QUANTUM DOT CONTAINING OPTICAL ELEMENT
    91.
    发明申请
    QUANTUM DOT CONTAINING OPTICAL ELEMENT 审中-公开
    量子包含光学元件

    公开(公告)号:US20130277643A1

    公开(公告)日:2013-10-24

    申请号:US13924262

    申请日:2013-06-21

    Abstract: An illumination device including a light source positioned at the distal end of a reflecting unit and a heat sink light transmissive substrate including quantum dots positioned at the proximal end of the reflecting unit with the reflecting unit having one or more reflecting side walls and a reflecting bottom wall and with the light source being separated a distance from the light transmissive substrate including quantum dots. In certain embodiments, the light source is an LED.

    Abstract translation: 一种照明装置,包括位于反射单元的远端处的光源和包括位于反射单元的近端处的量子点的散热光透射基板,反射单元具有一个或多个反射侧壁和反射底部 并且光源与包括量子点的透光基板分开一段距离。 在某些实施例中,光源是LED。

    SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION
    92.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION 有权
    半导体纳米晶体及其制备方法

    公开(公告)号:US20130273247A1

    公开(公告)日:2013-10-17

    申请号:US13913108

    申请日:2013-06-07

    Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed. In certain embodiments, a semiconductor nanocrystal includes one or more Group IIIA and one or more Group VA elements.

    Abstract translation: 公开了制备半导体纳米晶体的方法。 该方法包括将包含一种或多种阳离子前体,一种或多种阴离子前体和一种或多种胺的前体混合物加入到包含一种或多种酸,一种或多种酚化合物和溶剂的配体混合物中以形成反应混合物, 其中(一种或多种酚化合物加上一种或多种酸加一种或多种胺化合物)与初始包含在反应混合物中的一种或多种阳离子的摩尔比大于或等于约6,并加热 反应混合物在足以产生具有预定组成的半导体纳米晶体的温度和一段时间内。 还公开了在其上形成缓冲层和/或外涂层的方法。 还公开了包括本发明的半导体纳米晶体的半导体纳米晶体和组合物。 在某些实施方案中,半导体纳米晶体包括一种或多种IIIA族和一种或多种VA族元素。

    Blue Emitting Semiconductor Nanocrystals And Compositions And Devices Including Same
    93.
    发明申请
    Blue Emitting Semiconductor Nanocrystals And Compositions And Devices Including Same 有权
    蓝色发射半导体纳米晶体及其组成和器件包括相同

    公开(公告)号:US20130234109A1

    公开(公告)日:2013-09-12

    申请号:US13849676

    申请日:2013-03-25

    Abstract: A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation.

    Abstract translation: 激发后能够发出蓝光的半导体纳米晶体。 还公开了半导体纳米晶体的器件,群体,以及包括在激发时能够发射蓝光的半导体纳米晶体的组合物。 在一个实施方案中,能够发射包括波长不大于约470nm的最大峰值发射的蓝光的半导体纳米晶体,其光致发光量子效率在激发时大于约65%。 在另一个实施例中,半导体纳米晶体包括芯,其包含包含至少三个化学元素的第一半导体材料和设置在芯的至少一部分上的壳,壳包括第二半导体材料,其中半导体纳米晶体能够发射 激发后光致发光量子效率大于约65%的蓝光。 在另一实施例中,半导体纳米晶体包括芯,其包括包含至少三个化学元件的第一半导体材料和设置在芯的至少一部分上的外壳,壳包括包含至少三个化学元素的第二半导体材料,其中 半导体纳米晶体在激发时能够发射包括光谱的蓝色区域中的最大峰值发射的光。

    NANOCRYSTALS INCLUDING A GROUP IIIA ELEMENT AND A GROUP VA ELEMENT, METHOD, COMPOSITION, DEVICE AND OTHER PRODUCTS
    94.
    发明申请
    NANOCRYSTALS INCLUDING A GROUP IIIA ELEMENT AND A GROUP VA ELEMENT, METHOD, COMPOSITION, DEVICE AND OTHER PRODUCTS 有权
    纳米晶体包括IIIA类元素和一组VA元素,方法,组合物,器件和其他产品

    公开(公告)号:US20130193407A1

    公开(公告)日:2013-08-01

    申请号:US13740379

    申请日:2013-01-14

    Abstract: A population of nanocrystals including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material comprising at least three chemical elements and obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. Devices including nanocrystals are disclosed.

    Abstract translation: 包括核心的纳米晶体群包括包含元素周期表第IIIA族元素的一种或多种元素的第一半导体材料和元素周期表第VA族元素的一种或多种元素的核心,以及设置在至少一部分上的壳 所述壳体包括第二半导体材料,其中所述纳米晶体在激发时能够发射具有至少约30%的光致发光量子效率的光。 还公开了纳米晶体,其包含纳米晶核和壳,其包含半导体材料,所述半导体材料包含至少三种化学元素,并且可通过包括将半导体材料的至少一种化学元素的前体从单独的源添加到纳米晶体 同时为半导体材料的其它化学元素添加量的前体。 公开了包括纳米晶体的器件。

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