公开(公告)号：US6090498A

公开(公告)日：2000-07-18

申请号：US950798

申请日：1997-10-15

申请人： Eiichi Omata ,  Satoru Araki ,  Masashi Sano ,  Yasuyuki Yamamoto

发明人： Eiichi Omata ,  Satoru Araki ,  Masashi Sano ,  Yasuyuki Yamamoto

IPC分类号： G11B5/39 ,  H01L43/08 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/3903 ,  Y10S428/90 ,  Y10T428/1121

摘要： In a magnetoresistance effect element, a pinning layer (antiferromagnetic layer) has a composition of Ru--Mn or Ru--M--Mn where M represents at least one selected from Rh, Pt, Pd, Au, Ag, and Re, and impurity concentrations of the pinning layer are regulated. Accordingly, there can be provided the magnetoresistance effect element having a magnetic multilayered film which is excellent in corrosion resistance, thermal stability and magnetic field sensitivity and has a large MR change ratio, as well as a magnetoresistance device, such as a magnetoresistance effect type head or the like, using such a magnetoresistance effect element.

摘要翻译： 在磁阻效应元件中，钉扎层（反铁磁层）具有Ru-Mn或Ru-M-Mn的组成，其中M表示选自Rh，Pt，Pd，Au，Ag和Re中的至少一种，杂质浓度 的钉扎层被调节。 因此，可以提供具有耐腐蚀性，热稳定性和磁场灵敏度优异，MR变化率大的磁性多层膜的磁电阻效应元件，以及诸如磁阻效应型磁头的磁阻效应元件 使用这种磁阻效应元件。

公开(公告)号：US6074743A

公开(公告)日：2000-06-13

申请号：US118363

申请日：1998-07-17

申请人： Satoru Araki ,  Daisuke Miyauchi

发明人： Satoru Araki ,  Daisuke Miyauchi

IPC分类号： G11B5/39 ,  G11B5/667 ,  H01F10/32 ,  H01L43/10 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01L43/10 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265

摘要： A magnetoresistance effect element according to the present invention comprises magnetic multilayer film having a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and a pinning layer which is formed on the ferromagnetic layer to pin a direction of magnetization of the ferromagnetic layer, wherein the ferromagnetic layer and the pinning layer are coupled to each other with epitaxial growth.Accordingly, the magnetoresistance device using the magnetoresistance effect element as described above exhibits an extremely large MR ratio and a linear rise-up characteristic of MR change in an extremely small range of applied magnetic field of about -10 to 10 Oe, and has high sensitivity to magnetic field, a large MR slope under a high-frequency magnetic field and an excellent heat resistance.

摘要翻译： 根据本发明的磁阻效应元件包括具有非磁性金属层的磁性多层膜，形成在非磁性金属层的一个表面上的铁磁层，形成在非磁性金属层的另一个表面上的软磁性层 金属层和钉扎层，其形成在铁磁层上以固定铁磁层的磁化方向，其中铁磁层和钉扎层通过外延生长彼此耦合。 因此，使用如上所述的磁阻效应元件的磁阻器件在大约-10至10Oe的施加磁场的极小范围内具有非常大的MR比和MR变化的线性上升特性，并且具有高灵敏度 到磁场，在高频磁场下具有大的MR斜率，并且具有优异的耐热性。

公开(公告)号：US5923504A

公开(公告)日：1999-07-13

申请号：US817098

申请日：1997-04-18

申请人： Satoru Araki ,  Yuichi Sato ,  Osamu Shinoura

发明人： Satoru Araki ,  Yuichi Sato ,  Osamu Shinoura

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3925 ,  G11B5/399 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/39 ,  G11B5/3932

摘要： According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO.sub.x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly excellent in corrosion resistance and has a magnetoresistance ratio with an MR slope no less than 0.7% Oe in the region of the high-frequency magnetic field of 1 MHz. Further, the rise-up characteristic of an MR curve at the zero magnetic field is extremely excellent with small hysteresis, and it has high heat resistance. The heat resistance is further improved by interposing an oxygen blocking layer between the pinning layer and a ferromagnetic layer. In the magnetoresistance device, for example, an MR head, using the magnetoresistance effect element having a magnetic multilayer film, an output voltage is approximately five times as high as that of the conventional material. Accordingly, there can be provided an excellent MR head which has extremely high reliability and enables the reading for ultrahigh density magnetic recording exceeding 1 Gbit/inch.sup.2.

摘要翻译： PCT No.PCT / JP96 / 02702 Sec。 371日期1997年4月18日 102（e）1997年4月18日PCT PCT 1996年9月19日PCT公布。 第WO97 / 11499号公报 日期1997年3月27日根据本发明，对具有磁阻效应元件的磁阻器件，由于使用具有反铁磁性的氧化铁FeOx作为钉扎层，因此可获得特别优异的自旋阀型磁电阻效应元件 并且在1MHz的高频磁场的区域中具有MR斜率不小于0.7％Oe的磁阻比。 此外，在零磁场下，MR曲线的上升特性非常优异，滞后小，耐热性高。 通过在钉扎层和铁磁层之间插入氧阻挡层来进一步提高耐热性。 在磁电阻器件中，例如，使用具有磁性多层膜的磁阻效应元件的MR磁头，输出电压大约是常规材料的5倍。 因此，可以提供极高的可靠性的极好的MR磁头，并能够读取超过1Gbit / inch2的超高密度磁记录。

公开(公告)号：US5783284A

公开(公告)日：1998-07-21

申请号：US594486

申请日：1996-01-31

申请人： Teruya Shinjo ,  Satoru Araki

发明人： Teruya Shinjo ,  Satoru Araki

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01F41/34 ,  H01L43/08 ,  G11B5/127 ,  B32B3/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/324 ,  H01F41/302 ,  H01F41/34 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/398 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/24355 ,  Y10T428/24405 ,  Y10T428/24413 ,  Y10T428/24537 ,  Y10T428/24545 ,  Y10T428/2457

摘要： In a magnetoresistance multilayer film comprising at least two magnetic layers on a substrate, with a nonmagnetic layer intervening between the magnetic layers, each interface between the magnetic layer and the nonmagnetic layer is corrugated in both X and Y directions of a substrate major surface. The corrugations of the interface are formed by providing the substrate surface with a multiplicity of asperities distributed in both X and Y directions and depositing magnetic layers and nonmagnetic layers thereon. The film shows a linear rise of MR change in an applied magnetic field within a very low range of 0 to about 40 Oe.

公开(公告)号：US5695693A

公开(公告)日：1997-12-09

申请号：US406567

申请日：1995-03-20

申请人： Kimio Koizumi ,  Satoru Araki ,  Yasuaki Kohira

发明人： Kimio Koizumi ,  Satoru Araki ,  Yasuaki Kohira

IPC分类号： F02M3/10 ,  F02M19/04 ,  F02M3/08

CPC分类号： F02M19/04 ,  F02M3/10 ,  F02M2003/105 ,  Y10S261/38 ,  Y10S261/84 ,  Y10T137/7062

摘要： A carburetor fuel adjusting device that facilitates control of the quantity of fuel that flows from the fuel chamber to an air intake port of a carburetor by making it possible for the user to adjust an adjustment valve within the limits defined by emission control regulations. The carburetor fuel adjusting device has a cap having two appendages to limit its turning in the lean mixture direction and in the rich mixture direction, and an engagement area to engage a valve extension of the fuel adjustment valves of a carburetor. The valve extensions are inserted through insertion holes of a retainer attached to the carburetor body. When the cap is retained by the retainer in a disengaged position, wherein the engagement area is not attached to the valve extensions of the fuel adjustment valves, the adjustment valves can be adjusted separately from the cap. The cap, however, can be moved forward to an engaged position wherein the engagement area of the cap becomes attached to the valve extensions. In the engaged position, the adjustment valves can be turned in unison with the cap within a range formed by the angle between the appendages which, when rotated, abut against stoppers.

摘要翻译： 一种化油器燃料调节装置，其使得用户可以在由排放控制规定限定的范围内调节调节阀，从而有助于控制从燃料室流向化油器的进气口的燃料量。 化油器燃料调节装置具有盖，其具有两个附件，以限制其在稀混合方向和富混合方向上的转动;以及接合区域，用于接合化油器的燃料调节阀的阀延伸。 阀门延伸部分通过连接在化油器主体上的保持架的插入孔插入。 当盖被保持器保持在脱离位置时，其中接合区域没有附接到燃料调节阀的阀延伸部，所以调节阀可以与盖分开调节。 然而，盖可以向前移动到接合位置，其中盖的接合区域附接到阀延伸部。 在接合位置，调节阀可以在由旋转时抵靠止动件的附件之间的角度形成的范围内与盖一起转动。

公开(公告)号：US20120156390A1

公开(公告)日：2012-06-21

申请号：US12975084

申请日：2010-12-21

申请人： Satoru Araki ,  Shin Funada ,  Insik Jin ,  Quang Le ,  Simon H. Liao ,  Chang-Man Park

发明人： Satoru Araki ,  Shin Funada ,  Insik Jin ,  Quang Le ,  Simon H. Liao ,  Chang-Man Park

IPC分类号： B05D3/06 ,  B05D3/10 ,  B05D5/00

CPC分类号： G01R33/098 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/398 ,  H01F10/123 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

摘要： A method for manufacturing a magnetic sensor that result in improved magnetic bias field to the sensor, improved shield to hard bias spacing and a flatter top shield profile. The method includes a multi-angled deposition of the hard bias structure. After forming the sensor stack a first hard bias layer is deposited at an angle of about 70 degrees relative to horizontal. This is a conformal deposition. Then, a second deposition is performed at an angle of about 90 degrees relative to horizontal. This is a notching deposition, that results in notches being formed adjacent to the sensor stack. Then, a hard bias capping layer is deposited at an angle of about 55 degrees relative to horizontal. This is a leveling deposition that further flattens the surface on which the top shield can be electroplated.

摘要翻译： 一种用于制造磁传感器的方法，其导致对传感器的改善的磁偏置场，改善了对硬偏置间隔的屏蔽和较平坦的顶部屏蔽轮廓。 该方法包括硬偏置结构的多角度沉积。 在形成传感器堆叠之后，第一硬偏压层以相对于水平面约70度的角度沉积。 这是一个保形沉积。 然后，以相对于水平方向大约90度的角度执行第二沉积。 这是一种凹陷沉积，导致在传感器堆叠附近形成凹口。 然后，相对于水平度以大约55度的角度沉积硬偏压盖层。 这是一种平整沉积物，其进一步平坦化可以电镀顶部屏蔽的表面。

公开(公告)号：US20120106006A1

公开(公告)日：2012-05-03

申请号：US12914926

申请日：2010-10-28

申请人： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

发明人： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

IPC分类号： G11B5/48 ,  G11B5/187

CPC分类号： G11B5/607 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3906 ,  G11B5/3967

摘要： A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.

摘要翻译： 磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。 由于改进了固定层钉扎，提高了热稳定性。 读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。 读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。 第一层包括Fe含量高于20-30原子％的Co-Fe层。 钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层 和在Co-Fe-B层上形成的第二层Co-Fe层。

公开(公告)号：US20100073826A1

公开(公告)日：2010-03-25

申请号：US12237220

申请日：2008-09-24

申请人： Satoru Araki ,  David John Seagle

发明人： Satoru Araki ,  David John Seagle

IPC分类号： G11B5/33 ,  C23F1/02

CPC分类号： G11B5/40 ,  G11B5/3906

摘要： A method for manufacturing a magnetic head with an electrostatic discharge resistor for preventing electrostatic discharge damage to magnetic head. The electrostatic discharge resistor is formed by a processes that saves manufacturing time and cost by forming resistor in the same deposition and patterning steps used to form the magnetoresistive sensor. However, the resistor includes only a portion of the layers used to form the magnetoresistive sensor, thereby ensuring that the resistor will have sufficient resistivity.

摘要翻译： 一种用于制造具有用于防止磁头的静电放电损坏的静电放电电阻器的磁头的方法。 静电放电电阻器通过在用于形成磁阻传感器的相同沉积和图案化步骤中形成电阻器来节省制造时间和成本的工艺形成。 然而，电阻器仅包括用于形成磁阻传感器的层的一部分，从而确保电阻器将具有足够的电阻率。

公开(公告)号：US07639457B1

公开(公告)日：2009-12-29

申请号：US10788765

申请日：2004-02-27

申请人： Yingjian Chen ,  Wei Zhang ,  Jinqiu Zhang ,  Haifeng Wang ,  Satoru Araki ,  Mohamad T. Krounbi

发明人： Yingjian Chen ,  Wei Zhang ,  Jinqiu Zhang ,  Haifeng Wang ,  Satoru Araki ,  Mohamad T. Krounbi

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3272

摘要： A magnetic sensor is disclosed comprising an antiferromagnetic layer; a first ferromagnetic layer disposed over the antiferromagnetic layer, the first ferromagnetic layer having a magnetization that is pinned by the antiferromagnetic layer; a second ferromagnetic layer disposed over the first ferromagnetic layer, the second ferromagnetic layer having a magnetization that rotates due to an applied magnetic field; a third ferromagnetic layer disposed adjacent to an end of the second ferromagnetic layer, the third ferromagnetic layer having a primarily in-plane magnetization providing a magnetic field to stabilize the end of the second ferromagnetic layer; an amorphous, metallic, nonmagnetic underlayer disposed adjacent to the antiferromagnetic layer; and a crystalline seed layer disposed between the underlayer and the third ferromagnetic layer, the seed layer having a crystalline structure that promotes the in-plane magnetization of the third ferromagnetic layer.

摘要翻译： 公开了一种磁传感器，其包括反铁磁层; 设置在所述反铁磁层上的第一铁磁层，所述第一铁磁层具有由所述反铁磁层固定的磁化; 设置在所述第一铁磁层上的第二铁磁层，所述第二铁磁层具有由施加的磁场旋转的磁化; 与所述第二铁磁层的端部相邻设置的第三铁磁层，所述第三铁磁层具有主要的面内磁化，提供磁场以稳定所述第二铁磁层的端部; 邻近反铁磁层设置的无定形金属非磁性底层; 以及设置在所述底层和所述第三铁磁层之间的结晶种子层，所述种子层具有促进所述第三铁磁层的平面内磁化的晶体结构。

公开(公告)号：US20090296285A1

公开(公告)日：2009-12-03

申请号：US12130389

申请日：2008-05-30

申请人： Satoru Araki ,  Ying Hong ,  Edward Hin Pong Lee ,  Tsann Lin ,  David John Seagle

发明人： Satoru Araki ,  Ying Hong ,  Edward Hin Pong Lee ,  Tsann Lin ,  David John Seagle

IPC分类号： G11B5/33 ,  G01R33/18 ,  H01L21/00 ,  B44C1/22

CPC分类号： G01R33/18 ,  G01R33/0023 ,  G11B5/3929

摘要： A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced front the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented.

摘要翻译： 一种方法的系统包括由多个薄膜层形成的传感器堆叠; 由与所述传感器堆叠的至少一些相同层形成的分流器，所述分流器与所述传感器堆叠间隔开; 耦合到传感器堆叠和分流器的第一引线; 以及耦合到传感器堆叠和分流器的第二引线。 一个实施例中的方法包括形成多个薄膜层; 去除用于限定传感器堆叠的至少一部分的薄膜层的一部分和与传感器堆叠间隔开的分流器的至少一部分; 形成耦合到传感器堆叠的至少一部分和分流器的至少一部分的第一引线和耦合到传感器堆叠的至少一部分和分流器的至少一部分的第二引线。 还介绍了其他系统和方法。