公开(公告)号：US20050035273A1

公开(公告)日：2005-02-17

申请号：US10784419

申请日：2004-02-23

Applicant: Satoshi Machida ,  Yukito Kawahara

Inventor： Satoshi Machida ,  Yukito Kawahara

IPC: H01L27/146 ,  H01L31/00 ,  H04N1/028 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369

CPC classification number: H04N5/3692 ,  H04N5/3575 ,  H04N5/363

Abstract: The invention provides a photoelectric converter capable of reducing a random noise. The photoelectric converter includes: a photoelectric conversion unit having an output terminal connected to input terminals of a reset unit and an amplification unit; a hold unit for holding a reference signal generated through resetting of the output terminal of the photoelectric conversion unit; and a signal read unit for reading out to a common signal line the reference signal and an optical signal obtained after storage of electric charges generated on the basis of light made incident to a photoelectric conversion area of the photoelectric conversion unit.

Abstract translation: 本发明提供能够减少随机噪声的光电转换器。 光电转换器包括：光电转换单元，具有连接到复位单元和放大单元的输入端的输出端; 保持单元，用于保持通过复位光电转换单元的输出端产生的参考信号; 以及信号读取单元，用于向公共信号线读出参考信号和在基于入射到光电转换单元的光电转换区域的光产生的电荷的存储之后获得的光信号。

公开(公告)号：US06589385B2

公开(公告)日：2003-07-08

申请号：US10196379

申请日：2002-07-17

Applicant: Akiyuki Minami ,  Satoshi Machida

Inventor： Akiyuki Minami ,  Satoshi Machida

IPC: H01L2100

CPC classification number: G03F7/70633 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.

公开(公告)号：US06559063B2

公开(公告)日：2003-05-06

申请号：US10061332

申请日：2002-02-04

Applicant: Akiyuki Minami ,  Satoshi Machida

Inventor： Akiyuki Minami ,  Satoshi Machida

IPC: H01L2100

CPC classification number: G03F7/70633 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.

公开(公告)号：US06512604B1

公开(公告)日：2003-01-28

申请号：US09212755

申请日：1998-12-16

Applicant: Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi

Inventor： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi

IPC: H04N146

CPC classification number: H04N1/484

Abstract: The present disclosure relates to a color image reading device that successively switches three color light sources to irradiate the color original copy and successively reads information on the original using a monochrome image sensor, and which is featured by simple construction and less reading time period. A plurality of image sensor ICs are linearly mounted. A start pulse output terminal of an anterior stage image sensor IC is connected to a start pulse input terminal of a posterior stage image sensor IC, thereby forming an image sensor block. A plurality of those image sensor blocks are provided such that start pulse input terminals of initial stage image sensor ICs in all blocks are connected together. By inputting start pulses to the terminals connected together, image signal outputs are read out simultaneously.

Abstract translation: 本发明涉及一种彩色图像读取装置，其连续地切换三色光源以照射彩色原稿，并依次使用单色图像传感器读取原稿上的信息，其结构简单，读取时间少。 多个图像传感器IC被线性地安装。 前级图像传感器IC的起始脉冲输出端子连接到后级图像传感器IC的起始脉冲输入端子，从而形成图像传感器块。 提供多个这样的图像传感器块，使得所有块中的初级图像传感器IC的起始脉冲输入端子连接在一起。 通过向连接在一起的端子输入开始脉冲，同时读出图像信号输出。

公开(公告)号：US06468825B1

公开(公告)日：2002-10-22

申请号：US09502709

申请日：2000-02-11

Applicant: Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

Inventor： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

IPC: H01L2100

CPC classification number: H01L27/0825

Abstract: A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.

Abstract translation: 制造半导体温度传感器的方法包括以下步骤：形成PNP双极晶体管和PMOS晶体管，使得每个PNP双极晶体管的基极区域和每个PMOS晶体管的相应N阱区域同时形成 ，并在达林顿连接中连接PNP双极晶体管。

公开(公告)号：US06291810B1

公开(公告)日：2001-09-18

申请号：US09299468

申请日：1999-04-26

Applicant: Masahiro Yokomichi ,  Yukito Kawahara ,  Satoshi Machida

Inventor： Masahiro Yokomichi ,  Yukito Kawahara ,  Satoshi Machida

IPC: H01L27146

CPC classification number: H04N5/3597 ,  H04N5/361 ,  H04N5/378

Abstract: A voltage at an output terminal of a photodiode is reset to a fixed voltage and an output signal of the photodiode and a dummy signal matching a dark output signal is output by a dummy photodiode comprising an identical component as that of the photodiode. The voltage difference between an input side and an output side of an amplifier is made to match the difference between a reset voltage of the photodiode and a reset voltage of a common signal line and a reset voltage of an output terminal to optimize the size of a MOS transistor forming the amplifier. The offset voltage is set to a constant which does not depend on the size of the MOS transistor. The amplifier is formed with CMOS devices and is selectively operated only during an output operation to suppress the current consumption.

Abstract translation: 光电二极管输出端的电压被复位到固定电压，光电二极管的输出信号和暗输出信号匹配的虚拟信号由包含与光电二极管相同的分量的虚拟光电二极管输出。 使放大器的输入侧和输出侧之间的电压差与光电二极管的复位电压和公共信号线的复位电压和输出端子的复位电压之间的差相匹配，以优化放大器的尺寸 MOS晶体管形成放大器。 偏移电压被设定为不依赖于MOS晶体管的尺寸的常数。 放大器由CMOS器件形成，并且仅在输出操作期间选择性地操作以抑制电流消耗。

公开(公告)号：US5665960A

公开(公告)日：1997-09-09

申请号：US618837

申请日：1996-03-20

Applicant: Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima

Inventor： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima

IPC: H01L27/146 ,  H01L31/108 ,  H04N1/028 ,  H01J40/14

CPC classification number: H04N5/3745 ,  H01L27/14654 ,  H04N5/3591 ,  H04N5/3597

Abstract: A photoelectric converter device having improved residual image characteristics and composed of a transistor having a control electrode region made of a semiconductor of a first conductivity type for accumulating carriers generated by an electromagnetic wave emitted by an object to be detected, a first main electrode region made of a semiconductor of a second conductivity type, and a second main electrode region made of a semiconductor of the second conductivity type, for performing an operation to accumulate the carriers, an operation of reading signals based on the carriers, and an operation of extinguishing the carriers, wherein carriers other than those generated by the electromagnetic wave emitted by the object to be detected are generated in or injected into the control electrode region. Thus, since the amount of excess majority carriers in the control electrode region after the extinguishing operation is always kept substantially constant, improved residual image characteristics are obtained.

Abstract translation: 一种具有改善的残留图像特性并由具有由第一导电类型的半导体构成的控制电极区域的晶体管的光电转换器装置，用于累积由待检测物体发射的电磁波产生的载流子，第一主电极区域 第二导电类型的半导体和由第二导电类型的半导体构成的第二主电极区域，用于执行累积载流子的操作，基于载流子读取信号的操作以及熄灭的操作 载体，其中由待检测对象发射的电磁波产生的载流子以外的载流子生成在或控制电极区域中。 因此，由于在灭火操作之后的控制电极区域中的多数载流子的量总是保持基本恒定，因此获得了改善的残留图像特性。

公开(公告)号：US5321303A

公开(公告)日：1994-06-14

申请号：US870808

申请日：1992-04-17

Applicant: Yukito Kawahara ,  Hiroshi Mukainakano ,  Satoshi Machida

Inventor： Yukito Kawahara ,  Hiroshi Mukainakano ,  Satoshi Machida

IPC: H01L21/301 ,  B28D5/00 ,  B28D5/02 ,  H01L21/304 ,  H01L31/02 ,  H01L29/06

CPC classification number: B28D5/022 ,  H01L21/3043

Abstract: A method for manufacturing a semiconductor device using inclined stage of a dicing saw in order to cut the semiconductor substrate obliquely with respect to the depthwise direction. When a plurality of semiconductor chips diced obliquely are connected, a degree of connecting accuracy is increased, and it is possible to realize a contact-type image sensor of high resolving power and high accuracy.

Abstract translation: 为了使半导体衬底相对于深度方向倾斜地切割，制造使用切割锯的倾斜台的半导体器件的方法。 当倾斜切割的多个半导体芯片被连接时，连接精度的程度增加，并且可以实现高分辨率和高精度的接触型图像传感器。

公开(公告)号：US5198654A

公开(公告)日：1993-03-30

申请号：US666864

申请日：1991-03-08

Applicant: Hiroshi Mukainakano ,  Yukito Kawahara ,  Satoshi Machida

Inventor： Hiroshi Mukainakano ,  Yukito Kawahara ,  Satoshi Machida

IPC: H04N1/028

CPC classification number: H04N3/1581 ,  H04N3/1512

Abstract: The image reading apparatus is of the multi-chip line sensor having a plurality of photoelectric conversion elements connected through corresponding switching elements commonly to every one another. Each group of the commonly connected photoelectric conversion elements outputs on a common line an image signal which is then fed to a sample hold circuit and is thereafter outputted from a single output terminal. By such construction, the image signal from the photoelectric conversion elements is sequentially outputted externally from the single output terminal in the form of output waveshape as held in the sample hold circuit in such manner as to prolong output duration of each bit image signal to thereby enable fast operation of the line sensor.

公开(公告)号：US5146074A

公开(公告)日：1992-09-08

申请号：US741997

申请日：1991-08-08

Applicant: Yukito Kawahara ,  Satoshi Machida ,  Hiroshi Mukainakano ,  Masahiro Yokomichi

Inventor： Yukito Kawahara ,  Satoshi Machida ,  Hiroshi Mukainakano ,  Masahiro Yokomichi

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

CPC classification number: H04N3/1518 ,  H04N3/1512

Abstract: The solid state imaging device having an array of bit units formed in a semiconductor substrate. Each bit unit is comprised of a phototransistor having a collector formed of the semiconductor substrate an emitter and a base, a switching transistor of the MOS type having a drain connected to the emitter of the phototransistor, an initializing transistor of the MOS type having a drain connected to the base of the phototransistor, a source receptive of a first reference voltage, and a gate connected to the emitter of the phototransistor, and a resetting transistor of the MOS type having a drain connected to the emitter of the phototransistor, a source receptive of a second reference voltage, and a gate receptive of a reset signal. The resetting transistor operates in the reset signal to enable the initializing transistor to initialize the phototransistor. The switching transistor drives the initialized phototransistor to effect reading of image.