公开(公告)号：US20160065212A1

公开(公告)日：2016-03-03

申请号：US14838373

申请日：2015-08-28

Applicant: Intel Corporation

Inventor： James A. McCall ,  Kuljit S. Bains

IPC: H03K19/00 ,  G11C7/10

CPC classification number: H03K19/0005 ,  G11C7/1045 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  G11C11/4074 ,  G11C11/4093

Abstract: Described herein are a method and an apparatus for dynamically switching between one or more finite termination impedance value settings to a memory input-output (I/O) interface of a memory in response to a termination signal level. The method comprises: setting a first termination impedance value setting for a termination unit of an input-output (I/O) interface of a memory; assigning the first termination impedance value setting to the termination unit when the memory is not being accessed; and switching from the first termination impedance value setting to a second termination impedance value setting in response to a termination signal level.

Abstract translation: 这里描述了一种用于响应于终止信号电平在存储器的存储器输入 - 输出（I / O）接口之间动态切换一个或多个有限终端阻抗值设置的方法和装置。 该方法包括：为存储器的输入输出（I / O）接口的终端单元设置第一终端阻抗值设置; 当所述存储器未被访问时，将所述第一终端阻抗值设置分配给所述终端单元; 以及响应于终止信号电平从第一终端阻抗值设置切换到第二终端阻抗值设置。

公开(公告)号：US09213491B2

公开(公告)日：2015-12-15

申请号：US14230338

申请日：2014-03-31

Applicant: Intel Corporation

Inventor： Christopher P. Mozak ,  Kuljit S. Bains

IPC: G06F12/00 ,  G06F13/00 ,  G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0608 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0625 ,  G06F3/0629 ,  G06F3/0634 ,  G06F3/0673 ,  G06F3/068 ,  G06F11/2094 ,  G06F2201/805 ,  G11C7/1045 ,  G11C7/24 ,  G11C29/025 ,  G11C29/46 ,  G11C29/50012 ,  G11C29/70 ,  G11C29/76 ,  G11C29/83

Abstract: In an embodiment, a memory device may contain device processing logic and a mode register. The mode register may a register that may specify a mode of operation of the memory device. A field in the mode register may hold a value that may indicate whether a command associated with the memory device is disabled. The value may be held in the field until either the memory device is power-cycled or reset. The device processing logic may acquire an instance of the command. The device processing logic may determine whether the command is disabled based on the value held by the mode register. The device processing logic may not execute the instance of the command if the device processing logic determines the command is disabled. If the device processing logic determines the command is not disabled, the device processing logic may execute the instance of the command.

Abstract translation: 在一个实施例中，存储器设备可以包含设备处理逻辑和模式寄存器。 模式寄存器可以是可以指定存储器件的操作模式的寄存器。 模式寄存器中的字段可以保存可以指示与存储器设备相关联的命令是否被禁用的值。 该值可以保持在现场，直到存储器件被上电或复位为止。 设备处理逻辑可以获取命令的实例。 设备处理逻辑可以基于模式寄存器保持的值来确定该命令是否被禁用。 如果设备处理逻辑确定该命令被禁用，则设备处理逻辑可能不执行该命令的实例。 如果设备处理逻辑确定命令未被禁止，则设备处理逻辑可以执行该命令的实例。

公开(公告)号：US20150279444A1

公开(公告)日：2015-10-01

申请号：US14440068

申请日：2013-11-22

Applicant: George VERGIS ,  Kuljit S. BAINS ,  James A. MCCALL ,  Ge CHANG ,  INTEL CORPORATION

Inventor： George Vergis ,  Kuljit S. Bains ,  James A. McCall ,  Ge Chang

IPC: G11C11/4074 ,  G11C7/10 ,  G06F13/16 ,  G11C11/408

CPC classification number: G11C11/4074 ,  G06F3/0604 ,  G06F3/0637 ,  G06F3/0673 ,  G06F13/1663 ,  G11C7/1057 ,  G11C7/1072 ,  G11C7/1084 ,  G11C7/109 ,  G11C8/06 ,  G11C11/408 ,  Y10T29/41

Abstract: Techniques and mechanisms for providing termination for a plurality of chips of a memory device. In an embodiment, a memory device is an integrated circuit (IC) package which includes a command and address bus and a plurality of memory chips each coupled thereto. Of the plurality of memory chips, only a first memory chip is operable to selectively provide termination to the command and address bus. Of the respective on-die termination control circuits of the plurality of memory chips, only the on-die termination control circuit of the first memory chip is coupled via any termination control signal line to any input/output (I/O) contact of the IC package. In another embodiment, the plurality of memory chips are configured in a series with one another, and wherein the first memory chip is located at an end of the series

Abstract translation: 用于为存储器件的多个芯片提供终端的技术和机制。 在一个实施例中，存储器件是集成电路（IC）封装，其包括命令和地址总线以及与其耦合的多个存储器芯片。 在多个存储器芯片中，只有第一存储器芯片可操作以选择性地提供对命令和地址总线的终止。 在多个存储器芯片的各个片上终端控制电路中，仅第一存储器芯片的片上终端控制电路经由任何终端控制信号线耦合到任何输入/输出（I / O）触点 IC封装。 在另一个实施例中，多个存储器芯片彼此串联配置，并且其中第一存储器芯片位于该系列的一端

公开(公告)号：US20140156923A1

公开(公告)日：2014-06-05

申请号：US13690523

申请日：2012-11-30

Applicant: Intel Corporation

Inventor： Kuljit S. Bains ,  John B. Halbert

IPC: G11C11/406

CPC classification number: G11C11/40611 ,  G06F13/1636 ,  G11C7/24 ,  G11C11/4078 ,  G11C11/408 ,  G11C29/50 ,  G11C29/50012

Abstract: Detection logic of a memory subsystem obtains a threshold for a memory device that indicates a number of accesses within a time window that causes risk of data corruption on a physically adjacent row. The detection logic obtains the threshold from a register that stores configuration information for the memory device, and can be a register on the memory device itself and/or can be an entry of a configuration storage device of a memory module to which the memory device belongs. The detection logic determines whether a number of accesses to a row of the memory device exceeds the threshold. In response to detecting the number of accesses exceeds the threshold, the detection logic can generate a trigger to cause the memory device to perform a refresh targeted to a physically adjacent victim row.

Abstract translation: 存储器子系统的检测逻辑获得存储器设备的阈值，该存储器设备指示在时间窗口内的数量的访问，导致物理上相邻的行上的数据损坏风险。 检测逻辑从存储器件的配置信息的寄存器获得阈值，并且可以是存储器件本身的寄存器和/或可以是存储器件所属的存储器模块的配置存储设备的条目 。 检测逻辑确定对存储器件的行的访问次数是否超过阈值。 响应于检测到的访问次数超过阈值，检测逻辑可以产生触发以使存储器件执行针对物理上相邻的受害者行的刷新。