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1024 条记录 (耗时 0.033 秒)

    Method for making thin film transistor
    95.
    发明申请
    Method for making thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US20090298239A1

    公开(公告)日：2009-12-03

    申请号：US12384310

    申请日：2009-04-02

    申请人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L21/336

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  Y10S977/938

    摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.

    摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。 源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

    Thermoacoustic device
    96.
    发明申请
    Thermoacoustic device 有权
    热声装置

    公开(公告)号：US20090296528A1

    公开(公告)日：2009-12-03

    申请号：US12455606

    申请日：2009-06-04

    申请人： Kai-Li Jiang ,  Lin Xiao ,  Zhuo Chen ,  Shou-Shan Fan ,  Chen Feng ,  Yuan-Chao Yang

    发明人： Kai-Li Jiang ,  Lin Xiao ,  Zhuo Chen ,  Shou-Shan Fan ,  Chen Feng ,  Yuan-Chao Yang

    IPC分类号： B06B1/00

    CPC分类号： H04R23/002 ,  B06B1/02

    摘要： An apparatus includes an electromagnetic signal device, a medium, and a sound wave generator. The sound wave generator includes a carbon nanotube structure. The electromagnetic signal device transmits an electromagnetic signal to the carbon nanotube structure. The carbon nanotube structure converts the electromagnetic signal into heat. The heat transfers to the medium and causes a thermoacoustic effect.

    摘要翻译： 一种装置包括电磁信号装置，介质和声波发生器。 声波发生器包括碳纳米管结构。 电磁信号装置向碳纳米管结构发送电磁信号。 碳纳米管结构将电磁信号转换成热。 热传递到介质并引起热声效应。

    ELECTRON EMISSION DEVICE COMPRISING CARBON NANOTUBES YARN AND METHOD FOR GENERATING EMISSION CURRENT
    97.
    发明申请
    ELECTRON EMISSION DEVICE COMPRISING CARBON NANOTUBES YARN AND METHOD FOR GENERATING EMISSION CURRENT 有权
    包含碳纳米管丝的电子发射装置和用于产生排放电流的方法

    公开(公告)号：US20090289555A1

    公开(公告)日：2009-11-26

    申请号：US11478406

    申请日：2006-06-28

    申请人： Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

    IPC分类号： H01J1/14 ,  H05B41/14

    CPC分类号： H01J1/14 ,  H01J1/15 ,  H01J1/20 ,  H01J1/304 ,  H01J2201/19 ,  H01J2201/196 ,  H01J2201/30449 ,  H01J2201/30469 ,  H01J2201/30496

    摘要： An exemplary electron emission device includes an electron emitter, an anode opposite to and spaced apart from the electron emitter, a first power supply circuit, and a second power supply circuit. The first power supply circuit is configured for electrically connecting the electron emitter and the anode with a power supply to generate an electric field between the electron emitter and the anode. The second power supply circuit is configured for electrically connecting the electron emitter with a power supply to supply a heating current for heating the electron emitter whereby electrons emit therefrom. Methods for generating an emission current with a relatively higher stability also are provided.

    摘要翻译： 示例性的电子发射装置包括电子发射极，与电子发射极相对且间隔开的阳极，第一电源电路和第二电源电路。 第一电源电路被配置为用电源电连接电子发射器和阳极，以在电子发射器和阳极之间产生电场。 第二电源电路被配置为将电子发射器与电源电连接以提供用于加热电子发射器的加热电流，从而电子从其发射。 还提供了用于产生具有相对较高稳定性的发射电流的方法。

    Method for making thin film transistor
    98.
    发明申请
    Method for making thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US20090286362A1

    公开(公告)日：2009-11-19

    申请号：US12384245

    申请日：2009-04-02

    申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L21/336

    CPC分类号： H01L51/102 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/842 ,  Y10S977/932

    摘要： A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.

    摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供生长衬底; 在生长衬底上施加催化剂层; 在其中具有保护气体的炉中用催化剂层加热生长衬底，以100:1至100:10的比例供应碳源气体和载气，并在生长衬底上生长碳纳米管层; 形成源电极，漏电极和栅电极; 并且用绝缘层覆盖碳纳米管层，其中源电极和漏电极电连接到单壁碳纳米管层，栅电极与单壁碳纳米管层相对并与其电绝缘。

    METHOD FOR MANUFACTURING CARBON NANOTUBES
    99.
    发明申请
    METHOD FOR MANUFACTURING CARBON NANOTUBES 有权
    制备碳纳米管的方法

    公开(公告)号：US20090272490A1

    公开(公告)日：2009-11-05

    申请号：US11484396

    申请日：2006-07-11

    申请人： Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

    发明人： Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC分类号： D01F9/12 ,  B29C65/00

    CPC分类号： B82Y40/00 ,  B01J23/74 ,  B01J37/0215 ,  B82Y30/00 ,  C01B32/162 ,  Y10T156/1089

    摘要： A method for manufacturing open-ended carbon nanotubes is described. The method includes steps of: providing a substrate having a catalyst layer formed thereon; placing the substrate in a reaction chamber; introducing a carbon source gas containing carbon element into the reaction chamber for growing carbon nanotubes form the catalyst layer; promptly reducing a concentration of the carbon source gas when the growth of carbon nanotubes in process, thereby ceasing the growth of the carbon nanotubes instantly; and separating the carbon nanotubes from the catalyst layer.

    摘要翻译： 描述了制造开放式碳纳米管的方法。 该方法包括以下步骤：提供其上形成有催化剂层的基板; 将基板放置在反应室中; 将碳元素的碳源气体引入用于生长碳纳米管的反应室中形成催化剂层; 在碳纳米管生长过程中迅速降低碳源气体的浓度，从而立即停止碳纳米管的生长; 并从催化剂层分离碳纳米管。

    Method for making liquid crystal display screen
    100.
    发明申请
    Method for making liquid crystal display screen 有权
    制作液晶显示屏的方法

    公开(公告)号：US20090269684A1

    公开(公告)日：2009-10-29

    申请号：US12313414

    申请日：2008-11-20

    申请人： Wei-Qi Fu ,  Liang Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

    发明人： Wei-Qi Fu ,  Liang Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/1337 ,  B82Y20/00 ,  G02F1/133305 ,  G02F1/13439 ,  G02F2001/133765 ,  G02F2001/133796 ,  G02F2202/36

    摘要： A method for making a liquid crystal display screen includes the following steps. Firstly, providing a base including a surface. Secondly, forming carbon nanotube structure on the surface of the base to obtain a first electrode plate preform, the carbon nanotubes of each carbon nanotube structure being oriented along the extending direction thereof. Thirdly, forming a fixing layer to cover the carbon nanotube structure, thereby obtaining a first electrode plate. Fourthly, repeating the above-described steps, thereby obtaining a second electrode plate. Lastly, forming a liquid crystal layer between the fixing layers of the first electrode plate and the second electrode plate, the carbon nanotubes of the first electrode plate being perpendicular to that of the second electrode plate, thereby forming the liquid crystal display screen.

    摘要翻译： 制造液晶显示屏的方法包括以下步骤。 首先，提供包括表面的基底。 其次，在基体表面上形成碳纳米管结构，得到第一电极板预制件，每个碳纳米管结构的碳纳米管沿其延伸方向取向。 第三，形成覆盖碳纳米管结构的固定层，从而获得第一电极板。 第四，重复上述步骤，从而获得第二电极板。 最后，在第一电极板和第二电极板的固定层之间形成液晶层，第一电极板的碳纳米管与第二电极板的碳纳米管垂直，从而形成液晶显示屏。