公开(公告)号：US20110247836A1

公开(公告)日：2011-10-13

申请号：US13119481

申请日：2008-09-30

申请人： Takashi Takeuchi

发明人： Takashi Takeuchi

IPC分类号： A62C37/08

CPC分类号： A62C37/12

摘要： To provide a sprinkler head including: a sprinkler head main body having a nozzle therein, connected to water supply piping, and installed in a ceiling; a cover plate concealing the sprinkler head main body; a retainer disposed so that the cover plate is located below the ceiling surface and capable of releasing the cover plate in the event of fire; and a cylindrical member that is attached to the sprinkler head main body and to which the retainer is detachably connected, and having a structure that can save the trouble of removing and reattaching a protective cap at the time of installation of the sprinkler head. The sprinkler head has such a structure that a protective cap attached to the sprinkler head is fitted to the outer periphery of the sprinkler head main body.

摘要翻译： 提供一种洒水头，其特征在于，具备喷淋头主体，其内部具有喷嘴，与喷水管连接，安装在天花板上; 隐藏喷头主体的盖板; 保持器，其设置成使得盖板位于天花板表面下方并且能够在发生火灾时释放盖板; 以及安装在喷头主体上并且保持器可拆卸地连接到其上的圆柱形构件，并且具有能够在安装喷洒头时可以节省移除和重新附着保护盖的麻烦的结构。 喷洒头具有这样一种结构，使得安装在喷洒头上的保护盖安装在喷头主体的外周。

公开(公告)号：US07884387B2

公开(公告)日：2011-02-08

申请号：US12134271

申请日：2008-06-06

申请人： Takashi Takeuchi ,  Toshimitsu Sukegawa

发明人： Takashi Takeuchi ,  Toshimitsu Sukegawa

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  B82Y20/00 ,  H01L33/305 ,  H01S5/0421 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/34326

摘要： An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material, an active layer, a p-type Mg-doped cladding layer, and a p-type contact layer are stacked successively in that order on an n-type GaAs substrate, and the p-type contact layer is formed as at least two layers that are an Mg-doped contact layer and a Zn-doped contact layer stacked thereon when viewed from the n-type GaAs substrate, comprises a Zn-doped layer which is inserted between the p-type Mg-doped cladding layer and the p-type contact layer.

摘要翻译： 根据本发明的用于半导体发光器件的外延晶片，其中至少形成有由AlGaInP材料，有源层，p型Mg掺杂包覆层和 p型接触层依次层叠在n型GaAs衬底上，p型接触层形成为Mg掺杂接触层和Zn掺杂接触层堆叠的至少两层 从n型GaAs衬底观察时，其包括插入在p型Mg掺杂包覆层和p型接触层之间的Zn掺杂层。

公开(公告)号：US07843909B2

公开(公告)日：2010-11-30

申请号：US12216965

申请日：2008-07-14

申请人： Takashi Takeuchi ,  Koji Wakayama

发明人： Takashi Takeuchi ,  Koji Wakayama

IPC分类号： H04L12/50

CPC分类号： H04L12/2801 ,  H04L47/15 ,  H04L47/70 ,  H04L47/788 ,  H04L47/808

摘要： Bandwidth control over users accommodated under ONU in PON is achieved. BAS sets user bandwidth information obtained during user authorization in OLT. The OLT achieves bandwidth control on a user basis, using bandwidth information set from the BAS. The present invention enables bandwidth control over users under the ONUs.

摘要翻译： 实现了PON内ONU下的用户带宽控制。 BAS设置在用户授权期间在OLT中获得的用户带宽信息。 OLT使用从BAS设置的带宽信息，在用户的基础上实现带宽控制。 本发明使得能够对ONU之下的用户进行带宽控制。

公开(公告)号：US20100228131A1

公开(公告)日：2010-09-09

申请号：US12572890

申请日：2009-10-02

申请人： Yutaka OONUKI ,  Hiroyuki Shikata ,  Takashi Takeuchi

发明人： Yutaka OONUKI ,  Hiroyuki Shikata ,  Takashi Takeuchi

IPC分类号： A61B8/00

CPC分类号： A61B8/0833 ,  A61B8/0841 ,  A61B8/4455 ,  A61B17/3403 ,  A61B2017/3413 ,  A61B2090/067 ,  A61B2090/0811

摘要： An ultrasound diagnostic apparatus including an ultrasonic probe transmitting and receiving ultrasound toward and from a subject, a puncture adaptor configured to be fixed to the ultrasonic probe and to hold a puncture needle, wherein the puncture adaptor has moving part movable in relation to the ultrasonic probe with the puncture needle, and a sensor provided at the ultrasonic probe, and configured to detect the position of the moving part.As the puncture needle is moved relative to the probe, the movable part is correspondingly moved relative to the probe, and movement of the movable part, and therefore also of the puncture needle, is detected by the sensor.

摘要翻译： 一种超声波诊断装置，包括：超声波探头，其对被检体进行超声波收发;穿刺适配器，被配置为固定在所述超声波探头上并保持穿刺针，其中，所述穿刺适配器具有可移动相对于所述超声波探头 以及设置在所述超声波探头上的传感器，并且被配置为检测所述移动部件的位置。 当穿刺针相对于探针移动时，可移动部分相对于探针相应地移动，并且传感器检测可动部分以及因此也可以是穿刺针的移动。

公开(公告)号：US20100224855A1

公开(公告)日：2010-09-09

申请号：US12656674

申请日：2010-02-12

申请人： Takashi Takeuchi ,  Taichiroo Konnno

发明人： Takashi Takeuchi ,  Taichiroo Konnno

IPC分类号： H01L33/00

CPC分类号： H01L33/325 ,  H01L33/025

摘要： A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.

摘要翻译： 发光器件外延晶片包括n型衬底，堆叠在n型衬底上的n型覆层，包括堆叠在n型覆层上的量子阱结构的发光层和p型 型覆盖层堆叠在发光层上。 n型包覆层包括掺杂有2种以上的包含Si的n型掺杂剂的混合物的外延层，并且厚度不小于250nm且不大于750nm。 或者，发光装置外延晶片包括n型衬底，堆叠在n型衬底上的n型覆层，堆叠在n型覆层上的发光层和p型覆层 层叠在发光层上。 n型包覆层包含2种以上含有Si的n型杂质。

公开(公告)号：US20090134746A1

公开(公告)日：2009-05-28

申请号：US12274689

申请日：2008-11-20

申请人： Hiroyuki Shikata ,  Takashi Takeuchi

发明人： Hiroyuki Shikata ,  Takashi Takeuchi

IPC分类号： H01L41/00 ,  H04R31/00

CPC分类号： B06B1/0629 ,  G10K11/02 ,  Y10T29/49005

摘要： A plurality of piezoelectric elements are arrayed two-dimensionally. A plurality of electrodes are respectively formed on the plurality of piezoelectric elements. A plurality of non-conductive members have columnar shape and are arranged on the plurality of electrodes. A plurality of internal metal layers are respectively provided for the plurality of non-conductive members. The internal metal layers reach from arrangement surfaces of the non-conductive members to other surfaces of the non-conductive members. The arrangement surfaces are opposite to the other surfaces.

摘要翻译： 多个压电元件二维排列。 多个电极分别形成在多个压电元件上。 多个非导电构件具有柱状并且布置在多个电极上。 分别为多个非导电构件设置多个内部金属层。 内部金属层从不导电构件的布置表面到达非导电构件的其它表面。 排列表面与其它表面相对。

公开(公告)号：US20090134467A1

公开(公告)日：2009-05-28

申请号：US12262180

申请日：2008-10-31

申请人： Hiroshi ISHIDA ,  Atsushi Maeda ,  Minoru Abiko ,  Takehiko Kijima ,  Takashi Takeuchi ,  Shoji Yoshida ,  Natsuo Yamaguchi ,  Yasuhiro Kimura ,  Tetsuya Uchida ,  Norio Ishitsuka

发明人： Hiroshi ISHIDA ,  Atsushi Maeda ,  Minoru Abiko ,  Takehiko Kijima ,  Takashi Takeuchi ,  Shoji Yoshida ,  Natsuo Yamaguchi ,  Yasuhiro Kimura ,  Tetsuya Uchida ,  Norio Ishitsuka

IPC分类号： H01L27/105 ,  H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/26513 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/7835

摘要： A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in FIG. 4. That is, on the precondition that the active areas in n-channel MISFET formation regions are all configured in the isolated structure: the width of the terminal sections is made larger than the width of the central parts of the active areas. For example, the terminal sections are formed in an L shape.

摘要翻译： 提供了一种能够抑制在有源区域中产生的晶体缺陷从而减少半导体器件的缺陷的技术。 第一实施例涉及SRAM的平面配置。 第一实施例的特征之一如图1所示。 也就是说，在n沟道MISFET形成区域中的有源区域全部配置在隔离结构中的前提下，端子部分的宽度大于有源区域的中心部分的宽度。 例如，端子部分形成为L形。

公开(公告)号：US20080286290A1

公开(公告)日：2008-11-20

申请号：US11791888

申请日：2006-06-05

申请人： Shoji Furusako ,  Kazayuki Nakayama ,  Yoshitaka Hosaka ,  Tetsushi Kawahara ,  Masaki Nakamura ,  Takashi Takeuchi

发明人： Shoji Furusako ,  Kazayuki Nakayama ,  Yoshitaka Hosaka ,  Tetsushi Kawahara ,  Masaki Nakamura ,  Takashi Takeuchi

IPC分类号： A61K39/395 ,  C07K16/00 ,  C07H21/04 ,  C12N15/63 ,  C12N5/00 ,  A61P31/00 ,  C12P21/00 ,  A61K35/00 ,  A61K31/7088

CPC分类号： C07K16/2896 ,  A61K38/00 ,  A61K39/39541 ,  A61K2039/505 ,  C07K14/81 ,  C07K2317/24 ,  C07K2319/00 ,  A61K2300/00

摘要： A protein comprising (I) an anti-CD14 antibody or its active fragment, or a derivative thereof and (II) an inhibitor for a protease, or its active fragment, or a derivative thereof is provided.

摘要翻译： 提供了包含（I）抗CD14抗体或其活性片段或其衍生物和（II）蛋白酶抑制剂或其活性片段或其衍生物的蛋白质。

公开(公告)号：US07401390B2

公开(公告)日：2008-07-22

申请号：US11662626

申请日：2005-09-22

申请人： Takao Kumazawa ,  Takashi Takeuchi

发明人： Takao Kumazawa ,  Takashi Takeuchi

IPC分类号： D06C3/04

CPC分类号： B65H20/16 ,  B29C41/28 ,  B29C55/20 ,  B29D7/01 ,  F26B13/12

摘要： A clip (10) has a frame (31) and a flapper (32). Two dry bearings (37) are inserted into a hole (32d) formed in the flapper. Then an attaching shaft (35) is inserted from one of the holes (34a) in the frame (31) to the other through the dry bearings (37), so as to swingably attaching the flapper (32) to the frame (31). DAIDAYNE DDK 01 of DAIDO METAL Corp. is used as the dry bearing (37). A first and a second clip covers (51,52) are provided to cover the clips (10). Fresh air feeding pipes (55) are connected to the first and second clip covers (51,52). Fresh air is fed from the fresh air feeding pipes (55) toward the clips (10) through air outlets (56) provided in the first and second clip covers (51,52).

摘要翻译： 夹具（10）具有框架（31）和挡板（32）。 将两个干式轴承（37）插入形成在挡板上的孔（32d）中。 然后，通过干式轴承（37）将安装轴（35）从框架（31）中的一个孔（34a）插入另一个，以便将挡板（32）可摆动地附接到框架（31） ）。 DAIDO METAL公司的DAIDAYNE DDK 01用作干式轴承（37）。 提供第一和第二夹子盖（51,52）以覆盖夹子（10）。 新鲜空气供给管（55）连接到第一和第二夹套（51,52）。 新鲜空气通过设置在第一和第二夹套（51,52）中的空气出口（56）从新鲜空气供给管（55）进给夹子（10）。

公开(公告)号：US20080118833A1

公开(公告)日：2008-05-22

申请号：US11667110

申请日：2005-11-16

申请人： Atsushi Ueda ,  Shoichiro Watanabe ,  Takeshi Yao ,  Takashi Takeuchi ,  Takayuki Shirane ,  Takaya Saito ,  Hiromi Nagata

发明人： Atsushi Ueda ,  Shoichiro Watanabe ,  Takeshi Yao ,  Takashi Takeuchi ,  Takayuki Shirane ,  Takaya Saito ,  Hiromi Nagata

IPC分类号： H01M4/02 ,  H01M4/58 ,  H01M4/52 ,  H01M10/40

CPC分类号： H01M10/0566 ,  H01M4/131 ,  H01M4/133 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/587 ,  H01M10/0525 ,  H01M10/44 ,  H01M10/448 ,  H01M2010/4292

摘要： A non-aqueous electrolyte secondary battery includes a positive electrode that contains a lithium composite oxide as an active material. The cut-off voltage of charge is set to 4.25 to 4.5 V. In a region where the positive electrode and the negative electrode face each other, the Wp/Wn ratio R is in the range from 1.3 to 19 where Wp is the weight of the active material contained in the positive electrode per unit area and Wn is the weight of the active material contained in the negative electrode per unit area. This battery is excellent in safety, cycle characteristics, and storage characteristics even when the cut-off voltage of charge in a normal operating condition is set to 4.25 V or more.

摘要翻译： 非水电解质二次电池包括含有作为活性物质的锂复合氧化物的正极。 电荷截止电压设定为4.25〜4.5V。在正极和负极彼此面对的区域中，Wp / Wn比R在1.3〜19的范围内，Wp为 包含在每单位面积的正极中的活性物质，Wn是单位面积中负极中含有的活性物质的重量。 即使正常工作状态下的充电截止电压设定为4.25V以上，该电池的安全性，循环特性，存储特性也优异。