摘要:
A flash memory device that has a global and local bit line design that enables an alternate bit line stress mode as well as a way to detect short circuits in local and global bit lines with a single alternate bit line program. The flash memory device has a plurality of sets of adjacent local bit lines, a plurality of global bit lines and a plurality of select transistors. Each select transistor has a control gate and is coupled between one of the local bit lines in each set of local bit lines and one of the global bit lines. Thus, each local bit line in each set of local bit lines is coupled to a different global bit line. Multiple select lines are used to activate the control gates on the select transistors. Each select line is coupled to the control gates on associated select transistors. The associated select transistors are select transistors that are coupled to the local bit lines in an associated set of local bit lines.
摘要:
A method for checking the accuracy of non-standard line widths in a layout includes marking lines with a line width marker, and associating the line width markers with the lines throughout a design process to ensure that the lines remain at the desired widths.
摘要:
A motor vehicle air conditioning installation includes a pair of parallel tubes with annular beads at their free ends, for assembly to a component of the fluid circuit of the installation, and a clamping plate or strut connecting the two tubes together. The strut is an elongated plate having two through apertures. One of these is a notch open at one end of the plate. Each aperture has a substantially semicircular region matching the circumference of the associated tubular element fitting within it. The second aperture is surrounded by the material of the plate over its whole periphery, and includes a widened region through which the associated bead of the corresponding tubular element can pass, this widened region being joined directly to the substantially semicircular region. The strut cannot be separated from the tubes without resilient deformation of the latter, which avoids the danger of its becoming lost during disassembly.
摘要:
Various systems and methods for interference beacon transmission are disclosed. In one embodiment, an apparatus for initiating cell reselection in a wireless communication device, such as a HNB, comprises a processor configured to determine a first frequency at which one or more wireless communication devices communicate with a first cell and a transceiver configured to transmit an interference beacon at the first frequency configured to at least partially interfere with communications at the first frequency and initiate a cell reselection process by at least one of the wireless communication devices.
摘要:
Methods, apparatuses, and computer program products are disclosed for facilitating a beacon-assisted handover from a macro network to a femto cell during an active call. A femto cell management system assigns a unique identifier to a femto cell, which the femto cell utilizes to broadcast a beacon at a frequency different than the operating frequency of the femto cell. A wireless terminal receives a control message from the macro network directing the wireless terminal to scan particular frequencies. The wireless terminal subsequently provides a report to the macro network identifying attributes ascertained from the scan, which includes attributes associated with the beacon. The macro network then performs a handover from the macro network to the femto cell as a function of the attributes.
摘要:
Circuitry for restoring data values in re-writable non-volatile memory is disclosed. An integrated circuit includes a memory access circuit and a sensing circuit configured to sense a data signal during a read operation to at least one two-terminal non-volatile cross-point memory array. Each memory array includes a plurality of two-terminal memory elements. A plurality of the memory arrays can be fabricated over the substrate and vertically stacked on one another. Further, the integrated circuit can include a margin manager circuit configured to manage a read margin for the two-terminal memory elements substantially during the read operation, thereby providing for contemporaneous read and margin determination operations. Stored data read from the two-terminal memory elements may have a value of the stored data restored (e.g., re-written to the same cell or another cell) if the value is not associated with a read margin (e.g., a hard programmed or hard erased state).
摘要:
A small base node such as a Home Base Node (HNB), or femto cell, may reduce its transmit power in order to prevent co-channel or adjacent channel interference, or to limit its coverage area. Once the power is set, the HNB signal to a served Home User Equipment (HUE) its transmit Common Pilot Channel (CPICH) transmit power for accurate path loss estimation. When this power is outside of the permissible range, the HNB adjusts other parameters (such as Random Access Channel (RACH) constant value) to compensate for the error in signaled CPICH power, and thus compensate in that process the error in determining path loss. Similarly, if the uplink sensitivity is adjusted, to prevent interference, parameters would also be adjusted and signaled to the HUE to reflect the link imbalance.
摘要:
Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to generate access signals to facilitate memory operations in scaled arrays of memory elements, such as memory implemented in third dimensional memory technology formed BEOL directly on top of a FEOL substrate that includes data access circuitry. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements disposed among word lines and subsets of bit lines, and an access signal generator. The access signal generator can be configured to modify a magnitude of a signal to generate a modified magnitude for the signal to access a resistive memory element associated with a word line and a subset of bit lines. The modified magnitude can be a function of the position of the resistive memory element in the cross-point array.
摘要:
Circuitry and methods for restoring data values in non-volatile memory are disclosed. An integrated circuit includes a memory access circuit and a sensing circuit configured to sense a data signal during a read operation to at least one two-terminal non-volatile cross-point memory array. Each memory array includes a plurality of two-terminal memory cells. A plurality of the memory arrays can be fabricated over the substrate and vertically stacked on one another. Further, the integrated circuit can include a margin manager circuit configured to manage a read margin for the two-terminal memory cells substantially during the read operation, thereby providing for contemporaneous read and margin determination operations. Stored data read from the two-terminal memory cells may have a value of the stored data restored (e.g., re-written to the same cell or another cell) if the value is not associated with a read margin (e.g., a hard programmed or hard erased state).
摘要:
Methods, apparatuses, and computer program products are disclosed for facilitating a beacon-assisted handover from a macro network to a femto cell during an active call. A femto cell management system assigns a unique identifier to a femto cell, which the femto cell utilizes to broadcast a beacon at a frequency different than the operating frequency of the femto cell. A wireless terminal receives a control message from the macro network directing the wireless terminal to scan particular frequencies. The wireless terminal subsequently provides a report to the macro network identifying attributes ascertained from the scan, which includes attributes associated with the beacon. The macro network then performs a handover from the macro network to the femto cell as a function of the attributes.