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公开(公告)号：US20090104379A1
公开(公告)日：2009-04-23
申请号：US12159153
申请日：2006-12-11
申请人： Satoshi Umeno , Kazuyoshi Inoue , Koki Yano , Katsunori Honda , Masato Matsubara
发明人： Satoshi Umeno , Kazuyoshi Inoue , Koki Yano , Katsunori Honda , Masato Matsubara
IPC分类号： C09K19/00 , G02F1/1343
CPC分类号： G02F1/13439 , G02F2203/01 , Y10T428/1064
摘要： A transparent electrode film including an oxide containing indium, zinc and tin and having a thickness of 25 nm or less. A transparent electrode film including an oxide containing indium and zinc and having a thickness of 30 nm or less.
摘要翻译： 一种透明电极膜，其包含含有铟，锌和锡的氧化物，其厚度为25nm以下。 一种透明电极膜，其包含含有铟和锌的氧化物，其厚度为30nm以下。
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公开(公告)号：US08957313B2
公开(公告)日：2015-02-17
申请号：US12162028
申请日：2007-01-16
IPC分类号： H01B13/00 , C23C14/08 , G02F1/1343 , H01J9/02 , G02F1/1362 , H01L51/52
CPC分类号： C23C14/086 , G02F1/13439 , G02F2001/13629 , H01J9/02 , H01L51/5206 , H01L51/5209
摘要： A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film, the transparent conductive thin film having a thickness of 35 nm or less.
摘要翻译： 包括透明导电薄膜和钼金属薄膜的多层结构，该透明导电薄膜的厚度为35nm以下。
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3.发明申请公开(公告)号：US20090008124A1
公开(公告)日：2009-01-08
申请号：US12162028
申请日：2007-01-16
IPC分类号： H01B5/00
CPC分类号： C23C14/086 , G02F1/13439 , G02F2001/13629 , H01J9/02 , H01L51/5206 , H01L51/5209
摘要： A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film, the transparent conductive thin film having a thickness of 35 nm or less.
摘要翻译： 包括透明导电薄膜和钼金属薄膜的多层结构，该透明导电薄膜的厚度为35nm以下。
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公开(公告)号：US07648657B2
公开(公告)日：2010-01-19
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
发明人： Kazuyoshi Inoue , Nobuo Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译： 溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。 一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。 相对于所有阳离子元素的总和为％以下。
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5.发明授权Amorphous transparent conductive film, target and production method for amorphous conductive film 有权无定形透明导电膜，非晶导电膜靶材及其制备方法公开(公告)号：US08153033B2
公开(公告)日：2012-04-10
申请号：US11908037
申请日：2006-03-07
申请人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
发明人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
CPC分类号： C23C16/407 , C23C14/3414 , C23C16/40
摘要： An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.
摘要翻译： 一种非晶透明导电膜，其以六氧化配位金属氧化物为主要成分，并且通过X射线散射测定获得的径向分布函数（RDF）满足A / B> 1的关系，条件是 在原子间距离为0.30nm至0.36nm处的RDF的最大值为A，原子间距离为0.36nm至0.42nm处的RDF的最大值为B.
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6.发明申请AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM 有权非晶透明导电膜，非晶导体膜的目标和生产方法公开(公告)号：US20090250668A1
公开(公告)日：2009-10-08
申请号：US11908037
申请日：2006-03-07
申请人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Tokie Tanaka , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
发明人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Tokie Tanaka , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
CPC分类号： C23C16/407 , C23C14/3414 , C23C16/40
摘要： An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.
摘要翻译： 一种非晶透明导电膜，其以六氧化配位金属氧化物为主要成分，并且通过X射线散射测定获得的径向分布函数（RDF）满足A / B> 1的关系，条件是 在原子间距离为0.30nm至0.36nm处的RDF的最大值为A，原子间距离为0.36nm至0.42nm处的RDF的最大值为B.
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公开(公告)号：US20090121199A1
公开(公告)日：2009-05-14
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
发明人： Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译： 溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。 一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。 相对于所有阳离子元素的总和为％以下。
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8.发明申请公开(公告)号：US20080239217A1
公开(公告)日：2008-10-02
申请号：US10591529
申请日：2005-02-18
IPC分类号： G02F1/1343 , H01L23/48 , H01L21/28
CPC分类号： G02F1/13439 , G02F1/133555
摘要： Provided are a semi-transmitting and semi-reflecting electrode substrate provided with a transparent conductive layer which is almost free from the generation of residues caused by etching and is resistant to an etchant for a metal reflecting layer (metal layer), a method of producing the semi-transmitting and semi-reflecting electrode substrate and a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. Specifically, the invention relates a semi-transmitting and semi-reflecting electrode substrate comprising a transparent substrate, a transparent conductive layer which is disposed on the transparent substrate and contains indium oxide as its major component and further one or two or more oxides selected from tungsten oxide, molybdenum oxide and niobium oxide and a metal reflecting layer which is disposed on the transparent substrate, reflects extraneous light and is connected with the transparent conductive layer, to a method producing the semi-transmitting and semi-reflecting electrode substrate and to a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. This semi-transmitting and semi-reflecting electrode substrate is almost free from the generation of residues, has high processability and improves the yield.
摘要翻译： 提供一种具有透明导电层的半透射半反射电极基板，其几乎不会产生由蚀刻引起的残留物，并且耐金属反射层（金属层）的蚀刻剂，制造方法 半透射半反射电极基板和使用半透射半反射电极基板的液晶显示装置。 具体地说，本发明涉及一种半透射半反射电极基板，其包括透明基板，透明导电层，其设置在透明基板上并且包含氧化铟作为其主要成分，还有一种或两种以上选自钨 氧化物，氧化钼和铌氧化物以及设置在透明基板上的金属反射层，反射外部光并与透明导电层连接，制造半透射半反射电极基板和液体的方法 使用半透射和半反射电极基板的晶体显示装置。 这种半透射和半反射电极基质几乎没有残留物的产生，具有高加工性和提高产率。
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9.发明授权Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes 失效薄膜晶体管，薄膜晶体管基板，其制造方法，使用其的液晶显示器及相关的装置和工艺; 和溅射靶，使用该透明电极形成的透明导电膜，以及相关的器件和工艺公开(公告)号：US08507111B2
公开(公告)日：2013-08-13
申请号：US13219827
申请日：2011-08-29
CPC分类号： H01L29/78696 , C04B35/01 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C23C14/08 , C23C14/3414 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L23/53219 , H01L23/53247 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： Provided are transparent electroconductive films and transparent electroconductive glass substrates, which contain a transparent electroconductive film and a metal thin film over the glass substrate.
摘要翻译： 提供了透明导电膜和透明导电玻璃基板，其在玻璃基板上包含透明导电膜和金属薄膜。
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10.发明授权Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes 有权薄膜晶体管，薄膜晶体管基板，其制造方法，使用其的液晶显示器及相关的装置和工艺; 和溅射靶，使用该透明电极形成的透明导电膜，以及相关的器件和工艺公开(公告)号：US08038857B2
公开(公告)日：2011-10-18
申请号：US10592280
申请日：2005-03-02
IPC分类号： C23C14/08
CPC分类号： H01L29/78696 , C04B35/01 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C23C14/08 , C23C14/3414 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L23/53219 , H01L23/53247 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
摘要翻译： 提供了具有透明导电膜的薄膜晶体管基板，其中几乎不产生所得到的蚀刻残留物等; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。 一种薄膜晶体管基板，包括透明基板，形成在所述透明基板上的源电极，形成在所述透明基板上的漏电极和形成在所述透明基板上的透明像素电极，其中所述透明像素电极是透明导电膜 其主要由氧化铟制成，并且还包含一种或两种以上选自氧化钨，氧化钼，氧化镍和氧化铌的氧化物，透明像素电极与源电极或漏电极电连接; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。
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