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267 条记录 (耗时 0.023 秒)

    Thermal electron emission backlight device
    91.
    发明授权
    Thermal electron emission backlight device 失效
    热电子发射背光装置

    公开(公告)号：US07432646B2

    公开(公告)日：2008-10-07

    申请号：US11432533

    申请日：2006-05-12

    申请人： Jun-Hee Choi ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Andrei Zoulkarneev ,  Chan-Wook Baik ,  Ha-Jong Kim ,  Moon-Jin Shin ,  Ho-Suk Kang

    发明人： Jun-Hee Choi ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Andrei Zoulkarneev ,  Chan-Wook Baik ,  Ha-Jong Kim ,  Moon-Jin Shin ,  Ho-Suk Kang

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01J63/02 ,  H01J63/04

    摘要： A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

    摘要翻译： 热电子发射背光装置包括：第一基板和第二基板，彼此平行设置并隔开预定的距离; 第一阳极电极和面对第一阳极电极的第二阳极电极，第一阳极电极和第二阳极电极分别形成在第一基板和第二基板的内表面上; 在第一基板和第二基板之间以预定间隔布置并且彼此平行的阴极; 形成在所述第二阳极电极上的荧光体层; 以及设置在第一基板和第二基板之间的多个间隔件，以便保持它们之间的预定距离。 当向阴极施加预定电压时，从阴极发射热电子。

    FLASH MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    94.
    发明申请
    FLASH MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    闪存存储器件及其制造方法

    公开(公告)号：US20080123433A1

    公开(公告)日：2008-05-29

    申请号：US11946721

    申请日：2007-11-28

    申请人： Suk-Kang SUNG ,  Choong-Ho LEE ,  Kyu-Charn PARK ,  Byung-Yong CHOI

    发明人： Suk-Kang SUNG ,  Choong-Ho LEE ,  Kyu-Charn PARK ,  Byung-Yong CHOI

    IPC分类号： G11C11/34

    CPC分类号： H01L27/115 ,  G11C16/3418 ,  G11C16/3427 ,  H01L27/11521 ,  H01L27/11524

    摘要： A flash memory device is disclosed. The flash memory device includes a substrate, a memory cell transistor and a selection transistor. The substrate has a first region where the memory cell transistor is to be formed and a second region where the selection transistor is to be formed. The first region has an upper surface located within a first plane and the second region has an upper surface located within a second plane different from the first plane. The memory cell transistors may have a Fin-FET structure. The flash memory device may prevent a disturbance phenomenon in which an electron-hole pair infiltrates the memory cell transistor caused by a high integration degree of the flash memory device.

    摘要翻译： 公开了一种闪存器件。 闪存器件包括衬底，存储单元晶体管和选择晶体管。 衬底具有要形成存储单元晶体管的第一区域和要形成选择晶体管的第二区域。 第一区域具有位于第一平面内的上表面，而第二区域具有位于不同于第一平面的第二平面内的上表面。 存储单元晶体管可以具有Fin-FET结构。 闪速存储器件可以防止由闪存器件的高集成度引起的电子 - 空穴对侵入存储单元晶体管的干扰现象。

    Method of assigning audio channel identification, method for selecting audio channel using the same, and optical recording and reproducing apparatus suitable therefor
    96.
    发明授权
    Method of assigning audio channel identification, method for selecting audio channel using the same, and optical recording and reproducing apparatus suitable therefor 失效
    分配音频信道识别的方法，使用其的音频信道的选择方法以及适用于其的光学记录和再现装置

    公开(公告)号：US07231268B1

    公开(公告)日：2007-06-12

    申请号：US09504893

    申请日：2000-02-16

    申请人： Seong-jin Moon ,  Young-nam Oh ,  Tae-yun Chung ,  Jung-suk Kang ,  Pan-gie Park ,  Bong-kil Park

    发明人： Seong-jin Moon ,  Young-nam Oh ,  Tae-yun Chung ,  Jung-suk Kang ,  Pan-gie Park ,  Bong-kil Park

    IPC分类号： G06F17/00

    CPC分类号： G11B27/105 ,  G11B20/10 ,  G11B2020/10592 ,  G11B2020/10601

    摘要： A method of assigning a channel identification (ID) of an audio signal by which it is possible to follow up and select the audio channel selected by a user even though a program or an audio data stream is changed in an audio/video (A/V) device for reproducing a program including a plurality of audio data streams, a method of selecting audio channels using the same, and an apparatus suitable therefor. The method of selecting the audio channels of an A/V data stream including a plurality of programs, each program including at least two kinds of audio data streams, each audio data stream including at least two sub-audio data streams which are not repeated and having a series of IDs according to a predetermined order of precedence, the method including (a) when a program is changed to another program, searching whether there is a sub-audio data stream having a channel ID which is the same as the channel ID assigned to the sub-audio data stream of the program which was being reproduced before the program was changed, in the changed program, and (b) when it is determined that there is the sub-audio data stream having a channel ID which is the same as the channel ID assigned to the sub-audio data stream of the program which was being reproduced before the program was changed in the step (a), selecting the sub-audio data stream. According to the method of selecting the audio channels, it is possible to follow up a voice mode selected by a user (maintain the previously selected audio channel) although a program or an audio data stream is changed.

    摘要翻译： 一种分配音频信号的信道标识（ID）的方法，通过该信道标识（ID）可以跟踪并选择由用户选择的音频信道，即使音频/视频中的节目或音频数据流被改变（A / V）装置，用于再现包括多个音频数据流的节目，选择使用该音频数据流的音频频道的方法，以及适用于其的装置。 选择包括多个节目的A / V数据流的音频信道的方法，每个节目包括至少两种音频数据流，每个音频数据流包括不重复的至少两个子音频数据流，以及 具有根据预定优先顺序的一系列ID，所述方法包括（a）当程序改变为另一程序时，搜索是否存在具有与频道ID相同的频道ID的子音频数据流 在改变的节目中被分配给正在再现的节目的子音频数据流，以及（b）当确定存在具有频道ID的子音频数据流时， 与在步骤（a）中在程序改变之前正在再现的节目的子音频数据流分配的频道ID相同，选择子音频数据流。 根据选择音频通道的方法，尽管程序或音频数据流被改变，仍然可以追踪用户选择的语音模式（保持先前选择的音频通道）。

    Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
    98.
    发明申请
    Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions 有权
    制造具有对应于一对鳍型沟道区的单个栅电极的半导体器件的方法

    公开(公告)号：US20070048934A1

    公开(公告)日：2007-03-01

    申请号：US11505335

    申请日：2006-08-17

    申请人： Suk-Pil Kim ,  Yoon-Dong Park ,  Won-Joo Kim ,  Dong-Gun Park ,  Eun-Suk Cho ,  Suk-Kang Sung ,  Byung-Yong Choi ,  Tae-Yong Kim ,  Choong-Ho Lee

    发明人： Suk-Pil Kim ,  Yoon-Dong Park ,  Won-Joo Kim ,  Dong-Gun Park ,  Eun-Suk Cho ,  Suk-Kang Sung ,  Byung-Yong Choi ,  Tae-Yong Kim ,  Choong-Ho Lee

    IPC分类号： H01L21/8242

    CPC分类号： H01L29/785 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/10879 ,  H01L27/1159 ,  H01L27/2436 ,  H01L29/66795

    摘要： Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

    摘要翻译： 提供了制造具有提供体偏置控制的鳍式FET结构的半导体器件的方法，显示出与SOI结构相关的一些特征优点，提供增加的工作电流和/或降低的接触电阻。 制造半导体器件的方法包括在第一绝缘膜的突出部分的侧壁上形成绝缘间隔物; 通过使用绝缘间隔物作为蚀刻掩模去除半导体衬底的暴露区域，从而形成与第一绝缘膜接触并由第一绝缘膜支撑的鳍形成第二沟槽。 在形成翅片之后，形成第三绝缘膜以填充第二沟槽并支撑翅片。 然后去除第一绝缘膜的一部分以打开翅片之间的空间，其中可以形成包括栅极电介质，栅电极和附加接触，绝缘和存储节点结构的附加结构。

    Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines
    99.
    发明申请
    Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines 失效
    具有掩埋位线的半导体器件和具有掩埋位线的半导体器件的制造方法

    公开(公告)号：US20060131613A1

    公开(公告)日：2006-06-22

    申请号：US11240544

    申请日：2005-09-30

    申请人： Tae-yong Kim ,  Choong-ho Lee ,  Chul Lee ,  Eun-suk Cho ,  Suk-kang Sung ,  Hye-jin Cho

    发明人： Tae-yong Kim ,  Choong-ho Lee ,  Chul Lee ,  Eun-suk Cho ,  Suk-kang Sung ,  Hye-jin Cho

    IPC分类号： H01L27/10

    CPC分类号： H01L27/115 ,  H01L27/11568

    摘要： A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity of a second conductivity type opposite to the first conductivity type and spaced from one another in the upper portion of the semiconductor substrate, a first line formed between the pair of bit lines having a plurality of alternating recessed device isolation regions and channel regions, with each of the channel regions contacting each bit line of the at least one pair of bit lines, and word lines formed at right angles to the first lines and covering the channel regions.

    摘要翻译： 半导体器件包括具有第一导电类型并具有上部的半导体衬底，一对位线沿着第一方向延伸并且掺杂有与第一导电类型相反并且彼此间隔开的第二导电类型的杂质 所述半导体衬底的上部，形成在所述一对位线之间的第一线，所述第一线具有多个交替的凹陷器件隔离区域和沟道区域，其中每个沟道区域与所述至少一对位线的每个位线接触 以及与第一线成直角形成并覆盖沟道区的字线。