公开(公告)号：US12205622B2

公开(公告)日：2025-01-21

申请号：US18235995

申请日：2023-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L27/12 ,  G11C11/405 ,  G11C16/04 ,  H01L27/118 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H01L21/822 ,  H01L27/06 ,  H01L29/78 ,  H10B12/00

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US12204212B2

公开(公告)日：2025-01-21

申请号：US18599770

申请日：2024-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Naoto Kusumoto

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

Abstract: A display apparatus having an excellent boosting function is provided. The display apparatus is provided with a pixel having a function of adding data (a boosting function). A capacitor for boosting voltage is provided in the pixel, and data is added by capacitive coupling to be supplied to a display device. The capacitor for boosting voltage and a capacitor for retaining data are placed on top of each other, whereby the capacitance value of the capacitor for boosting voltage can be increased. Thus, the pixel can have an excellent boosting function, without significantly losing the aperture ratio or definition.

公开(公告)号：US20250024737A1

公开(公告)日：2025-01-16

申请号：US18712749

申请日：2022-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryo HATSUMI ,  Hisao IKEDA ,  Daiki NAKAMURA ,  Takeya HIROSE ,  Yosuke TSUKAMOTO

IPC: H10K59/80 ,  G02B27/01 ,  G09G3/3275 ,  H10K59/65

Abstract: An electronic device with low power consumption is provided. The electronic device includes a first pixel portion and a second pixel portion. A plurality of first pixels are arranged in the first pixel portion. The second pixel portion includes a first region where a plurality of second pixels are arranged and a second region where a plurality of third pixels are arranged. The second region is provided to surround the first region. The first pixel includes a first light-emitting element, the second pixel includes a light-receiving element, and the third pixel includes a second light-emitting element. The area occupied by one of the first pixels is smaller than the area occupied by one of the third pixels.

公开(公告)号：US20250023362A1

公开(公告)日：2025-01-16

申请号：US18711808

申请日：2022-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi OSADA ,  Tetsuya KAKEHATA ,  Yosuke TSUKAMOTO ,  Shigeru ONOYA ,  Noboru INOUE ,  Shunpei YAMAZAKI

IPC: H02J7/00 ,  B60R25/045 ,  B62J43/13 ,  B62J43/16 ,  H04L9/40 ,  H04W12/06

Abstract: An electric vehicle and a system that easily recognize theft of a secondary battery of an electric vehicle typified by an electrically assisted bicycle and prevent the theft are provided. To prevent the theft of a secondary battery that can be detached from an electric vehicle typified by an electrically assisted bicycle or an electric motorcycle, mutual authentication between an electric vehicle body unit and a secondary battery unit is performed. The secondary battery unit at least includes a first memory portion storing first identification information, an authentication portion, and a wireless communication portion.

公开(公告)号：US20250020960A1

公开(公告)日：2025-01-16

申请号：US18896991

申请日：2024-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Makoto KANEYASU

IPC: G02F1/1343 ,  G02F1/13357 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786

Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided. The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

公开(公告)号：US12199122B2

公开(公告)日：2025-01-14

申请号：US18105005

申请日：2023-02-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya Onuki ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Hajime Kimura ,  Shunpei Yamazaki

IPC: H01L27/146 ,  H01L21/822 ,  H01L27/12 ,  H01L29/786 ,  H04N25/771 ,  H04N25/772 ,  H10B12/00

Abstract: An imaging device which has a stacked-layer structure and can be manufactured easily is provided. The imaging device includes a signal processing circuit, a memory device, and an image sensor. The imaging device has a stacked-layer structure in which the memory device is provided above the signal processing circuit, and the image sensor is provided above the memory device. The signal processing circuit includes a transistor formed on a first semiconductor substrate, the memory device includes a transistor including a metal oxide in a channel formation region, and the image sensor includes a transistor formed on a second semiconductor substrate.

公开(公告)号：US12199106B2

公开(公告)日：2025-01-14

申请号：US18197785

申请日：2023-05-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kouhei Toyotaka ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G11C19/00 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/36 ,  G11C19/28 ,  H01L27/12 ,  H01L29/786 ,  G09G3/3266 ,  G09G3/3275

Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

公开(公告)号：US12198941B2

公开(公告)日：2025-01-14

申请号：US18434977

申请日：2024-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US20250017050A1

公开(公告)日：2025-01-09

申请号：US18709968

申请日：2022-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro KATAYAMA ,  Naoto GOTO ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K50/13 ,  H10K59/80

Abstract: A display device in which crosstalk is inhibited is provided. The display device includes a first insulating layer including a first region and a second region having a lower top surface level than the first region, a second insulating layer including a region overlapping with the first region, a light-emitting device including a region overlapping with the first region with the second insulating layer therebetween, a stack including a region overlapping with the second region, and a third insulating layer including a region overlapping with the stack; the second insulating layer includes a protruding portion overlapping with the second region; the light-emitting device includes at least a light-emitting layer, a first upper electrode over the light-emitting layer, and a second upper electrode over the first upper electrode; the second upper electrode includes a region overlapping with the third insulating layer; and the stack contains the same material as the light-emitting layer.

公开(公告)号：US20250017036A1

公开(公告)日：2025-01-09

申请号：US18757107

申请日：2024-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiki SASAKI ,  Nobuharu OHSAWA ,  Hiromi SEO ,  Shinya FUKUZAKI

IPC: H10K50/13 ,  H10K71/20

Abstract: A light-emitting device that can be used in a high-resolution display apparatus and has a low driving voltage and high current efficiency is provided. A tandem light-emitting device is fabricated through a photolithography process and includes a plurality of light-emitting units and an intermediate layer therebetween. The intermediate layer includes a layer that includes a metal oxide and an organic compound having a phenanthroline ring with an electron-donating group. The layer of the intermediate layer is in contact with a light-emitting unit on the anode side.