摘要:
Briefly, in accordance with one embodiment of the invention, an integrated circuit has a sense amp connected to a plurality of bit lines with bit line transistors. Each of the bit line transistors may be connected to a sense amp enable transistor so that together, the coupling and sense amp enable transistors connect the sense amp to a power supply voltage.
摘要:
A first plurality of registers are daisy chained together with each register associated with a particular cache line. Similarly, a second plurality of registers are daisy chained together with each register associated with a cache line. The first daisy chain defines a fill order of cache lines and the second daisy chain defines a lock order for the cache lines.
摘要:
In one embodiment, an array of content addressable memory (CAM) cells include a first plurality of CAM cells and a second plurality of CAM cells. The second plurality of CAM cells has a width sufficient to address a height of the array. A first plurality of CAM drivers are coupled to the array to drive the first plurality of CAM cells. The first plurality of CAM drivers prevent the first plurality of CAM cells from participating in a match when the array is in a test mode.
摘要:
A series stack including a first and a second MVSD transistor is coupled between a positive power supply and a pad. The series stack has a central node. A p-driver including a first and a second P-type transistor is coupled in series with a source of the first p-type transistor coupled to a positive power supply. The drain of the second p-type transistor is coupled to the central node.
摘要:
A read out circuit is provided. The read out circuit includes an emitter follower circuit (EFC) that receives information indicative of an intensity of light detected by a pixel of an active pixel sensor array. The EFC drives a value related to the information to a read out device when the pixel is accessed.
摘要:
An image sensor having a well-to-substrate diode as the photodetector. In a preferred embodiment, a modern salicided (CMOS) process is utilized to manufacture the image sensor. The field oxide region above the diode junction is transparent to visible light, thus allowing the photodiode competitive quantum efficiency as compared to devices having source/drain diffusion-to-substrate photodiodes fabricated on a non-salicided process. The photodiode can be integrated as part of a sensor array with digital circuitry using a relatively unmodified digital CMOS process. Furthermore, the structure allows the optical properties of the photodiode to be engineered by modifying the well without deleterious effects, to approximate a first order, on the characteristics of a FET built in another identical well.
摘要:
A highly reliable, large fan-in, high speed, BiCMOS circuit. The amount of MOS transistor parasitic capacitance appearing on the output line of the circuit is reduced by adding only emitter capacitance of bipolar transistors to the output line for each input to the basic logic circuit. Circuitry is provided to raise the base voltage of a reverse biased bipolar transistors to reduce or eliminate the reverse bias.
摘要:
A digital filter for a phase-locked loop operates to compare the bit values of the data represented by the incoming pulse stream with patterns in that pulse stream known to produce bit shifting (either early or late). The bit shift caused by physical interaction of bits encoded on computer diskettes or the like always is predictable, in accordance with the pattern of previous bits, the current bit and the next bit. This information is processed by a logic circuit to predict which pulses in the incoming stream of data pulses are shifted. A signal is produced each time a predicted shifted pulse is determined; and this signal is utilized in conjunction with the output of the phase difference counter in the digital phase-locked loop to permit the phase of the controlled oscillator to be adjusted at each unshifted bit in a normal manner, and compensated for adjustment in a modified manner as a result of the prediction of the shifted pulses.
摘要:
A memory system for rapidly choosing a stored item which most closely matches a given input is having a unique memory architecture capable of returning the item stored which most closely correlates to the input. The architecture represents a departure from previous digital content-addressable memories (CAM's) in that it is capable of returning the stored data which most closley resembles the input data rapidly. In addition, a measure of the quality of the selected (best matching) memory is generated. The architecture is capable of significant data throughput rates due to pipelining, and is amenable to implementation using conventional digital VLSI fabrication processes.
摘要:
This disclosure relates generally to radiation hardened digital circuits. In one embodiment, a radiation hardened digital circuit includes a delay network and a first Muller C element. The delay network is configured to generate a first delayed clock signal from a global clock signal such that that the first delayed clock signal is delayed with respect to the global clock signal. The first Muller C element is configured to generate a first clock input signal and set the first clock input signal to one of a set of clock states in response to the first delayed clock signal and the global clock signal each being provided in a same one of the set of clock states and is configured to hold the first clock input signal otherwise. Thus, a radiation strike is prevented from causing a soft error in the first clock input signal.