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    Support leg connecting structure for a tripod
    91.
    发明授权
    Support leg connecting structure for a tripod 有权

    公开(公告)号：US11767947B2

    公开(公告)日：2023-09-26

    申请号：US16672551

    申请日：2019-11-04

    Applicant: Chien-Ting Lin

    Inventor： Chien-Ting Lin

    IPC: F16M11/24 ,  F16B12/44

    CPC classification number: F16M11/245 ,  F16B12/44 ,  F16B2012/446

    Abstract: Provided is a support leg connecting structure for a tripod. The tripod includes a central tube, three support legs, three braces, and an upper tripod unit. The support leg connecting structure includes: a flat fixing portion formed at an appropriate portion of an outer wall of each of the support legs by pressing and recessing, and provided with a piercing hole; a recessed curved surface disposed between the flat fixing portion and an undeformed portion of the support leg; a curling portion formed on one end of each of the braces by curling, and having a through hole, the curling portion surrounding a periphery of the through hole; and a fastening part. The piercing hole corresponds to the through hole, the fastening part is inserted through the piercing hole and the through hole, the support leg and the brace are pivotally connected to each other around the fastening part.

    Mobile phone clamp
    92.
    外观设计
    Mobile phone clamp 有权

    公开(公告)号：USD998604S1

    公开(公告)日：2023-09-12

    申请号：US29759956

    申请日：2020-11-26

    Applicant: Chien-Ting Lin

    Designer： Chien-Ting Lin

    Abstract: FIG. 1 is a perspective view of a mobile phone clamp showing my new design;
    FIG. 2 is a front elevational view thereof;
    FIG. 3 is a rear elevational view thereof;
    FIG. 4 is a left elevational view thereof;
    FIG. 5 is a right elevational view thereof;
    FIG. 6 is a top view thereof;
    FIG. 7 is a bottom view thereof;
    FIG. 8 is a perspective view of the mobile phone clamp viewed from another direction;
    FIG. 9 is a perspective view of the mobile phone clamp showing a first use state; and,
    FIG. 10 is a perspective view of the mobile phone clamp showing a second use state.
    The portions of mobile phone clamp shown in broken lines form no part of the claimed design, and the broken lines showing a cylindrical element in FIGS. 9 and 10 depict environmental structure that forms no part of the claimed design.

    Side lock sleeve assembly
    95.
    发明授权
    Side lock sleeve assembly 有权

    公开(公告)号：US10344787B2

    公开(公告)日：2019-07-09

    申请号：US15346735

    申请日：2016-11-09

    Applicant: Chien-Ting Lin

    Inventor： Chien-Ting Lin

    IPC: F16B7/14 ,  F16B7/18 ,  F16M11/28

    Abstract: A side lock sleeve assembly includes: a first tube, a sleeve having a first coupling portion defining a first receiving space for sleeving over the first tube, wherein a hole is formed on the first coupling portion at a position between a center of the first receiving space and an outer surface of the sleeve; and a fastening screw having an operation section and an extension section, wherein a diameter of the screw gradually decreases from the operation section toward the extension section such that threadedly extension of the extension section through the hole to retain the extension section between the sleeve and the first tube and such that threadedly insertion of the extension section of the screw through the hole results in a threaded fitting portion on an outer surface of the first tube complementing with the extension section, thereby snugly receiving the extension section of the screw therein.

    Method for fabricating field effect transistor with fin structure
    98.
    发明授权
    Method for fabricating field effect transistor with fin structure 有权
    具有翅片结构的场效应晶体管的制造方法

    公开(公告)号：US08853013B2

    公开(公告)日：2014-10-07

    申请号：US13213092

    申请日：2011-08-19

    Applicant: Shih-Hung Tsai ,  Rai-Min Huang ,  Chien-Ting Lin

    Inventor： Shih-Hung Tsai ,  Rai-Min Huang ,  Chien-Ting Lin

    IPC: H01L21/336 ,  H01L29/78

    CPC classification number: H01L29/7854

    Abstract: A method for fabricating a field effect transistor with fin structure includes the following sequences. First, a substrate is provided and at least a fin structure is formed on the substrate. Then, an etching process is performed to round at least an upper edge in the fin structure. Finally, a gate covering the fin structure is formed.

    Abstract translation: 制造具有鳍结构的场效应晶体管的方法包括以下顺序。 首先，提供基板，并且在基板上形成至少一个翅片结构。 然后，执行蚀刻处理以使鳍结构中的至少一个上边缘圆弧。 最后，形成覆盖翅片结构的门。

    Method for manufacturing a CMOS device having dual metal gate
    100.
    发明授权
    Method for manufacturing a CMOS device having dual metal gate 有权
    制造具有双金属栅极的CMOS器件的方法

    公开(公告)号：US08685811B2

    公开(公告)日：2014-04-01

    申请号：US12013485

    申请日：2008-01-14

    Applicant: Chien-Ting Lin ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Guang-Hwa Ma ,  Chin-Sheng Yang

    Inventor： Chien-Ting Lin ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Guang-Hwa Ma ,  Chin-Sheng Yang

    IPC: H01L21/8238

    CPC classification number: H01L21/823842 ,  H01L21/823807 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7843

    Abstract: A method for manufacturing a CMOS device includes providing a substrate having a first active region and a second active region defined thereon, forming a first conductive type transistor and a second conductive type transistor respectively in the first and the second active regions, performing a salicide process, forming an ILD layer, performing a first etching process to remove a first gate of the first conductive type transistor and to form an opening while a high-K gate dielectric layer is exposed in a bottom of the opening, and forming at least a first metal layer in the opening.

    Abstract translation: 一种用于制造CMOS器件的方法，包括：提供具有第一有源区和限定在其上的第二有源区的衬底，分别在第一和第二有源区中形成第一导电型晶体管和第二导电型晶体管，执行自对准硅化物工艺 ，形成ILD层，执行第一蚀刻工艺以去除第一导电型晶体管的第一栅极并形成开口，同时高K栅极电介质层暴露在开口的底部，并形成至少第一 金属层在开口。

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