Transmitting and receiving apparatus and method in closed-loop MIMO antenna system using codebook
    91.
    发明申请
    Transmitting and receiving apparatus and method in closed-loop MIMO antenna system using codebook 审中-公开
    使用码本的闭环MIMO天线系统中的发射和接收装置和方法

    公开(公告)号:US20060279460A1

    公开(公告)日:2006-12-14

    申请号:US11448790

    申请日:2006-06-08

    Abstract: A receiver and transmitter of a closed-loop MIMO antenna system using a codebook and a receiving and transmitting method thereof are provided. The receiver of the MIMO antenna system includes a window size decider and a beamforming weight selector. The window size decider stores a codebook with beamforming weights and selects the beamforming weights corresponding to a window size from the codebook, and the beamforming weight selector selects an optimal beamforming weight based on a current channel state among the beamforming weights outputted from the window size decider, and feeds back the selected optimal beamforming weight to a transmitter.

    Abstract translation: 提供了使用码本及其接收和发送方法的闭环MIMO天线系统的接收机和发射机。 MIMO天线系统的接收机包括窗口大小决定器和波束成形权重选择器。 窗口尺寸判定器存储具有波束成形权重的码本,并且从码本中选择对应于窗口大小的波束成形权重,并且波束成形权重选择器基于从窗口大小决定器输出的波束形成权重中的当前信道状态来选择最优波束成形权重 并将所选择的最佳波束成形权重反馈给发射机。

    Apparatus and method for retransmitting data in a communication system
    92.
    发明申请
    Apparatus and method for retransmitting data in a communication system 审中-公开
    用于在通信系统中重传数据的装置和方法

    公开(公告)号:US20060182199A1

    公开(公告)日:2006-08-17

    申请号:US11355269

    申请日:2006-02-15

    Abstract: A communication system includes a transmitter and a receiver. If there is information data to transmit to the receiver, the transmitter generates a first transmission frame by signal-mapping the information data according to a first signal point mapping rule, and transmits the first transmission frame to the receiver. Upon receiving from the receiver a notification indicating a failure to normally receive the first transmission frame, the transmitter generates a second transmission frame by signal-mapping the information data according to a second signal point mapping rule preset such that a minimum squared Euclidean distance with the first transmission frame is maximized, and transmits the second frame to the receiver.

    Abstract translation: 通信系统包括发射机和接收机。 如果存在要发送到接收机的信息数据,则发射机通过根据第一信号点映射规则对信息数据进行信号映射来生成第一传输帧,并将第一传输帧发送到接收机。 从接收器接收到指示正常接收第一传输帧的通知的通知时,发射机通过根据预设的第二信号点映射规则对信息数据进行信号映射来生成第二传输帧,使得与所述第一传输帧的最小平方欧几里德距离 第一传输帧被最大化,并且将第二帧发送到接收机。

    Cell search apparatus and method in a mobile communication system using multiple access scheme
    93.
    发明申请
    Cell search apparatus and method in a mobile communication system using multiple access scheme 审中-公开
    移动通信系统中的小区搜索装置和方法,使用多址方案

    公开(公告)号:US20060126491A1

    公开(公告)日:2006-06-15

    申请号:US11231255

    申请日:2005-09-20

    CPC classification number: H04L27/2647 H04L27/261 H04L27/2655

    Abstract: A cell search apparatus and method in an OFDM mobile communication system are provided. In the cell search apparatus, a symbol synchronization acquirer acquires OFDM symbol synchronization by performing CP correlation for a plurality of OFDM symbol intervals. A frame cell synchronization acquirer sorts received OFDM symbols according to the acquired OFDM symbol synchronization, and acquires frame cell synchronization by performing preamble correlation for a plurality of frame cell intervals. A pilot pattern detector sorts received frame cells according to the acquired frame cell synchronization, and detects a pilot pattern for identifying a base station by monitoring a plurality of frame cells.

    Abstract translation: 提供了一种OFDM移动通信系统中的小区搜索装置和方法。 在小区搜索装置中,符号同步获取器通过对多个OFDM符号间隔执行CP相关来获取OFDM符号同步。 帧单元同步获取器根据获取的OFDM符号同步对接收到的OFDM符号进行分类,并且通过对多个帧单元间隔执行前导码相关来获取帧单元同步。 导频模式检测器根据所获取的帧单元同步对接收到的帧单元进行分类,并且通过监视多个帧单元来检测用于识别基站的导频模式。

    Mapping method for signal combining in a wireless communication system
    94.
    发明申请
    Mapping method for signal combining in a wireless communication system 审中-公开
    无线通信系统中信号组合的映射方法

    公开(公告)号:US20060120474A1

    公开(公告)日:2006-06-08

    申请号:US11295085

    申请日:2005-12-06

    Abstract: In a mapping method for signal combining in a wireless communication system, it is determined whether a full search is possible for an arbitrary mapping table. If the full search is possible, search metric values are computed for all possible constellation combinations and a constellation with a minimum value is produced using the computed search metric values. If the full search is not possible, a search metric value within an irregular constellation is continuously reduced, the reduced search metric value corresponding to a minimum value is obtained and a constellation with a minimum value is produced using the obtained reduced search metric value.

    Abstract translation: 在无线通信系统中的信号组合的映射方法中,确定是否可以进行任意映射表的全搜索。 如果全部搜索是可能的,则针对所有可能的星座组合计算搜索度量值,并且使用所计算的搜索度量值产生具有最小值的星座。 如果全搜索是不可能的,则不规则星座中的搜索度量值被连续减小,则获得对应于最小值的缩小搜索度量值,并且使用获得的缩小搜索度量值产生具有最小值的星座。

    METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE
    97.
    发明申请
    METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE 有权
    形成半导体器件电容器的方法

    公开(公告)号:US20060099769A1

    公开(公告)日:2006-05-11

    申请号:US11122834

    申请日:2005-05-05

    Applicant: Kwon Hong Deok Kil

    Inventor: Kwon Hong Deok Kil

    Abstract: Disclosed is a method for forming a capacitor of a semiconductor device, which can ensure charging capacity required as well as an excellent leakage current characteristic. In such a method, a storage electrode consisting of TiN is formed on a semiconductor substrate. Then, a first HfO2 thin film, an HfxAlyOz thin film and a second HfO2 thin film are successively deposited on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film. Finally, a plate electrode consisting of TiN is formed on the HfO2/HfxAlyOz/HfO2 dielectric film.

    Abstract translation: 公开了一种用于形成半导体器件的电容器的方法,其可以确保所需的充电容量以及优异的漏电流特性。 在这种方法中,在半导体衬底上形成由TiN组成的存储电极。 然后,使用原子层沉积(ALD)工艺在存储电极上依次沉积第一HfO 2薄膜,Hf x Al y O z薄膜和第二HfO 2薄膜,形成HfO 2 / Hf x Al y O z / HfO 2电介质薄膜。 最后,在HfO 2 / Hf x Al y O z / HfO 2电介质膜上形成由TiN组成的平板电极。

    Semiconductor memory device having a plug contacted to a capacitor electrode and method for fabricating the capacitor
    98.
    发明授权
    Semiconductor memory device having a plug contacted to a capacitor electrode and method for fabricating the capacitor 失效
    具有与电容器电极接触的插头的半导体存储器件及其制造方法

    公开(公告)号:US06734061B2

    公开(公告)日:2004-05-11

    申请号:US09888060

    申请日:2001-06-25

    CPC classification number: H01L28/60

    Abstract: The present invention provides a semiconductor memory device and a fabrication method capable of preventing the contact between a dielectric layer of a capacitor and a diffusion barrier. The plug comprises a diffusion barrier layer and a seed layer for forming a lower electrode of a capacitor. Accordingly, it is possible to prevent the dielectric layer being contacted with the diffusion barrier, whereby the leakage current may be reduced, and the capacitance of the capacitor may be increased.

    Abstract translation: 本发明提供一种能够防止电容器的电介质层和扩散阻挡层之间的接触的半导体存储器件和制造方法。 插塞包括用于形成电容器的下电极的扩散阻挡层和籽晶层。 因此,可以防止介电层与扩散阻挡层接触,从而可以减小漏电流,并且可以增加电容器的电容。

    Method for fabricating a capacitor in a semiconductor device
    99.
    发明授权
    Method for fabricating a capacitor in a semiconductor device 失效
    在半导体器件中制造电容器的方法

    公开(公告)号:US06383865B2

    公开(公告)日:2002-05-07

    申请号:US09886389

    申请日:2001-06-22

    CPC classification number: H01L28/91 H01L21/31111 H01L21/31116 H01L21/76804

    Abstract: A method for fabricating a capacitor of a semiconductor device, comprising the steps of forming a seed layer over a semiconductor substrate, and forming multiple oxide layers on the seed layer, wherein wet etching of the multiple oxide layers decreases as the layers go up. A first opening is formed by exposing the seed layer by selectively dry etching the multiple oxide layer. A second opening is formed by wet etching the lateral surface of the first opening where the width of the first opening is expanded, wherein the lower part of the second opening is larger than the upper part. A bottom electrode is formed on the seed layer exposed at the bottom of the second opening, whereby the bottom electrode has an identical shape with the second opening, and the bottom electrode is formed with the ECD (Electro-Chemical Deposition) technique. The seed layer is exposed by removing the multiple oxide layer and then the exposed seed layer is removed. A dielectric layer is formed on the bottom electrode and a top electrode is formed on the dielectric layer.

    Abstract translation: 一种制造半导体器件的电容器的方法,包括以下步骤:在半导体衬底上形成种子层,并在种子层上形成多个氧化物层,其中多层氧化物层的湿法蚀刻随着层的上升而减小。 通过选择性地干蚀刻多层氧化物层来暴露晶种层而形成第一开口。 通过湿式蚀刻第一开口的宽度扩大的第一开口的侧表面,其中第二开口的下部比上部大,形成第二开口。 在暴露在第二开口底部的种子层上形成底部电极,由此底部电极与第二个开口具有相同的形状,底部电极由ECD(电化学沉积)技术形成。 通过去除多个氧化物层来暴露种子层,然后去除暴露的种子层。 在底部电极上形成电介质层,并且在电介质层上形成顶部电极。

    Methods for fabricating high dielectric capacitors of semiconductor devices
    100.
    发明授权
    Methods for fabricating high dielectric capacitors of semiconductor devices 有权
    制造半导体器件的高介电电容器的方法

    公开(公告)号:US06218231B1

    公开(公告)日:2001-04-17

    申请号:US09221623

    申请日:1998-12-28

    Applicant: Kwon Hong

    Inventor: Kwon Hong

    CPC classification number: H01L28/75 H01L28/55

    Abstract: Provided is a method for fabricating a high dielectric capacitor of a semiconductor device without decreasing the properties of the dielectric under oxygen atmosphere in the process for depositing a high dielectric thin film at high temperature and the thermal treatment process for the crystallization of the dielectric. By using the hybrid electrode of the IrO2 film and the Pt or Ir film together with properties of diffusion barrier and bottom electrode, the present invention can enhance the thermal stability of the bottom electrode and, thus, fabricate a capacitor with excellent properties through stabilization of the processes for forming the high dielectric film.

    Abstract translation: 本发明提供一种在高温下沉积高电介质薄膜的过程中,在氧气氛下不降低电介质性能的半导体器件的高介电电容器的制造方法和电介质结晶的热处理工艺。 通过使用IrO 2膜的混合电极和Pt或Ir膜以及扩散阻挡层和底部电极的性质,本发明可以提高底部电极的热稳定性,从而通过稳定化来制造具有优异性能的电容器 形成高介电膜的工艺。

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