公开(公告)号：US07817860B2

公开(公告)日：2010-10-19

申请号：US12326544

申请日：2008-12-02

申请人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

IPC分类号： G06K9/46 ,  G06K9/00 ,  G06K9/68

CPC分类号： G06T7/74 ,  G06T2207/30148

摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

摘要翻译： 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品（例如ArF曝光光致抗蚀剂）的高精度尺寸测量的扫描电子显微镜（SEM）。 为此，预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形（或图像）的部分波形（或部分图像），测量目标信号波形（或图像） 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

公开(公告)号：US20090208090A1

公开(公告)日：2009-08-20

申请号：US12350260

申请日：2009-01-08

申请人： Tomofumi NISHIURA ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

发明人： Tomofumi NISHIURA ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06K9/6255 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.

摘要翻译： 在半导体缺陷检查装置及其自动检测半导体晶片上的缺陷的方法中，使用电路设计数据设定缺陷发生因子，通过使电路设计数据变形来形成多个形状 相对于与检查对象电路图案进行比较的各个缺陷发生因子规定的形状变形项目的设计数据。 通过比较形成的形状组和实际图案来检测缺陷。 此外，推测出这些缺陷的发生因素，根据各自的因素对缺陷进行分类。

公开(公告)号：US07408154B2

公开(公告)日：2008-08-05

申请号：US11260187

申请日：2005-10-28

申请人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/28 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/2826

摘要： As measurement accuracy required for the scanning electron microscope (SEM) for measuring a pattern width becomes stringent, a technique of reducing the difference in a measured dimension between the SEM's is desired. However, the conventional technique of evaluating the difference in a measured dimension between the SEM's cannot separate the difference in a measured dimension between the SEM's themselves and a dimensional change resulting from deformation of the pattern itself. Moreover, the technique of reducing the difference in a measured dimension between the SEM's needs an operator for reducing the difference in a measured dimension between the SEM's for each measurement pattern shape. In this invention, a pattern at the same position is measured for a plurality of times with each SEM, and a different between extrapolated values of measured values obtained by the respective SEM's is calculated, whereby separation between the difference in a measured dimension between the SEM's and a dimensional change resulting from deformation of the pattern itself is made possible. Moreover, matching electron beam image profiles between the SEM's using an operator that simulates a difference in beam diameter between the SEM's makes it possible to reduce the difference in a measured dimension between the SEM's, not depending on a dimensional measurement pattern shape.

摘要翻译： 由于用于测量图形宽度的扫描电子显微镜（SEM）所需的测量精度变得严格，所以希望减少SEM之间的测量尺寸差异的技术。 然而，评估SEM之间的测量尺寸差异的常规技术不能分离SEM本身之间的测量尺寸与由图案本身的变形引起的尺寸变化之间的差异。 此外，减少SEM之间的测量尺寸的差异的技术需要一个操作者，用于减小每个测量图案形状的SEM之间的测量尺寸的差异。 在本发明中，通过各SEM测量同一位置的图案多次，并且计算通过各SEM得到的测量值的外推值之间的差异，由此SEM之间的测量尺寸差异之间的差异 并且由于图案本身的变形引起的尺寸变化成为可能。 此外，使用模拟SEM之间的光束直径差的SEM的SEM之间的匹配电子束图像轮廓可以减小SEM之间的测量尺寸的差异，而不依赖于尺寸测量图案形状。

公开(公告)号：US20050205780A1

公开(公告)日：2005-09-22

申请号：US10988522

申请日：2004-11-16

申请人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

发明人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

IPC分类号： G01B15/00 ,  G01N23/00 ,  G01N23/225 ,  G03C5/00 ,  H01J37/28

CPC分类号： G01N23/225

摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.

摘要翻译： 本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响， 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。

公开(公告)号：US20120002861A1

公开(公告)日：2012-01-05

申请号：US13231394

申请日：2011-09-13

申请人： Tomofumi Nishiura ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

发明人： Tomofumi Nishiura ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06K9/6255 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.

摘要翻译： 用于检查形成在半导体晶片上的电路图案的缺陷的装置和方法包括：缺陷分类器，具有比较形状形成部，用于通过使电路的形状变形来形成与检查区域的SEM图像对应的多个比较形状 使用与检查区域内的电路图案相对应的设计数据的多个形状变形规则的形状以及形成和选择为比较形状的多个比较形状中的检查区域的SEM图像的形状，以及 形状比较和分类部分，用于使用在比较形状形成部分中选择的比较形状的信息和检查区域的SEM图像的电路图案的检查形状来对SEM图像进行分类。

公开(公告)号：US07807980B2

公开(公告)日：2010-10-05

申请号：US11647348

申请日：2006-12-29

申请人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： G21K7/00 ,  A61N5/00 ,  G21G5/00

CPC分类号： H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2826

摘要： The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

摘要翻译： 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸（CD值）的带电粒子束装置。 对于本发明，使用用于校准的样品，其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时，根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此，本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法，以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。

公开(公告)号：US20070092130A1

公开(公告)日：2007-04-26

申请号：US11322560

申请日：2006-01-03

申请人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

IPC分类号： G06K9/00

CPC分类号： G06T7/74 ,  G06T2207/30148

摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

摘要翻译： 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品（例如ArF曝光光致抗蚀剂）的高精度尺寸测量的扫描电子显微镜（SEM）。 为此，预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形（或图像）的部分波形（或部分图像），测量目标信号波形（或图像） 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

公开(公告)号：US07164127B2

公开(公告)日：2007-01-16

申请号：US10988522

申请日：2004-11-16

申请人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

发明人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

IPC分类号： G01N23/00

CPC分类号： G01N23/225

摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.

摘要翻译： 本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响， 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。

公开(公告)号：US20050051721A1

公开(公告)日：2005-03-10

申请号：US10875509

申请日：2004-06-25

申请人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

发明人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

IPC分类号： G01B11/24 ,  G01B15/04 ,  G01N21/47 ,  G01N23/225 ,  H01J37/28 ,  H01L21/66 ,  G01N23/00

CPC分类号： G01N21/4788 ,  G01N23/225 ,  H01J2237/2816

摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, The method and apparatus for executing following steps of calculating an average of the dimensional values of said plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of said feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be required precisely by the above subject matter.

摘要翻译： 提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。 例如，用于执行以下步骤的方法和装置，用于计算所述多个扫描的特征对象的维度值的平均值; 并且基于所计算的平均值和当照射光时获得的所述特征对象的尺寸值之间的差异来计算尺寸值的偏移。 精确地通过上述主题来要求光学测量装置和扫描电子显微镜之间的测量值之间的偏移。

公开(公告)号：US06169282A

公开(公告)日：2001-01-02

申请号：US09181851

申请日：1998-10-29

申请人： Shunji Maeda ,  Kenji Oka ,  Hiroshi Makihira ,  Yasuhiko Nakayama ,  Minoru Yoshida ,  Yukihiro Shibata ,  Chie Shishido

发明人： Shunji Maeda ,  Kenji Oka ,  Hiroshi Makihira ,  Yasuhiko Nakayama ,  Minoru Yoshida ,  Yukihiro Shibata ,  Chie Shishido

IPC分类号： H01J3728

CPC分类号： G06T7/001 ,  G01R31/308 ,  G01R31/311 ,  G03F7/7065 ,  G06T7/0004 ,  G06T2207/10061 ,  G06T2207/30121 ,  G06T2207/30148

摘要： A defect inspection method and apparatus therefor for a pattern to be inspected having a plurality of chips formed so as to be identical detect an image signal of a pattern to be inspected and when the image signal is to be compared with a detected image signal of an adjacent or separated pattern to be inspected on the substrate, convert the gray level so that the brightness of each of two image signals for comparing one or both of the detected image signals is almost identical in the local region by linear conversion having a gain and offset, and when a pattern is inspected using it, highly sensitive defect inspection for a pattern to be inspected for detecting a defect of a semiconductor wafer can be realized.

摘要翻译： 对于要检查的图案的缺陷检查方法及其装置，其具有形成为相同的多个芯片，以检测待检查图案的图像信号，并且当图像信号要与检测到的图像信号进行比较时 要在基板上检查的相邻或分离的图案，转换灰度级，使得用于比较检测到的图像信号中的一个或两个的两个图像信号中的每一个的亮度在局部区域中通过具有增益和偏移的线性转换几乎相同 ，并且当使用它来检查图案时，可以实现用于检测半导体晶片的缺陷的待检查图案的高灵敏度缺陷检查。