摘要:
The semiconductor device of this invention includes: an array section including a plurality of circuit blocks; a leakage current cutoff section for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section; and a control section for controlling the leakage current cutoff section in accordance with leakage current cutoff information.
摘要:
A continuously variable transmission of an automobile which varies the drive ratio arbitrarily between an input axis and an output axis is combined with a traction control device for example which performs braking corresponding to vehicle running conditions and irrespective of the accelerator pedal depression. A microprocessor calculates the vehicle speed from the rotation speed of the output axis, calculates the target drive ratio depending on the vehicle speed, and controls the drive ratio of the continuously variable transmission to be equal to the target ratio. When the brake operation device performs braking, fluctuation of the drive ratio based on the rotation variation of the output axis is prevented by the correction of the drive ratio in the upshift direction.
摘要:
A current problem is that when a DRAM is to be accessed through a data bus, the DRAM is accessed independently of a bank, a row address, etc., and therefore, is inefficient. To solve this problem, an address bus and a data bus are connected to a main memory part independently of each other, a temporary memory part for holding a plurality of addresses in advance is disposed on the address bus side and holds addresses for every access to the main memory part regardless of transfer of data, thereby pipelining address inputting cycles. Further, for the purpose of an effective operation of the main memory part, using the addresses which are held, the addresses are rearranged in such a manner that addresses with the same row addresses become continuous to each other, or when there are not addresses with the same row addresses, addresses different banks from each other become continuous to each other, and the memory is thereafter accessed. This reduces the number of precharges, shortens a standby period which is necessary for a precharge, and realizes accessing while reducing a wasteful use of time.
摘要:
A semiconductor circuit includes an input, an output, and a first transistor and a second transistor coupled in series to a power source. The first transistor is coupled closer to the power source than the second transistor is, and the first transistor has a higher threshold voltage than a threshold voltage of the second transistor. The semiconductor circuit further includes a capacitor which is coupled between the first transistor and the second transistor.
摘要:
In plural internal logic circuits, plural transistors having the same function are merged into a single merged transistor. This merged transistor is interposed between a ground and a virtual ground line connected with a ground node of an inverter included in each of the internal logic circuits, and has a threshold voltage higher than a threshold voltage of a transistor included in each inverter. The merged transistor is controlled in accordance with a block selecting signal. Since the merged transistor is merged among the internal logic circuits, its gate width can be set larger, resulting in attaining a high speed operation of each inverter. During a standby, a leakage current can be suppressed since the merged transistor is in an off-state. During an operation, a leakage current can be suppressed in an unselected circuit block since the merged transistor is in an off-state. Accordingly, while suppressing increase of the circuit area, the internal logic circuits can attain a high speed operation and a leakage current can be minimized during both a standby and an operation.
摘要:
A semiconductor circuit includes an input, an output, and a first transistor and a second transistor coupled in series to a power source. The first transistor is coupled closer to the power source than the second transistor is, and the first transistor has a higher threshold voltage than a threshold voltage of the second transistor. The semiconductor circuit further includes a capacitor which in coupled between the first transistor and the second transistor.
摘要:
In order to provide an accurate traction control by closing a second throttle valve provided in series to an accelerator-operated ordinary throttle valve, with a simplified actuator, a control system for reducing a vehicle driving torque employs one or more sensors for sensing a second vehicle operating parameter representing a road surface friction coefficient (.mu.) or a driver's command for acceleration, in addition to sensors for sensing a first vehicle operating parameter representing a drive wheel slip. When the road surface friction coefficient is high or when the driver depresses the accelerator pedal hard, the control system restrains the closing operation of the second throttle valve in accordance with the second parameter even though the closure of the second throttle valve is requested by the first parameter.
摘要:
In halt period during standby time, a cell plate node potential switching circuit changes the potential of a cell plate node to a low potential that is lower than a high potential adopted in a burst refresh operation. As a result, a potential difference between both ends of a PN junction of a memory cell transistor is decreased, thereby suppressing a leakage current flowing through the PN junction. Simultaneously, a word driver circuit changes the potential of a word line to a negative potential that is lower than a normal potential adopted in the burst refresh operation. As a result, an off state of the memory cell transistor is enhanced owing to decrease of a gate-source voltage thereof, thereby suppressing a leakage current flowing from the bit line to a charge storage node. Accordingly, a leakage current flowing through the PN junction of the memory cell transistor and a leakage current flowing from the bit line through the memory cell transistor to the charge storage node are both suppressed during the standby time. Thus, a refresh interval is elongated so as to decrease power consumption.
摘要:
A semiconductor Integrated circuit apparatus that has memory cell array, and a refresh timer which outputs a refresh signal for holding data of the memory cell array. The apparatus also has a leak monitoring circuit for detecting a voltage drop associated with a leak current from the memory cell array of a main memory, and a pulse generating circuit for outputting the refresh signal. The leak monitoring circuit is formed by a dummy memory cell array, which is formed by memory cells having the same structure as the memory cells of the main memory, a potential comparator for comparing a potential which is outputted from the dummy memory cell array with a predetermined potential, and leak accelerating means for accelerating the potential decrease speed of the dummy memory cell array.
摘要:
A traction control apparatus for use with an automotive vehicle having an internal combustion engine through which an output drive is transmitted to drive road wheels. A demand for first traction control is produced based on a slippage produced on the drive road wheels during acceleration. The first traction control demand includes a normal demand for first traction control continuing for a time shorter than a limit time and an exceptional demand for first traction control continuing over the limit time. A limit value is set for the number of times the exceptional demand is permitted. In response to the first traction control demand, at least one of fuelcut control and ignition control is performed to reduce the engine output drive. The first traction control demand is ignored when the number of times the exceptional demand has occurred reaches the limit value.