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公开(公告)号：US10722729B2
公开(公告)日：2020-07-28
申请号：US15403651
申请日：2017-01-11
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Hariklia Deligianni , Shu-Jen Han , Edmund J. Sprogis
Abstract: A neural probe is presented for local neural optogenetics stimulation and neurochemistry recordings. The neural probe includes a probe body, a shank extending from the probe body to a tip, a plurality of micro light-emitting diodes (LEDs) positioned across a length of a first surface of the shank for providing neuron-affecting light, a plurality of carbon devices, and a plurality of carbon electrodes positioned across a length of a second surface of the shank, the second surface in opposed relation to the first surface. The plurality of carbon electrodes can be vertically aligned carbon nanotubes or vertically aligned carbon nanofibers. The plurality of carbon electrodes can also be horizontally aligned carbon nanotubes. The plurality of micro LEDs activate neurons and the plurality of vertically aligned carbon electrodes electrochemically record neurotransmitters.
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公开(公告)号：US10709346B2
公开(公告)日：2020-07-14
申请号：US15474198
申请日：2017-03-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han
IPC: A61B5/04 , A61B5/00 , A61B5/0478 , A61B5/145
Abstract: Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors. Embodiments also include a methods of forming flexible active electrode arrays including depositing a flexible polymer on a substrate. The methods also include forming a plurality of sensors on the flexible polymer and attaching a silicon-based chip to the flexible shank. The methods also include coating the flexible shank in a bioabsorbable material and cutting the shank and a portion of the bioabsorbable material from the substrate.
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公开(公告)号：US20200091433A1
公开(公告)日：2020-03-19
申请号：US16689371
申请日：2019-11-20
Applicant: International Business Machines Corporation
Inventor： Shu-Jen Han
IPC: H01L51/00 , C01B32/168
Abstract: Sub-lithographic structures configured for selective placement of carbon nanotubes and methods of fabricating the same generally includes alternating conformal first and second layers provided on a topographical pattern formed in a dielectric layer. The conformal layers can be deposited by atomic layer deposition or chemical vapor deposition at thicknesses less than 5 nanometers. A planarized surface of the alternating conformal first and second layers provides an alternating pattern of exposed surfaces corresponding to the first and second layer, wherein a width of at least a portion of the exposed surfaces is substantially equal to the thickness of the corresponding first and second layers. The first layer is configured to provide an affinity for carbon nanotubes and the second layer does not have an affinity such that the carbon nanotubes can be selectively placed onto the exposed surfaces of the alternating pattern corresponding to the first layer.
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公开(公告)号：US10588526B2
公开(公告)日：2020-03-17
申请号：US15268020
申请日：2016-09-16
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han
IPC: A61B5/00 , A61B5/04 , A61B5/0478 , A61B5/145
Abstract: Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors. Embodiments also include a methods of forming flexible active electrode arrays including depositing a flexible polymer on a substrate. The methods also include forming a plurality of sensors on the flexible polymer and attaching a silicon-based chip to the flexible shank. The methods also include coating the flexible shank in a bioabsorbable material and cutting the shank and a portion of the bioabsorbable material from the substrate.
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公开(公告)号：US10481090B2
公开(公告)日：2019-11-19
申请号：US15918638
申请日：2018-03-12
Applicant: International Business Machines Corporation
Inventor： Abram L. Falk , Damon B. Farmer , Shu-Jen Han
IPC: G01N21/552 , G01N21/3504
Abstract: Differential, plasmonic, non-dispersive infrared gas sensors are provided. In one aspect, a gas sensor includes: a plasmonic resonance detector including a differential plasmon resonator array that is resonant at different wavelengths of light; and a light source incident on the plasmonic resonance detector. The differential plasmon resonator array can include: at least one first set of plasmonic resonators interwoven with at least one second set of plasmonic resonators, wherein the at least one first set of plasmonic resonators is configured to be resonant with light at a first wavelength, and wherein the at least one second set of plasmonic resonators is configured to be resonant with light at a second wavelength. A method for analyzing a target gas and a method for forming a plasmonic resonance detector are also provided.
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Patent Agency Ranking
公开(公告)号：US10446398B2
公开(公告)日：2019-10-15
申请号：US16042405
申请日：2018-07-23
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Qing Cao , Shu-Jen Han , Ning Li , Jianshi Tang
IPC: H01L21/28 , H01L29/49 , H01L29/66 , H01L29/51 , H01L21/265 , H01L29/08 , H01L29/78 , H01L21/3205 , H01L29/40 , B82Y10/00 , H01L29/775 , H01L29/06
Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.
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公开(公告)号：US10396300B2
公开(公告)日：2019-08-27
申请号：US14957664
申请日：2015-12-03
Applicant: International Business Machines Corporation
Inventor： Shu-Jen Han , Jianshi Tang
Abstract: A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the gate dielectric. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. The openings expose portions of the gate dielectric and end portions of the channel material under the patterned resist layer. Metal contacts are formed at least within the openings. The metal contacts include a portion that contacts the end portions of the channel material and the portions of the gate dielectric exposed within the openings.
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公开(公告)号：US10340002B1
公开(公告)日：2019-07-02
申请号：US15941558
申请日：2018-03-30
Applicant: International Business Machines Corporation
Inventor： Seyoung Kim , Hyung-Min Lee , Tayfun Gokmen , Shu-Jen Han
Abstract: A resistive processing unit (RPU) device includes a weight storage device to store a weight voltage which corresponds to a weight value of the RPU device, and a read transistor having a gate connected to the weight storage device, and first and second source/drain terminals connected to first and second control ports, respectively. A current source connected to the second source/drain terminal generates a fixed reference current. The read transistor generates a weight current in response to the weight voltage. A read current output from the second control port represents a signed weight value of the RPU device. A magnitude of the read current is equal to a difference between the weight current and the fixed reference current. The sign of the read current is positive when the weight current is greater than the fixed reference current, and negative when the weight current is less than the fixed reference current.
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公开(公告)号：US20190173016A1
公开(公告)日：2019-06-06
申请号：US16266580
申请日：2019-02-04
Applicant: International Business Machines Corporation
Inventor： Martin M. Frank , Shu-Jen Han , George S. Tulevski
CPC classification number: H01L51/0049 , H01L51/0048 , H01L51/0575 , H01L51/102 , H01L2251/301 , H01L2251/303 , Y10S977/938
Abstract: A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.
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公开(公告)号：US20190165289A1
公开(公告)日：2019-05-30
申请号：US16247326
申请日：2019-01-14
Applicant: International Business Machines Corporation
Inventor： Ali Afzali-Ardakani , Sarunya Bangsaruntip , Shu-Jen Han , HsinYu Tsai
CPC classification number: H01L51/0558 , H01L51/0003 , H01L51/0012 , H01L51/0049 , H01L51/0093 , H01L51/0545 , H01L2251/303
Abstract: In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.
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