公开(公告)号：US20050024769A1

公开(公告)日：2005-02-03

申请号：US10633105

申请日：2003-08-01

申请人： Cherng Han ,  Mao-Min Chen

发明人： Cherng Han ,  Mao-Min Chen

IPC分类号： G11B5/147 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/3106 ,  Y10T29/49032

摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention a layer of alumina is deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a two coil planar magnetic write head is described.

摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，一层氧化铝沉积在多余的光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。 描述了该方法在制造双线圈平面磁性写入头上的应用。

公开(公告)号：US06583966B2

公开(公告)日：2003-06-24

申请号：US09956360

申请日：2001-09-20

申请人： Cherng-Chyi Han ,  Chyu Jiuh Torng ,  Mao-Min Chen

发明人： Cherng-Chyi Han ,  Chyu Jiuh Torng ,  Mao-Min Chen

IPC分类号： G11B5139

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3146 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49025 ,  Y10T29/49032

摘要： A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.

摘要翻译： 组合溅射和​​电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。 该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

公开(公告)号：US06517896B1

公开(公告)日：2003-02-11

申请号：US09633768

申请日：2000-08-07

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong

IPC分类号： B05D512

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/325 ,  Y10T29/49034 ,  Y10T29/49044

摘要： A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al2O3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data confirming the effectiveness of this structure is provided, together with a method for manufacturing it and, additionally, its longitudinal bias leads.

公开(公告)号：US06307721B1

公开(公告)日：2001-10-23

申请号：US09148558

申请日：1998-09-04

申请人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng T. Horng

发明人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng T. Horng

IPC分类号： G11B539

CPC分类号： G11B5/3954 ,  G11B5/3903

摘要： A magnetoresistive (MR) sensor element and a method for fabricating the magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a first shield layer. There is then formed upon the first shield layer a first dielectric spacer layer. There is then formed upon the first dielectric spacer layer a patterned magnetoresistive (MR) layer. There is then formed adjacent to and electrically communicating with a pair of opposite ends of the patterned magnetoresistive (MR) layer a pair of patterned conductor lead layers to define a trackwidth of the patterned magnetoresistive (MR) layer. There is then formed upon the pair of patterned conductor lead layers and upon the patterned magnetoresistive (MR) layer at the trackwidth of the patterned magnetoresistive (MR) layer a blanket second dielectric spacer layer. Finally, there is then formed upon the blanket second dielectric spacer layer a second shield layer, where a first thickness of the blanket second dielectric spacer layer separating a patterned conductor lead layer within the pair of patterned conductor lead layers from the second shield layer is greater than a second thickness of the blanket second dielectric spacer layer separating the patterned magnetoresistive (MR) layer from the second shield layer within the trackwidth of the patterned magnetoresistive (MR) layer. The method contemplates a magnetoresistive (MR) sensor element fabricated in accord with the method.

摘要翻译： 磁阻（MR）传感器元件和制造磁阻（MR）传感器元件的方法。 首先提供基板。 然后在衬底上形成第一屏蔽层。 然后在第一屏蔽层上形成第一电介质隔离层。 然后在第一电介质隔离层上形成图案化磁阻（MR）层。 然后形成为与图案化磁阻（MR）层的一对相对端相邻并与其电连通一对图案化的导体引线层，以限定图案化磁阻（MR）层的轨道宽度。 然后形成在一对图案化导体引线层上，并且在图案化磁阻（MR）层的轨道宽度处的图案化磁阻（MR）层上形成毯式第二介电隔离层。 最后，然后在第二绝缘间隔层上形成第二屏蔽层，其中第一厚度的第二绝缘隔离层将第一屏蔽层内的图案化导体引线层中的图案化导体引线层分离， 比在图案化磁阻（MR）层的轨道宽度内将图案化磁阻（MR）层与第二屏蔽层分离的第二厚度的第二介电隔离层的厚度。 该方法考虑了根据该方法制造的磁阻（MR）传感器元件。

公开(公告)号：US06287476B1

公开(公告)日：2001-09-11

申请号：US09332429

申请日：1999-06-14

申请人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

发明人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996

摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.

摘要翻译： 使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。 通过阳极氧化MR传感器形成钝化层。 钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。 该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。 然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。 蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。 然后我们在钝化层和MR传感器上沉积铅层。 去除剥离结构，其中钝化层限定轨道宽度。 钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。

公开(公告)号：US6103136A

公开(公告)日：2000-08-15

申请号：US46007

申请日：1998-03-23

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju

IPC分类号： G01R33/09 ,  G11B5/39 ,  B44C1/22

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

公开(公告)号：US6091589A

公开(公告)日：2000-07-18

申请号：US320756

申请日：1999-05-27

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

IPC分类号： G01R33/09 ,  G11B5/39 ,  G01B7/14

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/399 ,  G11B5/3932 ,  Y10T29/49044 ,  Y10T29/49046

摘要： Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.

摘要翻译： 在可以在磁头内使用的软相邻层（SAL）磁阻（MR）传感器元件中，首先采用衬底。 形成在衬底上的是软相邻层（SAL）。 另外，形成在软相邻层（SAL）上的是电介质层。 最后，至少部分地形成在电介质层上的是磁阻（MR）层。 在软相邻层（SAL）磁阻（MR）传感器元件内，软相邻层（SAL）和电介质层是平面的。 此外，在软相邻层（SAL）磁阻（MR）传感器元件内，磁阻（MR）层的上表面和磁阻（MR）层的下界面都是非平面的。

公开(公告)号：US5985162A

公开(公告)日：1999-11-16

申请号：US810059

申请日：1997-03-05

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Kochan Ju

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Kochan Ju

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12 ,  B44C1/22

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  H01L43/12 ,  G11B5/313 ,  G11B5/3163

摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the blanket dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method of the invention.

摘要翻译： 软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。 为了实践该方法，首先提供了一种衬底。 在衬底上形成介电层，其具有电介质层的第一表面和与电介质层的第一表面相对的电介质层的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 类似地，还在衬底上形成与橡皮布介电层的第二表面接触的软相邻层（SAL），其中磁阻（MR）层，软相邻层（SAL）和电介质层是平面的， 优选至少基本上共同扩展。 本发明设想通过本发明的方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

公开(公告)号：US5843521A

公开(公告)日：1998-12-01

申请号：US897796

申请日：1997-07-21

申请人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

发明人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

IPC分类号： G11B5/31 ,  G11B5/39 ,  B05D5/12

CPC分类号： G11B5/3967 ,  G11B5/3103 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3163 ,  Y10T428/1186 ,  Y10T428/265 ,  Y10T428/31678

摘要： A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.

摘要翻译： 一种用于形成磁换能器的方法，以及通过该方法形成的磁换能器。 首先提供基板。 然后在衬底上形成第一磁极层。 然后在第一磁极层上形成间隙填充介电层。 然后在填充介电层的间隙上形成种子层。 然后在种子层上形成光致抗蚀剂框架，该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法，其中光致抗蚀剂框架的侧壁的基部具有锥形，其在 电镀第二磁极层的边缘与其种子层的界面处。 然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上，其中籽晶层由厚度形成，并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿 由于镀覆的第二磁极层内的凹口，在第一磁极层和镀覆的第二磁极层之间。 用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。

公开(公告)号：US5668687A

公开(公告)日：1997-09-16

申请号：US593654

申请日：1996-01-29

申请人： Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

发明人： Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

IPC分类号： G11B5/39 ,  H01F10/32

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  G11B5/399 ,  H01F10/3218

摘要： An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.

摘要翻译： 交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。 铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。 反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。 有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。