公开(公告)号：US12112869B2

公开(公告)日：2024-10-08

申请号：US17773720

申请日：2020-10-29

Applicant: ROHM CO., LTD.

Inventor： Soichi Sakakibara ,  Takanori Shinoura ,  Wataru Imahashi

IPC: H01C1/14 ,  H01C3/08 ,  H05K1/18

CPC classification number: H01C1/14 ,  H01C3/08 ,  H05K1/181 ,  H05K2201/10022

Abstract: A chip resistor includes a substrate, an upper electrode and a resistor body, a back electrode, a side electrode, and a metal plating layer. The substrate includes an upper surface, a back surface that intersect a thickness-wise direction and a side surface that joins the upper surface and the back surface. The upper electrode and the resistor body are formed on the upper surface. The back electrode is formed on the back surface. The side electrode is formed on the side surface. The metal plating layer includes a back plating layer and a side plating layer. The back plating layer covers at least a portion of the back electrode. The side plating layer covers at least a portion of the side electrode. The metal plating layer has a thickness that is greater than or equal to 10 μm and less than or equal to 60 μm.

公开(公告)号：US20240333280A1

公开(公告)日：2024-10-03

申请号：US18616703

申请日：2024-03-26

Applicant: ROHM CO., LTD.

Inventor： Suzunosuke KIMURA ,  Kosuke YASUJI ,  Hiroki SUGAMOTO

IPC: H03K17/30 ,  H02M3/07 ,  H03K17/041

CPC classification number: H03K17/302 ,  H02M3/07 ,  H03K17/04106 ,  H03K2217/0063 ,  H03K2217/0072

Abstract: The present disclosure provides a motor driver circuit. The motor driver circuit includes a high-side driver that drives a high-side transistor according to a control signal. The high-side driver includes a voltage monitoring circuit, a timer circuit and a charge pump circuit. The voltage monitoring circuit asserts a detection signal when a detection voltage of the high-side transistor becomes lower than a threshold value. The timer circuit starts measuring a predetermined time in response to the control signal changing to an on state that the high side transistor is instructed to turn on, or in response to an assertion of the detection signal when the control signal is in the on state. The charge pump circuit is active while the timer circuit measures the predetermined time, generates a boosted voltage in response to a clock signal and supplies the boosted voltage to a gate of the high-side transistor.

公开(公告)号：US20240333162A1

公开(公告)日：2024-10-03

申请号：US18743485

申请日：2024-06-14

Applicant: ROHM CO., LTD.

Inventor： Akira AOKI ,  Ryo TAKAGI

IPC: H02M3/158 ,  H02M1/00 ,  H05B45/305 ,  H05B45/375 ,  H05B45/38

CPC classification number: H02M3/1588 ,  H05B45/305 ,  H05B45/375 ,  H05B45/38 ,  H02M1/0006 ,  H02M1/0009

Abstract: This light-emitting element drive control device (100) comprises: a drive logic unit (113) which performs a drive control of a switch output stage (N1, D1, L1) for dropping an input voltage (VIN) to an output voltage (VOUT) and supplying a light-emitting element therewith; a charge-pump power supply unit (α) which generates a step-up voltage (CP) higher than the input voltage (VIN); and a current detecting comparator (114) which receives a supply of the step-up voltage (CP) and the output voltage (VOUT) as power supply voltages, and generates control signals (SET, RST) for the drive logic unit (113) by directly comparing a current detection signal (Vsns) corresponding to an inductor current (IL) of the switch output stage with a peak detection value (Vsns_pk) and a bottom detection value (Vsns_bt).

公开(公告)号：US20240333136A1

公开(公告)日：2024-10-03

申请号：US18611832

申请日：2024-03-21

Applicant: ROHM Co., LTD.

Inventor： Tomoaki Morita

IPC: H02M1/32 ,  H02M1/00 ,  H02M3/158

CPC classification number: H02M1/32 ,  H02M1/0006 ,  H02M3/158 ,  H02M1/0009

Abstract: Provided is a current limiting circuit for limiting an upper limit of an output current to a predetermined value, the current limiting circuit including a current monitor circuit that outputs a monitor voltage according to a first current generated by a first voltage and supplied to an output terminal and an auxiliary power supply circuit to which a second voltage higher than the first voltage is supplied and which supplies a second current to the output terminal to suppress an increase in the first current when the first current exceeds a threshold current, based on the monitor voltage.

公开(公告)号：US20240332289A1

公开(公告)日：2024-10-03

申请号：US18618485

申请日：2024-03-27

Applicant: ROHM CO., LTD.

Inventor： Tatsuro SHIMIZU

IPC: H01L27/06 ,  G01R19/165

CPC classification number: H01L27/0682 ,  G01R19/16504

Abstract: The present disclosure provides a semiconductor integrated circuit. The semiconductor integrated circuit includes a set pin. An external resistor and an external capacitor are connected in parallel between the set pin and an external fixed voltage line. A parameter acquisition circuit is connected to the set pin to obtain a first parameter and a second parameter defined by a resistive value of the external resistor and a capacitive value of the external capacitor.

公开(公告)号：US20240332271A1

公开(公告)日：2024-10-03

申请号：US18742606

申请日：2024-06-13

Applicant: ROHM CO., LTD.

Inventor： Hiroto SAKAI ,  Yuta OKAWAUCHI ,  Tetsuo TATEISHI

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/049 ,  H01L23/31 ,  H01L23/367 ,  H01L23/373 ,  H01L25/07

CPC classification number: H01L25/16 ,  H01L23/049 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3735 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2924/10272 ,  H01L2924/1207 ,  H01L2924/13091 ,  H01L2924/30101 ,  H01L2924/30107

Abstract: A semiconductor device includes two semiconductor elements with a respective switching operation being controlled depending on a first driving signal input to a third electrode. A first conductor and a second conductor are electrically interposed between the third electrodes of the two semiconductor elements. The first conductor is electrically connected to a signal terminal. The electrical connection between the third electrodes of the two semiconductor elements includes a first conduction path through the first conductor and a second conduction path through the second conductor. An inductance value of the second conduction path is smaller than an inductance value of the first conduction path. A resistance value of the second conduction path is larger than a resistance value of the first conduction path.

公开(公告)号：US20240332226A1

公开(公告)日：2024-10-03

申请号：US18739921

申请日：2024-06-11

Applicant: ROHM CO., LTD.

Inventor： Yosuke NISHIDA ,  Kazuisao TSURUDA

IPC: H01L23/66 ,  H01P3/127 ,  H01Q5/22

CPC classification number: H01L23/66 ,  H01P3/127 ,  H01Q5/22 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6677

Abstract: A semiconductor device includes a semiconductor element, a base and a first waveguide. The semiconductor element oscillates and radiates electromagnetic waves. The base includes a retaining cavity that retains the semiconductor element. The first waveguide includes a first waveguide passage connected to the retaining cavity. The first waveguide passage is configured to transmit the electromagnetic waves in a fundamental mode. The retaining cavity is a resonant cavity in which the electromagnetic waves resonate in a high-order mode.

公开(公告)号：US20240332171A1

公开(公告)日：2024-10-03

申请号：US18614921

申请日：2024-03-25

Applicant: ROHM CO., LTD.

Inventor： Keiji WADA

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/495 ,  H01L25/065

CPC classification number: H01L23/5227 ,  H01L23/4951 ,  H01L23/49575 ,  H01L24/08 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/08245 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2924/0665 ,  H01L2924/182

Abstract: An insulation chip includes a first unit, and a second unit bonded to the first unit and smaller in size than the first unit in a plan view. The first unit includes a first element insulating layer, a first insulating element buried in the first element insulating layer, and a first electrode pad provided on the first element insulating layer. The second unit includes a second element insulating layer, and a second insulating element buried in the second element insulating layer. In a unit bonding state in which the second unit is bonded to the first unit, the first and second insulating elements are arranged to face each other in a thickness direction of the first element insulating layer, and the first electrode pad is provided at a different position from the second unit in a plan view.

公开(公告)号：US20240331773A1

公开(公告)日：2024-10-03

申请号：US18741064

申请日：2024-06-12

Applicant: ROHM CO., LTD.

Inventor： Takashige HAMA ,  Kazuhisa UKAI

IPC: G11C16/04 ,  G11C16/28 ,  H10B41/35

CPC classification number: G11C16/0483 ,  G11C16/28 ,  H10B41/35

Abstract: Provided is a memory circuit that is provided to an IC chip, the memory circuit including: a complementary cell which includes a first memory cell that includes a first memory transistor, and a second memory cell that includes a second memory transistor; a reference cell which includes a reference transistor; a first terminal which is connectable to a gate of the first memory transistor and a gate of the second memory transistor, and to which a first power-supply voltage can be applied; a second terminal which is connectable to a gate of the reference transistor, and to which a second power-supply voltage can be applied; and a detection unit which detects a magnitude relationship between current that flows through the first memory cell or the second memory cell, and current that flows through the reference cell.

公开(公告)号：US20240329240A1

公开(公告)日：2024-10-03

申请号：US18617568

申请日：2024-03-26

Applicant: ROHM CO., LTD.

Inventor： SHOGO TAKAMURA ,  HIDEKI MATSUBARA ,  TAKAHIRO TSUBOI

IPC: G01S15/08 ,  G01S15/931

CPC classification number: G01S15/08 ,  G01S15/931

Abstract: The present disclosure provides a signal processing device. The signal processing device includes: a transmission signal generation unit, configured to generate a transmission signal for a transmitted wave of sound wave; a reception signal output unit, configured to output a received signal based on a received wave of sound wave; and a reflected wave detection unit. The reflected wave detection unit is configured to detect a first reflected wave of the transmitted wave that may be included in the received wave based on a first timing when an envelope detection signal, which is a signal obtained by envelope detection of an absolute value of the received signal during a reverberation period in which a reverberation of the transmitted wave remains, is lower than a first threshold value.