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    Sample dimension-measuring method and charged particle beam apparatus
    1.
    发明授权
    Sample dimension-measuring method and charged particle beam apparatus 有权
    样品尺寸测量方法和带电粒子束装置

    公开(公告)号：US07476856B2

    公开(公告)日：2009-01-13

    申请号：US10875509

    申请日：2004-06-25

    申请人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

    发明人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

    IPC分类号： G01N23/00 ,  G01B11/10

    CPC分类号： G01N21/4788 ,  G01N23/225 ,  H01J2237/2816

    摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, the method and apparatus may execute the following steps: calculating an average of the dimensional values of a plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of the feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be determined precisely.

    摘要翻译： 提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。 例如，该方法和装置可以执行以下步骤：计算多个扫描的特征对象的维度值的平均值; 并且基于计算的平均值与照射光时获得的特征对象的尺寸值之间的差异来计算尺寸值的偏移。 可以精确地确定光学测量装置与扫描电子显微镜之间的测量值之间的偏移。

    Micropattern shape measuring system and method
    6.
    发明授权
    Micropattern shape measuring system and method 有权
    微图形测量系统及方法

    公开(公告)号：US06894790B2

    公开(公告)日：2005-05-17

    申请号：US10291675

    申请日：2002-11-12

    申请人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

    发明人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

    IPC分类号： G01Q30/04 ,  H01L23/544 ,  G01B11/02

    CPC分类号： H01L22/34

    摘要： A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

    摘要翻译： 用光束照射在晶片的划线区域中形成的测试图案，以测量其宽度; 用电子束照射测试图案以测量其宽度; 计算测试图案的宽度的变化量; 用电子束照射具有与晶片的半导体器件相同的宽度的虚拟图案，以测量其宽度; 并且通过使用计算出的宽度变化量来估计图案的宽度，以便确定图案的形状。 因此，可以提供能够在不改变微图案的尺寸的情况下确定半导体器件中的微图案的形状的形状测量系统和方法。

    Charged particle beam apparatus
    7.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号：US08334520B2

    公开(公告)日：2012-12-18

    申请号：US13124599

    申请日：2009-10-22

    申请人： Tadashi Otaka ,  Hiroyuki Ito ,  Ryoichi Ishii ,  Manabu Yano ,  Hajime Kawano

    发明人： Tadashi Otaka ,  Hiroyuki Ito ,  Ryoichi Ishii ,  Manabu Yano ,  Hajime Kawano

    IPC分类号： H01J37/26

    CPC分类号： H01J37/20 ,  H01J37/28 ,  H01J2237/20214 ,  H01J2237/2811 ,  H01J2237/2817

    摘要： An exemplary a charged particle beam apparatus converts an inspection position on a test sample (wafer coordinate system) to a setting position of an inspection mechanism (stage coordinate system (polar coordinate system)), a rotating arm and a rotating stage being rotated to be moved for the inspection position on the test sample. In this case, inspection devices are arranged over a locus that is drawn by the center of the rotating stage according to the rotation of the rotating arm. A function for calculating errors (e.g., center shift of the rotating stage) and compensating for the errors is provided, by which the precision of inspection is improved in a charged particle beam apparatus equipped with a biaxial rotating stage mechanism.

    摘要翻译： 一种带电粒子束装置的示例将测试样品（晶片坐标系）上的检查位置转换成检查机构（载台坐标系（极坐标系））的设置位置，旋转臂和旋转台旋转为 移动到测试样品上的检查位置。 在这种情况下，检查装置设置在由旋转台的旋转中心旋转的轨迹上。 提供了一种用于计算误差（例如，旋转台的中心偏移）和补偿误差的功能，通过该功能，在装备有双轴旋转平台机构的带电粒子束装置中提高了检查精度。

    Method for measuring dimensions of sample and scanning electron microscope
    8.
    发明授权
    Method for measuring dimensions of sample and scanning electron microscope 有权
    测量样品和扫描电子显微镜尺寸的方法

    公开(公告)号：US07659508B2

    公开(公告)日：2010-02-09

    申请号：US10450852

    申请日：2002-03-27

    申请人： Osamu Nasu ,  Tadashi Otaka ,  Hiroki Kawada ,  Ritsuo Fukaya ,  Makoto Ezumi

    发明人： Osamu Nasu ,  Tadashi Otaka ,  Hiroki Kawada ,  Ritsuo Fukaya ,  Makoto Ezumi

    IPC分类号： H01J37/28 ,  G01N23/225

    CPC分类号： H01J37/28 ,  G01B15/00 ,  G01N23/225 ,  H01J2237/2814

    摘要： The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.

    摘要翻译： 本发明抑制在半导体样品的表面上形成的图案的体积减少，或者执行精确的长度测量，而不管这种减少。 在带电粒子射线装置中，通过用带电粒子射线扫描每个样品的表面并检测从样品释放的二次电子，测量在样品上形成的图案的线宽和其它长度数据，扫描 所述带电粒子束的线间隔被设定为不超过由样品的物理特性决定的照射密度。 或者测量的长度数据由预先存储的近似函数计算。

    Monochromator and scanning electron microscope using the same
    9.
    发明授权
    Monochromator and scanning electron microscope using the same 失效

    公开(公告)号：US07022983B2

    公开(公告)日：2006-04-04

    申请号：US10751907

    申请日：2004-01-07

    申请人： Yoichi Ose ,  Shunroku Taya ,  Hideo Todokoro ,  Tadashi Otaka ,  Mitsugu Sato ,  Makoto Ezumi

    发明人： Yoichi Ose ,  Shunroku Taya ,  Hideo Todokoro ,  Tadashi Otaka ,  Mitsugu Sato ,  Makoto Ezumi

    IPC分类号： H01J37/05

    CPC分类号： H01J37/05 ,  H01J37/153 ,  H01J37/28

    摘要： An invention providing a scanning electron microscope composed of a monochromator capable of high resolution, monochromatizing the energy and reducing chromatic aberrations without significantly lowering the electrical current strength of the primary electron beam. A scanning electron microscope is installed with a pair of sectorial magnetic and electrical fields having opposite deflection directions to focus the electron beam and then limit the energy width by means of slits, and another pair of sectorial magnetic and electrical fields of the same shape is installed at a position forming a symmetrical mirror versus the surface containing the slits. This structure acts to cancel out energy dispersion at the object point and symmetrical mirror positions, and by spatially contracting the point-converged spot beam with a converging lens system, improves the image resolution of the scanning electron microscope.