公开(公告)号：US5985741A

公开(公告)日：1999-11-16

申请号：US821656

申请日：1997-03-20

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/78654 ,  H01L29/78675 ,  H01L21/2022

摘要： A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.

公开(公告)号：US5962870A

公开(公告)日：1999-10-05

申请号：US467984

申请日：1995-06-06

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L29/78 ,  G02F1/1362 ,  H01L21/265 ,  H01L21/336 ,  H01L21/60 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L29/76 ,  H01L27/01

CPC分类号： H01L29/04 ,  H01L21/76897 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245

摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.

摘要翻译： 制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。 首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。 然后对栅电极进行阳极氧化，形成包围电极的氧化膜。 以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

公开(公告)号：USRE36314E

公开(公告)日：1999-09-28

申请号：US620857

申请日：1996-06-04

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/60 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036 ,  H01L27/01 ,  H01L29/76

CPC分类号： H01L27/1214 ,  H01L21/76897 ,  H01L27/1229 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245

摘要： An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide film may be provided to cover the surface of the gate electrode, formed by anodizing the surface of the gate electrode, and this layer may be used as a mask when forming the crystallinity offset regions.

摘要翻译： IGFET在源极沟道和漏极 - 沟道边界附近的偏移区域具有差分结晶度。 在一个实施例中，具有与相邻区域不同的结晶度的偏移区域设置在沟道和源极和漏极区域中的至少一个之间。 可以提供氧化物膜以覆盖通过阳极氧化栅电极的表面形成的栅电极的表面，并且该层可以在形成结晶偏移区域时用作掩模。

公开(公告)号：US5930608A

公开(公告)日：1999-07-27

申请号：US682414

申请日：1996-07-17

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： A semiconductor device which is excellent in reliability and electrical characteristics. The semiconductor device is formed on an insulating substrate. A channel region is formed between a source and a drain by the voltage applied to a gate electrode. The channel region, the source, and the drain are fabricated from a semiconductor having a large mobility. The other regions including the portion located under the channel region are fabricated from a semiconductor having a small mobility.

摘要翻译： 具有优异的可靠性和电特性的半导体器件。 半导体器件形成在绝缘基板上。 通过施加到栅电极的电压在源极和漏极之间形成沟道区。 沟道区，源极和漏极由具有大迁移率的半导体制造。 包括位于沟道区下方的部分的其它区域由具有小迁移率的半导体制造。

公开(公告)号：US5929464A

公开(公告)日：1999-07-27

申请号：US588809

申请日：1996-01-19

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuhiko Takemura

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L29/04 ,  H01L31/0392

CPC分类号： H01L29/78645 ,  H01L27/1214 ,  G02F1/136259

摘要： In an active matrix display unit, a plurality of thin-film transistors are connected in series for one pixel electrode as a switching element, and at least one of the thin-film transistors connected in series except for thin-film transistors at both ends thereof is always made in an on-state, to thereby constitute a resistance component and a capacitance component between the thin-film transistors connected in series with the result that a leak current when the switching element is off is reduced.

摘要翻译： 在有源矩阵显示单元中，多个薄膜晶体管串联连接一个像素电极作为开关元件，并且至少一个薄膜晶体管串联连接，除了两端的薄膜晶体管 总是形成导通状态，从而构成串联连接的薄膜晶体管之间的电阻分量和电容分量，结果是当开关元件断开时的漏电流减小。

公开(公告)号：US5913112A

公开(公告)日：1999-06-15

申请号：US209063

申请日：1994-03-11

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L29/78 ,  G02F1/1362 ,  H01L21/265 ,  H01L21/336 ,  H01L21/60 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/04 ,  H01L21/76897 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245

摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.

摘要翻译： 制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。 首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。 然后对栅电极进行阳极氧化，形成包围电极的氧化膜。 以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

公开(公告)号：US5891766A

公开(公告)日：1999-04-06

申请号：US721537

申请日：1996-09-26

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L27/12 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/41 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/84 ,  H01L21/2022 ,  H01L27/1255 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621 ,  H01L21/2026 ,  H01L29/66598 ,  H01L29/78681 ,  H01L29/78684

摘要： The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.

公开(公告)号：US5851862A

公开(公告)日：1998-12-22

申请号：US839940

申请日：1997-04-18

申请人： Hisashi Ohtani ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Shunpei Yamazaki

发明人： Hisashi Ohtani ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/324

CPC分类号： H01L21/2026 ,  H01L27/1214

摘要： A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400.degree. C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.

摘要翻译： 在基板上形成具有高导热性的材料如氮化铝的膜，然后形成硅膜。 当激光或与激光对应的强光照射到硅膜时，由于氮化铝膜吸收热量，所以在氮化铝膜附近的一部分硅膜立即固化。 然而，由于硅膜的另一部分的固化速度慢，所以结晶从氮化铝膜附近的部分进行。 当激光照射下的基板温度为400℃以上时，由于凝固速度降低，因此硅膜的结晶性提高。 此外，当基板薄时，硅膜的结晶度增加。

公开(公告)号：US5849043A

公开(公告)日：1998-12-15

申请号：US411973

申请日：1995-03-28

申请人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： B60R25/00 ,  E05B67/06 ,  E05B67/38 ,  H01L21/223 ,  H01L21/336 ,  H01L21/268 ,  H01L21/428

CPC分类号： H01L29/66757 ,  B60R25/066 ,  H01L21/223 ,  H01L27/14692 ,  Y10T29/41

摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.

摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。

公开(公告)号：US5828429A

公开(公告)日：1998-10-27

申请号：US419956

申请日：1995-04-10

申请人： Yasuhiko Takemura

发明人： Yasuhiko Takemura

IPC分类号： G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  G02F1/1314

CPC分类号： G02F1/13624 ,  G09G3/3648 ,  H01L27/1214 ,  H01L27/1251 ,  G02F1/1368 ,  G02F2001/136245 ,  G09G2300/0809

摘要： An electro-optical liquid crystal display suitable for displaying highly graded images. A plurality of pixels are arranged in a matrix and supplied with data signals through data lines extending in the column direction. Extending in the row direction are a plurality of addressing lines and a plurality of voltage signal lines. Each row is selected by activating by each of the addressing lines and supplied with a driving voltage from each of the voltage supplying lines.

摘要翻译： 适用于显示高分级图像的电光液晶显示器。 多个像素以矩阵形式布置，并通过沿列方向延伸的数据线提供数据信号。 在行方向上延伸有多条寻址线和多条电压信号线。 通过每个寻址线激活并且从每个电压提供线提供驱动电压来选择每一行。