公开(公告)号：US20110121244A1

公开(公告)日：2011-05-26

申请号：US12067465

申请日：2006-09-14

申请人： Koki Yano ,  Kazuyoshi Inoue ,  Nobuo Tanaka ,  Tokie Tanaka

发明人： Koki Yano ,  Kazuyoshi Inoue ,  Nobuo Tanaka ,  Tokie Tanaka

IPC分类号： H01B1/02 ,  C23C14/34 ,  C23F1/16 ,  C04B35/64

CPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6262 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/664 ,  C04B2235/763 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/963 ,  C23C14/086 ,  C23C14/3414 ,  Y10T428/24777

摘要： A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.

摘要翻译： 包括铟，锡，锌和氧的溅射靶，并且包括六方层状化合物，尖晶石结构化合物和双峰结构化合物。

公开(公告)号：US20100320457A1

公开(公告)日：2010-12-23

申请号：US12744380

申请日：2008-11-21

申请人： Masahito Matsubara ,  Kazuyoshi Inoue ,  Koki Yano ,  Yuki Igarashi

发明人： Masahito Matsubara ,  Kazuyoshi Inoue ,  Koki Yano ,  Yuki Igarashi

IPC分类号： H01L29/22 ,  H01L21/465 ,  H01L21/336 ,  C09K13/00

CPC分类号： H01L21/32134 ,  C23F1/02 ,  C23F1/32 ,  C23F1/44 ,  G02F1/13439 ,  G02F2001/134372 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： Provided is an etching solution composition for selectively etching a metal film, which is composed of Al, Al alloy or the like and is arranged on an amorphous oxide film, from a laminated film including the metal film and an amorphous oxide film of various types. The etching solution composition is used for selectively etching the metal film from the laminated film which includes the amorphous oxide film and the metal film composed of Al, Al alloy, Cu, Cu alloy, Ag or Ag alloy, and is composed of an aqueous solution containing an alkali.

摘要翻译： 本发明提供一种蚀刻溶液组合物，用于从由包括金属膜和各种类型的无定形氧化物膜的层压膜选择性地蚀刻由Al，Al合金等构成并且被布置在非晶氧化物膜上的金属膜。 蚀刻溶液组合物用于从包括无定形氧化物膜和由Al，Al合金，Cu，Cu合金，Ag或Ag合金构成的金属膜的层压膜上选择性地蚀刻金属膜，并且由水溶液 含有碱。

公开(公告)号：US20100285632A1

公开(公告)日：2010-11-11

申请号：US12839922

申请日：2010-07-20

申请人： Kazuyoshi INOUE ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

发明人： Kazuyoshi INOUE ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

IPC分类号： H01L21/44

CPC分类号： H01L29/7869 ,  G02F1/136286 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/50 ,  G02F2203/09 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45

摘要： An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.

公开(公告)号：US20100283055A1

公开(公告)日：2010-11-11

申请号：US12095681

申请日：2006-11-30

申请人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

发明人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

IPC分类号： H01L29/786 ,  H01L21/34 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288

摘要： An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.

摘要翻译： 本发明的目的是提供一种TFT基板和TFT基板的制造方法，其能够通过减少制造工序中的工序数和提高生产率而大大降低生产成本。 TFT基板包括：基板; 在基板上形成的第一氧化物层; 形成在所述第一氧化物层上方的第二氧化物层，其间插入有沟道部分; 在所述基板上形成的栅极绝缘膜，所述第一氧化物层和所述第二氧化物层; 形成在栅极绝缘膜上方的栅电极和栅极线。

公开(公告)号：US20100163876A1

公开(公告)日：2010-07-01

申请号：US12278894

申请日：2007-01-16

申请人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

发明人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

IPC分类号： H01L27/088 ,  H01L21/28

CPC分类号： H01L29/7869 ,  G02F1/133553 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/45

摘要： A reflective TFT substrate which can be operated for a prolonged period of time due to the presence of a protective insulating film, is free from occurrence of crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the production steps in the production process. A reflective TFT substrate 1 comprises a substrate 10; a gate electrode 23 and a gate wire 24; a gate insulating film 30; an n-type oxide semiconductor layer 40; a metal layer 60 formed with a channel part 41 interposed therebetween; and a protective insulating film 80 which covers the upper part of the glass substrate 10 on which a pixel electrode 67, a drain wire pad 68 and a gate wire pad 25 are exposed, wherein the metal layer 60 functions at least as a source wire 65, a drain wire 66, a source electrode 63, a drain electrode 64 and the pixel electrode 67.

摘要翻译： 由于存在保护绝缘膜而能够长时间运转的反射型TFT基板不会发生串扰，并且能够通过减少制造工序中的制造工序而显着地降低制造成本。 反射型TFT基板1包括基板10; 栅电极23和栅极线24; 栅极绝缘膜30; n型氧化物半导体层40; 形成有介于其间的通道部41的金属层60; 以及覆盖玻璃基板10的上部的保护绝缘膜80，其上露出有像素电极67，漏极线焊盘68和栅极线焊盘25，其中金属层60至少起到源极线65的作用 漏极线66，源电极63，漏极电极64和像素电极67。

公开(公告)号：US20090267064A1

公开(公告)日：2009-10-29

申请号：US12093827

申请日：2006-10-16

申请人： Koki Yano ,  Kazuyoshi Inoue ,  Nobuo Tanaka ,  Tokie Tanaka

发明人： Koki Yano ,  Kazuyoshi Inoue ,  Nobuo Tanaka ,  Tokie Tanaka

IPC分类号： H01L29/786 ,  H01L29/26 ,  H01L21/336

CPC分类号： H01L29/7869 ,  C01G19/00 ,  C01P2006/40

摘要： The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 eV or more. Then, the amorphous film is oxidized to form a transparent semiconductor thin film 40.

摘要翻译： 本发明提供了即使在柔性树脂基板上也能够在相对低的温度下制造的半导体薄膜。 作为具有低载流子浓度，高霍尔迁移率和大能带隙的半导体薄膜，形成含有氧化锌和氧化锡的非晶体膜，以获得10 + 17cm-3以下的载流子密度，Hall 迁移率为2cm 2 / V·sec以上，能带隙为2.4eV以上。 然后，非晶膜被氧化以形成透明半导体薄膜40。

公开(公告)号：US20090104379A1

公开(公告)日：2009-04-23

申请号：US12159153

申请日：2006-12-11

申请人： Satoshi Umeno ,  Kazuyoshi Inoue ,  Koki Yano ,  Katsunori Honda ,  Masato Matsubara

发明人： Satoshi Umeno ,  Kazuyoshi Inoue ,  Koki Yano ,  Katsunori Honda ,  Masato Matsubara

IPC分类号： C09K19/00 ,  G02F1/1343

CPC分类号： G02F1/13439 ,  G02F2203/01 ,  Y10T428/1064

摘要： A transparent electrode film including an oxide containing indium, zinc and tin and having a thickness of 25 nm or less. A transparent electrode film including an oxide containing indium and zinc and having a thickness of 30 nm or less.

摘要翻译： 一种透明电极膜，其包含含有铟，锌和锡的氧化物，其厚度为25nm以下。 一种透明电极膜，其包含含有铟和锌的氧化物，其厚度为30nm以下。

公开(公告)号：US20120093712A1

公开(公告)日：2012-04-19

申请号：US13264457

申请日：2010-11-18

申请人： Koki Yano ,  Masayuki Itose ,  Mami Nishimura

发明人： Koki Yano ,  Masayuki Itose ,  Mami Nishimura

IPC分类号： C23C14/08 ,  C01G15/00 ,  C23C14/34

CPC分类号： C04B35/453 ,  C04B35/6455 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5409 ,  C04B2235/604 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414

摘要： A sputtering target including oxide A shown below and indium oxide (In2O3) having a bixbyite crystal structure:Oxide A: an oxide which includes an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays).

摘要翻译： 包含下述氧化物A的溅射靶和具有双晶晶体结构的氧化铟（In 2 O 3）：氧化物A：包含铟元素（In），镓元素（Ga）和锌元素（Zn）的氧化物，其中衍射 在X射线衍射测量中，对应于入射角（2θ）的位置观察到峰值为7.0°至8.4°，30.6°至32.0°，33.8°至35.8°，53.5°至56.5°和56.5°至59.5° （CuKα射线）。

公开(公告)号：US08129714B2

公开(公告)日：2012-03-06

申请号：US11806995

申请日：2007-06-05

申请人： Koki Yano ,  Hajime Nakanotani ,  Chihaya Adachi

发明人： Koki Yano ,  Hajime Nakanotani ,  Chihaya Adachi

IPC分类号： H01L51/00

CPC分类号： H01L51/0545 ,  H01L51/0525 ,  H01L51/0562 ,  H01L51/0587

摘要： A semiconductor device including a semiconductor 1, a first electrode 2, an insulating layer 3 interposed between the semiconductor 1 and the first electrode 2, the second electrode 4 which is in contact with the semiconductor 1 and is detached from the first electrode 2, and the third electrode 5 which is in contact with the semiconductor 1 and is detached from the first electrode 2 and the second electrode 4, wherein the semiconductor 1 is provided with the organic semiconductor layer 10 and the oxide semiconductor layer 11.

摘要翻译： 包括半导体1，第一电极2，介于半导体1和第一电极2之间的绝缘层3，与半导体1接触并与第一电极2分离的第二电极4的半导体器件，以及 与半导体1接触并与第一电极2和第二电极4分离的第三电极5，其中半导体1设置有有机半导体层10和氧化物半导体层11。

公开(公告)号：US20080242793A1

公开(公告)日：2008-10-02

申请号：US10592718

申请日：2005-03-23

申请人： Koki Yano

发明人： Koki Yano

IPC分类号： C08K3/04

CPC分类号： C08L51/06 ,  C08K3/04 ,  C08K7/06 ,  C08L23/10 ,  C08L2205/16 ,  C08L23/02 ,  C08L2666/02 ,  C08L2666/04

摘要： Disclosed is a fiber-reinforced polyolefin resin composition containing (A) 1-20 mass % of carbon fibers having a fiber diameter of 3-20 μm, (B) 3-50 mass % of black lead (graphite) having an average particle diameter of 1-100 μm, and (C) 25-95 mass % of a polyolefin resin, wherein the mass ratio of the black lead (graphite) (B) (Wg) to the carbon fibers (A) (Wcf), namely mass ratio (Wg/Wcf), is 1-10. Also disclosed is a molded body of such a fiber-reinforced polyolefin resin composition.

摘要翻译： 公开了一种纤维增强聚烯烃树脂组合物，其含有（A）1-20质量％的纤维直径为3-20μm的碳纤维，（B）3-50质量％的具有平均粒径的黑色铅（石墨） （C）25-95质量％的聚烯烃树脂，其中黑铅（石墨）（B）（Wg）与碳纤维（A）的质量比（Wcf），即质量 （Wg / Wcf）为1-10。 还公开了这种纤维增强聚烯烃树脂组合物的成型体。