公开(公告)号：US06908511B2

公开(公告)日：2005-06-21

申请号：US10314871

申请日：2002-12-09

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： B05C11/00 ,  B05C13/00 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  H01L21/00

CPC分类号： H01L21/67103 ,  F28D2021/0077 ,  G03F7/168 ,  G03F7/38 ,  G03F7/40 ,  H01L21/67109

摘要： A method and apparatus for baking a film onto a substrate. A film, such as a layer of photoresist, is disposed on a first surface of a substrate while a second surface is exposed to a liquid bath. The liquid bath is maintained at a pre-selected temperature. Exposure of the substrate to the liquid bath allows the film on the opposite surface to bake. The liquid bath is then re-circulated to maintain a constant and uniform temperature gradient across the substrate.

摘要翻译： 一种将薄膜烘烤在基材上的方法和装置。 将诸如光致抗蚀剂层的膜设置在基板的第一表面上，同时将第二表面暴露于液槽。 液浴保持在预先选定的温度。 将基板暴露于液槽允许相对表面上的膜被烘烤。 然后液体浴再次循环，以保持基板上恒定均匀的温度梯度。

公开(公告)号：US06767785B2

公开(公告)日：2004-07-27

申请号：US10125977

申请日：2002-04-19

申请人： J. Brett Rolfson ,  Monte Manning

发明人： J. Brett Rolfson ,  Monte Manning

IPC分类号： H01L218234

CPC分类号： H01L28/20 ,  H01L21/76888 ,  H01L21/76895 ,  H01L27/11 ,  H01L27/1112 ,  Y10S257/903 ,  Y10S257/904 ,  Y10S438/98

摘要： Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filed with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

摘要翻译： 公开了从半导体材料形成电阻器和二极管的方法，以及结合电阻器的静态随机存取存储器（SRAM）单元以及并入电阻器和二极管的集成电路的方法。 提供要进行电连接的节点。 在节点外部设置一个电绝缘层。 在节点上的电绝缘层中设置开口。 开口采用依赖于配置的半导体材料，用作垂直细长的二极管和电阻器中的一个或两个。

公开(公告)号：US06594013B2

公开(公告)日：2003-07-15

申请号：US10057363

申请日：2001-10-29

申请人： Randhir P. S. Thakur ,  Michael Nuttall ,  J. Brett Rolfson ,  Robert James Burke

发明人： Randhir P. S. Thakur ,  Michael Nuttall ,  J. Brett Rolfson ,  Robert James Burke

IPC分类号： G01B1100

CPC分类号： G01B11/303

摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

公开(公告)号：US06489219B1

公开(公告)日：2002-12-03

申请号：US08555801

申请日：1995-11-09

申请人： Fernando Gonzalez ,  Thomas A. Figura ,  J. Brett Rolfson

发明人： Fernando Gonzalez ,  Thomas A. Figura ,  J. Brett Rolfson

IPC分类号： H01L21324

CPC分类号： H01L28/40 ,  H01L21/324 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： An improved method for alloying a semiconductor substrate upon which wordlines enclosed in spacers have been formed, with the substrate exposed between the wordlines. A thin sealing layer is then deposited over the substrate and the wordlines, the sealing layer helping to maintain the alloy in said substrate. The alloying material employed of the substrate is optionally monatomic hydrogen. Alloying the substrate with monatomic hydrogen may also be used after deposition of a metal layer, or at other process steps as desired.

摘要翻译： 一种用于合金化半导体衬底的改进方法，其上已经形成了封闭在间隔物中的字线，衬底暴露在字线之间。 然后在衬底和字线上沉积薄的密封层，密封层有助于将合金保持在所述衬底中。 所用基板的合金材料可以是单原子氢。 将基底与单原子氢合金也可以在沉积金属层之后使用，或者根据需要在其它工艺步骤中使用。

公开(公告)号：US06423606B1

公开(公告)日：2002-07-23

申请号：US09606665

申请日：2000-06-28

申请人： J. Brett Rolfson ,  Monte Manning

发明人： J. Brett Rolfson ,  Monte Manning

IPC分类号： H01L2120

CPC分类号： H01L28/20 ,  H01L21/76888 ,  H01L21/76895 ,  H01L27/11 ,  H01L27/1112 ,  Y10S257/903 ,  Y10S257/904 ,  Y10S438/98

摘要： Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

摘要翻译： 公开了从半导体材料形成电阻器和二极管的方法，以及结合电阻器的静态随机存取存储器（SRAM）单元以及并入电阻器和二极管的集成电路的方法。 提供要进行电连接的节点。 在节点外部设置一个电绝缘层。 在节点上的电绝缘层中设置开口。 开口填充有半导体材料，其取决于配置用作垂直细长的二极管和电阻器中的一个或两个。

公开(公告)号：US06395432B1

公开(公告)日：2002-05-28

申请号：US09365980

申请日：1999-08-02

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F900

CPC分类号： G03F1/30 ,  G03F1/29 ,  G03F1/84 ,  G03F7/0035 ,  G03F9/00

摘要： In but one implementation in the fabrication of a phase shift mask, both process alignment in the formation of a phase shift alignment region and degree of phase shift of the phase shift alignment region is determined at least in part by using aerial image measurement equipment. In one implementation, aerial image measurement equipment is used to both determine phase shift of a phase shift alignment region at least in part by capturing a series of aerial images as a function of focus and to determine process alignment in the formation of the phase shift alignment region at least in part by measuring distance between spaced low intensity locations defined by an edge of the phase shift alignment region and an adjacent alignment feature edge. In one implementation, process alignment in the formation of a phase shift alignment region is determined at least in part by using aerial image measurement equipment to determine photoresist patterning alignment prior to etching material to form said phase shift alignment region. In one implementation, aerial image measurement equipment is used to determine photoresist patterning alignment for formation of a phase shift alignment region at least in part by measuring distance between spaced intensity change locations defined by an alignment feature edge beneath the photoresist and an edge of the photoresist.

摘要翻译： 在制造相移掩模中的一个实施方案中，至少部分地通过使用空间图像测量设备来确定形成相移对准区域中的处理对准和相移对准区域的相移程度。 在一个实施方案中，空间图像测量设备用于至少部分地通过捕获作为焦点的函数的一系列空间图像来确定相移对准区域的相移，并且确定形成相移对准中的过程对准 至少部分地通过测量由相移对准区域的边缘和相邻对准特征边缘限定的间隔的低强度位置之间的距离。 在一个实施方案中，至少部分地通过使用空间图像测量设备来确定蚀刻材料之前的光致抗蚀剂图案化取向以形成所述相移对准区域来确定形成相移取向区域中的工艺对准。 在一个实施方案中，使用空间图像测量设备来确定用于形成相移对准区域的光致抗蚀剂图案化对准，至少部分地通过测量由光致抗蚀剂下方的对准特征边缘限定的间隔的强度变化位置与光致抗蚀剂的边缘之间的距离 。

公开(公告)号：US06340835B1

公开(公告)日：2002-01-22

申请号：US09526796

申请日：1999-10-07

申请人： J. Brett Rolfson ,  Monte Manning

发明人： J. Brett Rolfson ,  Monte Manning

IPC分类号： H01L2900

CPC分类号： H01L28/20 ,  H01L21/76888 ,  H01L21/76895 ,  H01L27/11 ,  H01L27/1112 ,  Y10S257/903 ,  Y10S257/904 ,  Y10S438/98

摘要： Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

摘要翻译： 公开了从半导体材料形成电阻器和二极管的方法，以及结合电阻器的静态随机存取存储器（SRAM）单元以及并入电阻器和二极管的集成电路的方法。 提供要进行电连接的节点。 在节点外部设置一个电绝缘层。 在节点上的电绝缘层中设置开口。 开口填充有半导体材料，其取决于配置用作垂直细长的二极管和电阻器中的一个或两个。

公开(公告)号：US06340834B1

公开(公告)日：2002-01-22

申请号：US09106992

申请日：1998-06-29

申请人： J. Brett Rolfson ,  Monte Manning

发明人： J. Brett Rolfson ,  Monte Manning

IPC分类号： H01L2900

CPC分类号： H01L28/20 ,  H01L21/76888 ,  H01L21/76895 ,  H01L27/11 ,  H01L27/1112 ,  Y10S257/903 ,  Y10S257/904 ,  Y10S438/98

摘要： Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

公开(公告)号：US06323139B1

公开(公告)日：2001-11-27

申请号：US09457093

申请日：1999-12-07

申请人： John T. Moore ,  Scott Jeffrey DeBoer ,  Mark Fischer ,  J. Brett Rolfson ,  Annette L. Martin ,  Ardavan Niroomand

发明人： John T. Moore ,  Scott Jeffrey DeBoer ,  Mark Fischer ,  J. Brett Rolfson ,  Annette L. Martin ,  Ardavan Niroomand

IPC分类号： H01L2131

CPC分类号： H01L21/0217 ,  G03F7/091 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3185

摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

摘要翻译： 一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上形成光致抗蚀剂。 另一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; c）在阻挡层上形成光致抗蚀剂; d）将所述光致抗蚀剂暴露于图案化的光束以使所述光致抗蚀剂的至少一部分在溶剂中比其它部分更易溶，所述阻挡层是吸收通过所述光致抗蚀剂的光的抗反射表面; 以及e）将所述光致抗蚀剂暴露于所述溶剂以除去所述至少一个部分，同时将所述另一部分留在所述阻挡层上。 在另一方面，本发明包括半导体晶片组件，包括：a）氮化硅材料，该材料具有表面; b）在所述材料的表面上的阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上并抵靠所述阻挡层的光致抗蚀剂。

公开(公告)号：US06183915B2

公开(公告)日：2001-02-06

申请号：US09200030

申请日：1998-11-25

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F900

CPC分类号： G03F1/30

摘要： The invention comprises forming of phase shifting reticles. In but one aspect, a method of forming a phase shifting reticle includes providing a substrate comprising light restricting material over light transmissive material. A photosensitive resist layer is deposited over the light restricting material. A pattern of openings is formed through the resist layer and into the light restricting material. Depressions are etched into the light transmissive material through the openings while at least some of the resist layer remains over the light restricting material. After this etching, exposed light transmissive material is etched to form phase shift areas therein. In but one aspect, a method of forming a phase shifting reticle comprises providing a substrate comprising an antireflective material formed over a reflective light restricting material formed over a light transmissive material. A photosensitive resist layer is deposited over the antireflective material. A pattern of openings is formed through the resist layer, through the antireflective material and through the reflective light restricting material to form a mask pattern having light transmissive areas and light restricting areas over the substrate. All of the antireflective coating material over the light restricting areas is masked within the mask pattern while etching light transmissive material within all light transmissive areas within the mask pattern. Some of the light transmissive areas are formed to comprise phase shift areas.

摘要翻译： 本发明包括形成相移掩模版。 在一方面，形成相移掩模版的方法包括在透光材料上提供包含光限制材料的基板。 在光限制材料上沉积光敏抗蚀剂层。 通过抗蚀剂层形成开口的图案并进入限光材料。 凹陷通过开口蚀刻到透光材料中，而抗蚀剂层中的至少一些保留在光限制材料上。 在该蚀刻之后，暴露的透光材料被蚀刻以在其中形成相移区域。 但是，一方面，形成相移掩模版的方法包括提供包括形成在透光材料上形成的反射光限制材料上的抗反射材料的基板。 在抗反射材料上沉积光敏抗蚀剂层。 通过抗蚀剂层，通过抗反射材料和反射光限制材料形成开口图案，以形成在衬底上方具有透光区域和光限制区域的掩模图案。 在光限制区域之外的所有抗反射涂层材料都被掩蔽在掩模图案内，同时在掩模图案内的所有光透射区域内蚀刻透光材料。 一些透光区域被形成为包括相移区域。