公开(公告)号：US20070145512A1

公开(公告)日：2007-06-28

申请号：US11710987

申请日：2007-02-27

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L31/06

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02161 ,  H01L31/1136

摘要： A photogate structure having increased quantum efficiency, especially for low wavelength light such as blue light. The photogate is formed of a thin conductive layer, such as a layer of doped polysilicon. A nitride insulating cap is formed over the conductive layer. The nitride layer reduces the reflections at the conductor/insulator interface. A pixel cell incorporating the photogate structure also has a buried accumulation region beneath the photogate. A method of fabricating the photogate structure is also disclosed.

摘要翻译： 具有提高的量子效率的光门结构，特别是对于诸如蓝光的低波长光。 光栅由诸如掺杂多晶硅层的薄导电层形成。 在导电层上形成氮化物绝缘帽。 氮化物层减少了导体/绝缘体界面处的反射。 结合光栅结构的像素单元还具有在光栅下方的掩埋积聚区域。 还公开了制造光栅结构的方法。

公开(公告)号：US20070072325A1

公开(公告)日：2007-03-29

申请号：US11235823

申请日：2005-09-27

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643

摘要： A method for forming a photodiode that is self-aligned to a transfer gate while being compatible with a metal silicide process is disclosed. The method comprises forming a gate stack of gate oxide, polysilicon, and a sacrificial/disposable cap insulator over the polysilicon. The insulator may be a combination of silicon oxynitride and silicon dioxide. After formation of the photodiode, the cap insulator layer is removed.

摘要翻译： 公开了一种在与金属硅化物工艺相容的同时形成与转移栅极自对准的光电二极管的方法。 该方法包括在多晶硅上形成栅极氧化物，多晶硅和牺牲/一次性帽绝缘体的栅极堆叠。 绝缘体可以是氮氧化硅和二氧化硅的组合。 在形成光电二极管之后，去除盖绝缘体层。

公开(公告)号：US20070051989A1

公开(公告)日：2007-03-08

申请号：US11593589

申请日：2006-11-07

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

摘要： A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the trench photosensor.

摘要翻译： 一种用于具有改进的充电容量的CMOS成像器中的沟道光电传感器。 沟道光电传感器可以是光栅或光电二极管结构。 光电传感器的沟槽形状与在基片上占据可比区域的平面光电传感器相比，提供了增加的表面积。 沟道光电传感器还具有更高的充电容量，改善的动态范围和更好的信噪比。 还公开了用于形成沟槽光电传感器的工艺。

公开(公告)号：US20070029469A1

公开(公告)日：2007-02-08

申请号：US11442136

申请日：2006-05-30

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L27/00

CPC分类号： H01L27/14627 ,  H01L27/1462 ,  H01L27/14806 ,  H01L27/14887 ,  H04N5/3535 ,  H04N5/37457

摘要： Embodiments of the invention provide pixel cells that allow both automatic light control and correlated double sampling operations. The pixel cell includes first and second photo-conversion devices that can be separately read out. For example, the second photo-conversion device can be the pixel cells' floating diffusion region, with an area and doping profile suitable for photo-conversion. An image sensor may include an array of pixel cells, some or all of which have two photo-conversion devices, and peripheral circuitry for reading out signals from the pixel cells. The image sensor's readout circuitry may monitor charge generated by the second photo-conversion devices to determine when to read out signals from the first photo-conversion devices.

公开(公告)号：US20070018264A1

公开(公告)日：2007-01-25

申请号：US11210996

申请日：2005-08-24

申请人： Howard Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe ,  Hsin-chih Tai ,  Satyadev Nagaraja ,  Ashish Shah ,  William Qian ,  Hongli Yang ,  Tiejun Dai

发明人： Howard Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe ,  Hsin-chih Tai ,  Satyadev Nagaraja ,  Ashish Shah ,  William Qian ,  Hongli Yang ,  Tiejun Dai

IPC分类号： H01L31/0232

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14654

摘要： An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.

摘要翻译： 公开了一种使用减少电串扰的像素之间的隔离结构的像素阵列的图像传感器。 像素阵列形成在具有薄（小于5微米）外延层的衬底上。 隔离结构使用深p阱来围绕浅沟槽隔离。 使用典型地超过700keV的注入能量形成深p阱。

公开(公告)号：US20070013018A1

公开(公告)日：2007-01-18

申请号：US11526722

申请日：2006-09-26

申请人： Howard Rhodes ,  Edward Heitzeberg

发明人： Howard Rhodes ,  Edward Heitzeberg

IPC分类号： H01L31/0203

CPC分类号： H01L31/0203 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： An imaging chip is packaged in transparent injection molded material. The chip may have photosensitive elements arranged in a two-dimensional array on semiconductor material. Each element corresponds to a pixel of an image. The package may be formed of epoxy resin. In one aspect of the invention, the transparent plastic material provides a color filter. Second and third packages with complementary color filters may be used to provide signals for a color imaging system. In another aspect of the invention, a lens is integrated into the plastic package. In another aspect of the invention, a semiconductor chip is applied to a pre-formed plastic package by bump bonding.

公开(公告)号：US20070001094A1

公开(公告)日：2007-01-04

申请号：US11168759

申请日：2005-06-29

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L27/00

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/101

摘要： Imaging devices with an infrared filter over a surface of the substrate and methods for forming the same are provided. The imager includes a plurality of pixels supported by the substrate. Each pixel includes a photosensor. The imager may also include a plurality of micro-lenses and a color filter array with a plurality of filters, each filter being dedicated to a respective micro-lens. Over the substrate is an infrared filter for inhibiting the passage of infrared radiation to the photosensors.

摘要翻译： 提供了在基板的表面上具有红外滤光器的成像装置及其形成方法。 成像器包括由衬底支撑的多个像素。 每个像素包括光电传感器。 成像器还可以包括多个微透镜和具有多个滤光器的滤色器阵列，每个滤光器专用于相应的微透镜。 在衬底上是用于抑制红外辐射通向光电传感器的红外滤光器。

公开(公告)号：US20060273352A1

公开(公告)日：2006-12-07

申请号：US11488845

申请日：2006-07-19

申请人： Howard Rhodes ,  Jeff McKee

发明人： Howard Rhodes ,  Jeff McKee

IPC分类号： H01L27/148

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609

摘要： A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.

公开(公告)号：US20060249766A1

公开(公告)日：2006-11-09

申请号：US11485268

申请日：2006-07-13

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14656 ,  H01L27/14689 ,  H01L27/14812

摘要： An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of a substrate and a graded pinned surface layer, self-aligned to a gate stack is provided. These photodiodes exhibit reduced image lag, transfer gate leakage, and photodiode dark current generation.

公开(公告)号：US20060244015A1

公开(公告)日：2006-11-02

申请号：US11445217

申请日：2006-06-02

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L27/148

CPC分类号： H01L27/1463 ,  H01L21/76237 ,  H01L27/14643 ,  H01L27/14689

摘要： A method of fabricating an integrated circuit includes forming an isolation trench in a semiconductor substrate and partially filling the trench with a dielectric material so that at least the sidewalls of the trench are coated with the dielectric material. Ions are implanted into the substrate in regions directly below the isolation trench after partially filling the trench with the dielectric material. The dielectric along the sidewalls of the trenches can serve as a mask so that substantially all of the ions implanted below the isolation trenches are displaced from the active regions. The dielectric along the sidewalls of the trenches serves as a mask so that substantially all of the ions implanted below the isolation trenches are displaced from the active regions. After the ions are implanted in the substrate below the trenches, the remainder of the trench can be filled with the same or another dielectric material. The trench isolation technique can be used to fabricate memory, logic and imager devices which can exhibit reduced current leakage and/or reduced optical cross-talk.

摘要翻译： 一种制造集成电路的方法包括在半导体衬底中形成隔离沟槽，并用电介质材料部分地填充沟槽，使得至少沟槽的侧壁被电介质材料涂覆。 在用介电材料部分地填充沟槽之后，将离子注入到隔离沟槽正下方的区域中的衬底中。 沿着沟槽的侧壁的电介质可以用作掩模，使得注入到隔离沟槽下方的基本上所有的离子从活性区域移位。 沿着沟槽的侧壁的电介质用作掩模，使得注入到隔离沟槽下方的基本上所有的离子从活性区域移位。 在离子注入到沟槽下方的衬底中之后，沟槽的其余部分可以用相同或另一种电介质材料填充。 沟槽隔离技术可用于制造可以显示减少的电流泄漏和/或减少的光学串扰的存储器，逻辑和成像器件。