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公开(公告)号：US20090146239A1
公开(公告)日：2009-06-11
申请号：US11950795
申请日：2007-12-05
IPC分类号： H01L23/482 , H01L21/00
CPC分类号： H01L27/1446 , H01L31/022408 , H01L31/085
摘要： A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.
摘要翻译： 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底，形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指，并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里，不透明电极的宽度被设定为小于透明电极的宽度。
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公开(公告)号：US20090146178A1
公开(公告)日：2009-06-11
申请号：US11950700
申请日：2007-12-05
IPC分类号： H01L31/0224
CPC分类号： H01L31/022408 , H01L31/105 , H01L31/1085
摘要： A photodiode in which increased sensitivity and speed are balanced. The photodiode includes: a semiconductor substrate; a plurality of active regions formed on the substrate by selective epitaxial growth; and a comb electrode provided for each of the plurality of active regions and in communication with each other to electrically connect the active regions together.
摘要翻译： 光敏二极管的灵敏度和速度均衡。 光电二极管包括：半导体衬底; 通过选择性外延生长在衬底上形成的多个有源区; 以及为多个有源区域中的每一个设置并彼此连通以将活性区域电连接在一起的梳状电极。
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93.发明授权Ultra-high-Q surface-tension-induced monolithically integrated on-chip resonator and associated devices 有权超高Q表面张力感应单片集成片上谐振器及相关器件公开(公告)号：US07415058B2
公开(公告)日：2008-08-19
申请号：US11543334
申请日：2006-10-05
IPC分类号： H01S3/08
CPC分类号： G02B6/13 , G02B6/122 , H01S3/0604 , H01S3/0627 , H01S3/063 , H01S3/08 , H01S3/083 , H01S3/171 , H01S5/1032
摘要： A resonator structure includes a substrate and a cladding layer formed on the substrate. A plurality of lens-shaped optical structures is formed on the cladding layer. The lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of the resonator structure and increase substantially its Q factor.
摘要翻译： 谐振器结构包括在基板上形成的基板和包覆层。 在包覆层上形成多个透镜状的光学结构体。 透镜状光学结构包括暴露于回流工艺的光亮胶体玻璃，以使谐振器结构的表面光滑，并且基本上增加其Q因子。
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公开(公告)号：US07336684B2
公开(公告)日：2008-02-26
申请号：US10902612
申请日：2004-07-29
CPC分类号： H01S3/0632 , H01S3/005 , H01S3/0637 , H01S3/083 , H01S3/094 , H01S3/094061 , H01S3/0941 , H01S3/1608 , H01S3/2383 , H01S3/2391
摘要： A microphotonic light source includes an optical pump and a plurality of waveguides that distribute optical pump power of the optical pump. At least one Erbium-doped laser ring is coupled to at least one of the waveguides so as to match the resonance condition of the optical pump.
摘要翻译： 微电子光源包括光泵和分配光泵的光泵功率的多个波导。 至少一个铒掺杂激光环耦合到至少一个波导，以便匹配光泵的共振条件。
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公开(公告)号：US20070274642A1
公开(公告)日：2007-11-29
申请号：US11730173
申请日：2007-03-29
申请人： Takayoshi Inujima , Mikihiko Kato , Satoshi Takahashi , Yukiya Miyachi , Lionel C. Kimerling , Jurgen Michel , Dong Pan , Wojciech P. Giziewicz
发明人： Takayoshi Inujima , Mikihiko Kato , Satoshi Takahashi , Yukiya Miyachi , Lionel C. Kimerling , Jurgen Michel , Dong Pan , Wojciech P. Giziewicz
IPC分类号： G02B6/36
CPC分类号： G02B6/4202 , G02B6/02033
摘要： A high-speed optical transmission system includes an optical fiber for transmitting light and an optical receiver for receiving light transmitted from the optical fiber. The optical fiber is a plastic optical fiber (POF), and the optical receiver has a lateral pin structure.
摘要翻译： 高速光传输系统包括用于发射光的光纤和用于接收从光纤传输的光的光接收器。 光纤是塑料光纤（POF），光接收器具有横向引脚结构。
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公开(公告)号：US07146074B2
公开(公告)日：2006-12-05
申请号：US10867949
申请日：2004-06-14
申请人： Jun-Fei Zheng , Kazumi Wada , Jurgen Michel , Donghwan Ahn , Lionel C. Kimerling
发明人： Jun-Fei Zheng , Kazumi Wada , Jurgen Michel , Donghwan Ahn , Lionel C. Kimerling
IPC分类号： G02B6/34
摘要： An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.
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公开(公告)号：US07065271B2
公开(公告)日：2006-06-20
申请号：US10280159
申请日：2002-10-25
申请人： Jun-Fei Zheng , Kazumi Wada , Jurgen Michel , Donghwan Ahn , Lionel C. Kimerling
发明人： Jun-Fei Zheng , Kazumi Wada , Jurgen Michel , Donghwan Ahn , Lionel C. Kimerling
IPC分类号： G02B6/34
摘要： An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.
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公开(公告)号：US07043120B2
公开(公告)日：2006-05-09
申请号：US10285865
申请日：2002-11-01
IPC分类号： G02B6/34
CPC分类号： G02B6/12019 , G02B6/12007 , G02B6/2813 , G02B2006/12109 , G02B2006/12164
摘要： An array waveguide grating structure includes an input MMI that receives an input optical signal and splits the optical signal into a plurality of signals, each having a defined wavelength. A plurality of input arrayed waveguide structures receive the plurality of signals such that each of the waveguide structures receives one of the plurality of signals. The input MMI, the plurality of arrayed waveguide structures, and the output waveguide are configured using HIC optics.
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公开(公告)号：US06832027B2
公开(公告)日：2004-12-14
申请号：US10323355
申请日：2002-12-18
IPC分类号： G02B634
CPC分类号： G02B6/29338 , G02B6/12019 , G02B6/29386 , G02B2006/12159 , H04J14/02
摘要： A system includes a plurality of AWGs, wherein one of the AWGs receives an input signal. The AWGS are divided amongst a first selective group of the AWGs providing even-numbered channel outputs associated with an even-numbered selection of the input signal, and a second selective group of the AWGs providing odd-numbered channel outputs associated with an odd-numbered selection of the input signal. An interleaver arrangement includes a plurality of ring structures so as to provide appropriate filtering characteristics for the even-numbered channel outputs and odd-numbered channel outputs.
摘要翻译： 一种系统包括多个AWG，其中一个AWG接收输入信号。 AWGS被划分为提供与输入信号的偶数选择相关联的偶数频道输出的AWG的第一选择组，以及提供与奇数编号的奇数编号的奇数编号的频道输出相关联的AWG的第二选择组 选择输入信号。 交织器装置包括多个环形结构，以便为偶数频道输出和奇数号频道输出提供适当的滤波特性。
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公开(公告)号：US06743974B2
公开(公告)日：2004-06-01
申请号：US10140640
申请日：2002-05-08
申请人： Kazumi Wada , Lionel C. Kimerling
发明人： Kazumi Wada , Lionel C. Kimerling
IPC分类号： H01L3106
CPC分类号： H01L31/0687 , H01L31/03685 , H01L31/078 , Y02E10/544 , Y02E10/545 , Y02E10/548
摘要： A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Preferably, the silicon solar cell comprises a p++ type silicon layer; an intrinsic silicon layer formed on the p++ type silicon layer; an n++ type silicon layer formed on the intrinsic type silicon layer; and a p-type silicon layer formed on the n++ type silicon layer. The germanium solar cell preferably comprises an n-type germanium layer; and a p-type germanium layer form on the n-type germanium layer. The p-type germanium layer is coupled to the p++ type silicon layer.
摘要翻译： 一种多结太阳能电池，包括形成在硅太阳能电池的背面上的锗太阳能电池的硅太阳能电池。 硅太阳能电池和锗太阳能电池通过p-p接头直接耦合以钝化界面位错。 优选地，硅太阳能电池包括p ++型硅层; 形成在p ++型硅层上的本征硅层; 形成在本征型硅层上的n ++型硅层; 以及形成在n ++型硅层上的p型硅层。 锗太阳能电池优选包括n型锗层; 和在n型锗层上形成p型锗层。 p型锗层与p ++型硅层耦合。
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