second electrodes simultaneously satisfy the following conditions: D2/D1≦0.579, (1) and D2≧1 μ (2) where D1 indicates the width of each of the openings of the second electrode, and D2 indicates the width of each of the electron emission regions.
Abstract translation: 电子发射装置包括基板，形成在基板上的第一电极，与第一电极电连接的电子发射区域，以及设置在第一电极上的第二电极，使得第二电极与第一电极绝缘。 第二电极具有露出电子发射区的开口。 第三电极放置在第二电极上，使得第三电极与第二电极绝缘。 第三电极具有与第二电极的开口连通的开口。 每个电子发射区域和第二电极同时满足以下条件：<线内公式描述=“在线公式”end =“lead”→D2 / D1 <= 0.579，（1） in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>和<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> D2> = 1 mu（2）<？in-line -formulae description =“In-line Formulas”end =“tail”？>其中D 1表示第二电极的每个开口的宽度，D 2表示每个电子发射区域的宽度。
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5.发明申请公开(公告)号：US20100237763A1
公开(公告)日：2010-09-23
申请号：US12726115
申请日：2010-03-17
Applicant: Takao Shiraga , Kazunori Kitagawa , Toshio Kaneshige , Norio Nishimura
Inventor： Takao Shiraga , Kazunori Kitagawa , Toshio Kaneshige , Norio Nishimura
CPC classification number: H01J9/025 , H01J3/021 , H01J29/04 , H01J31/127 , H01J2203/022 , H01J2329/4617
Abstract: The present invention provides a novel method for the manufacture of an enhanced cold cathode electron emission source allowing a measure of area to be processed at one time. The method includes the steps of: dissolving first and second polymers in solvent to obtain a polymer solution, and applying the polymer solution onto a second conductive layer before forming a hole; precipitating and immobilizing the first polymer in a particulate in the second polymer by evaporating the solvent; removing the first polymer particulate with a developer to form an etching hole in the second polymer; and performing etching process via the etching hole so as to form the hole in the second conductive layer. In one embodiment, the second polymer has greater solubility than the first polymer in the solvent, and the first polymer has greater solubility than the second polymer in the developer.
Abstract translation: 本发明提供了一种用于制造增强型冷阴极电子发射源的新方法，其允许一次处理面积的测量。 该方法包括以下步骤：将第一和第二聚合物溶解在溶剂中以获得聚合物溶液，并在形成孔之前将聚合物溶液施加到第二导电层上; 通过蒸发溶剂将第一聚合物沉淀并固定在第二聚合物中的颗粒中; 用显影剂除去第一聚合物颗粒以在第二聚合物中形成蚀刻孔; 并通过蚀刻孔进行蚀刻处理，以便在第二导电层中形成孔。 在一个实施方案中，第二聚合物在溶剂中具有比第一聚合物更大的溶解度，并且第一聚合物在显影剂中的溶解度高于第二聚合物。
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公开(公告)号：US07652419B2
公开(公告)日：2010-01-26
申请号：US11702539
申请日：2007-02-06
Applicant: Sang-Hyuck Ahn , Sang-Jo Lee , Byung-Gil Jea , Sang-Ho Jeon , Su-Bong Hong , Jin-Hui Cho
Inventor： Sang-Hyuck Ahn , Sang-Jo Lee , Byung-Gil Jea , Sang-Ho Jeon , Su-Bong Hong , Jin-Hui Cho
IPC: H01J1/62
CPC classification number: H01J31/127 , H01J1/304 , H01J3/021 , H01J29/467 , H01J29/481 , H01J2203/0204 , H01J2203/022 , H01J2203/0248 , H01J2329/041 , H01J2329/4617 , H01J2329/4647
Abstract: An electron emission device includes a substrate, first electrodes formed on the substrate, electron emission regions electrically connected to the first electrodes, and second electrodes placed over the first electrodes such that the second electrodes are insulated from the first electrodes. The second electrodes have openings to expose the electron emission regions. A third electrode is placed over the second electrodes such that the third electrode is insulated from the second electrodes. The third electrode has openings communicating with the openings of the second electrodes. Each of the electron emission regions and the second electrodes simultaneously satisfy the following conditions: D2/D1≦0.579 (1), and D2≧1 μ (2) where D1 indicates the width of each of the openings of the second electrode, and D2 indicates the width of each of the electron emission regions.
Abstract translation: 电子发射装置包括基板，形成在基板上的第一电极，与第一电极电连接的电子发射区域，以及设置在第一电极上的第二电极，使得第二电极与第一电极绝缘。 第二电极具有露出电子发射区的开口。 第三电极放置在第二电极上，使得第三电极与第二电极绝缘。 第三电极具有与第二电极的开口连通的开口。 每个电子发射区和第二电极同时满足以下条件：D2 / D1和D2> =1μ（2）其中D1表示第二电极的每个开口的宽度，D2表示每个的宽度 的电子发射区域。
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公开(公告)号：US10014148B2
公开(公告)日：2018-07-03
申请号：US14904061
申请日：2015-08-19
Applicant: Nuctech Company Limited
Inventor： Huaping Tang , Zhiqiang Chen , Yuanjing Li , Yonggang Wang , Zhanfeng Qin
CPC classification number: H01J35/065 , H01J3/021 , H01J35/14 , H01J2203/022 , H01J2203/0224 , H01J2203/0236 , H01J2235/062 , H01J2235/068 , H05G1/52
Abstract: The present disclosure is directed to an electron source and an X-ray source using the same. The electron source of the present invention comprises: at least two electron emission zones, each of which comprises a plurality of micro electron emission units, wherein the micro electron emission unit comprises: a base layer, an insulating layer on the base layer, a grid layer on the insulating layer, an opening in the grid layer, and an electron emitter that is fixed at the base layer and corresponds to a position of the opening, wherein the micro electron emission units in the same electron emission zone are electrically connected and simultaneously emit electrons or do not emit electrons at the same time, and wherein different electron emission zones are electrically partitioned.
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公开(公告)号：US20170162359A1
公开(公告)日：2017-06-08
申请号：US14904061
申请日：2015-08-19
Applicant: NUCTECH COMPANY LIMITED
Inventor： Huaping Tang , Zhiqiang Chen , Yuanjing Li , Yonggang Wang , Zhanfeng Qin
CPC classification number: H01J35/065 , H01J3/021 , H01J35/14 , H01J2203/022 , H01J2203/0224 , H01J2203/0236 , H01J2235/062 , H01J2235/068 , H05G1/52
Abstract: The present disclosure is directed to an electron source and an X-ray source using the same. The electron source of the present invention comprises: at least two electron emission zones, each of which comprises a plurality of micro electron emission units, wherein the micro electron emission unit comprises: a base layer, an insulating layer on the base layer, a grid layer on the insulating layer, an opening in the grid layer, and an electron emitter that is fixed at the base layer and corresponds to a position of the opening, wherein the micro electron emission units in the same electron emission zone are electrically connected and simultaneously emit electrons or do not emit electrons at the same time, and wherein different electron emission zones are electrically partitioned.
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