Living information supply apparatus of refrigerator
    91.
    发明申请
    Living information supply apparatus of refrigerator 审中-公开
    冰箱生活信息供应装置

    公开(公告)号:US20060272341A1

    公开(公告)日:2006-12-07

    申请号:US11439421

    申请日:2006-05-24

    IPC分类号: F25B49/00

    摘要: The present invention discloses a living information supply apparatus of a refrigerator which can supply living information relating to food taken out by a user to the user. The living information supply apparatus of the refrigerator includes a reading means for reading food information from RFID on food stored in the refrigerator and/or a packing sheet and/or a container, a storing means for storing various food information and living information corresponding to the food information, a display means for displaying living information, and a microcomputer for reading the living information corresponding to the food information of the reading means from the storing means, and displaying the living information on the display means.

    摘要翻译: 本发明公开了一种冰箱的生活信息提供装置,其能够向使用者提供与用户取出的食物有关的生物信息。 冰箱的生物信息提供装置包括:读取装置,用于从存储在冰箱和/或包装纸和/或容器中的食物中的RFID读取食物信息;存储装置,用于存储各种食物信息和对应于 食物信息,用于显示生活信息的显示装置,以及从存储装置读取对应于读取装置的食物信息的生物信息并在显示装置上显示生物信息的微型计算机。

    Home network system
    92.
    发明申请
    Home network system 失效
    家庭网络系统

    公开(公告)号:US20060248228A1

    公开(公告)日:2006-11-02

    申请号:US10558435

    申请日:2004-05-14

    IPC分类号: G06F15/16

    摘要: The present invention discloses a home network system using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least one electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, wherein the protocol includes an application layer, a network layer, a data link layer and a physical layer, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code form network security when accessing the dependent transmission medium; and wherein an application layer protocol data unit (APDU) is transmitted between the application layer and the network layer, a network layer protocol data unit (NPDU) is transmitted between the network layer and the data link layer and the between the network layer and the home code control sub-layer, a home code control sub-layer protocol data unit (HCNPDU) is transmitted between the home code control sub-layer and the data link layer, and a data frame unit is transmitted between the data link layer and the physical layer.

    摘要翻译: 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括:基于预定协议的网络; 连接到网络的至少一个电气设备; 以及网络管理器,其连接到所述网络,用于控制和/或监视所述电子设备,其中所述协议包括应用层,网络层,数据链路层和物理层,其中所述物理层还包括用于 提供与依赖传输介质的接口,并且所述网络层还包括用于在访问所述从属传输介质时管理归属代码形式的网络安全性的归属代码控制子层; 并且其中应用层协议数据单元(APDU)在应用层与网络层之间传输,网络层协议数据单元(NPDU)在网络层与数据链路层之间以及网络层与网络层之间传输 归属码控制子层,归属码控制子层协议数据单元(HCNPDU)在归属码控制子层和数据链路层之间传输,数据帧单元在数据链路层和 物理层。

    Home network system
    93.
    发明申请
    Home network system 失效
    家庭网络系统

    公开(公告)号:US20060248158A1

    公开(公告)日:2006-11-02

    申请号:US10558425

    申请日:2004-05-14

    IPC分类号: G06F15/16

    摘要: The present invention discloses a home network system using a living network control protocol. The home network system includes: at least one new device including a node address having an initial logical address through a network based on a predetermined protocol, transmitting a configuration request message having the node address to a master device, receiving a temporary address setting request message, changing the initial logical address by selecting one temporary logical address, generating a temporary address setting response message, transmitting the temporary address setting response message to the master device, receiving an address change request message having a predetermined logical address from the master device, changing the temporary logical address into the received logical address, and having a unique node address; and at least one master device for receiving the plurality of configuration request messages from the new device, setting the temporary logical address range for the new device, transmitting the temporary address setting request message having the set temporary logical address range to the new device, receiving the temporary address setting response message from the new device, setting the predetermined logical address of the new device, and transmitting the address change request message having the set logical address to the new device of the selected temporary address.

    摘要翻译: 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括:至少一个新设备,包括基于预定协议通过网络具有初始逻辑地址的节点地址,向主设备发送具有节点地址的配置请求消息,接收临时地址设置请求消息 通过选择一个临时逻辑地址来改变初始逻辑地址,产生临时地址设置响应消息,向主设备发送临时地址设置响应消息,从主设备接收具有预定逻辑地址的地址改变请求消息,改变 将临时逻辑地址转换为接收的逻辑地址,并具有唯一的节点地址; 以及至少一个主设备,用于从新设备接收多个配置请求消息,设置新设备的临时逻辑地址范围,将具有设置的临时逻辑地址范围的临时地址设置请求消息发送到新设备,接收 来自新设备的临时地址设置响应消息,设置新设备的预定逻辑地址,以及将具有设置的逻辑地址的地址改变请求消息发送到所选临时地址的新设备。

    Split gate type nonvolatile memory device and method of fabricating the same
    94.
    发明申请
    Split gate type nonvolatile memory device and method of fabricating the same 失效
    分闸式非易失性存储装置及其制造方法

    公开(公告)号:US20060244042A1

    公开(公告)日:2006-11-02

    申请号:US11413640

    申请日:2006-04-28

    IPC分类号: H01L29/788

    摘要: In a split gate type nonvolatile memory device and a method of fabricating the same. A supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.

    摘要翻译: 在分闸式非易失存储器件及其制造方法中, 辅助层图案设置在半导体衬底的源极区域上。 由于源区域由于存在辅助层图案而垂直延伸,因此可以增加浮置栅极与源区域和辅助层图案重叠的区域的面积。 因此,形成在源极和浮置栅极之间的电容器的电容增加,使得非易失性存储器件可以在低电压电平下执行编程/擦除操作。

    LOCAL-LENGTH NITRIDE SONOS DEVICE HAVING SELF-ALIGNED ONO STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    95.
    发明申请
    LOCAL-LENGTH NITRIDE SONOS DEVICE HAVING SELF-ALIGNED ONO STRUCTURE AND METHOD OF MANUFACTURING THE SAME 失效
    具有自对准结构的本地长度NITRIDE SONOS器件及其制造方法

    公开(公告)号:US20060199359A1

    公开(公告)日:2006-09-07

    申请号:US11415466

    申请日:2006-05-01

    IPC分类号: H01L21/3205 H01L21/4763

    摘要: In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.

    摘要翻译: 在本地长度的氮化物SONOS器件及其形成方法中,提供局部长度的氮化物浮栅结构,用于减轻或防止氮化物浮栅中的横向电子迁移。 该结构包括薄栅极氧化物,其导致具有较低阈值电压的器件。 此外,局部长度的氮化物层是自对准的,这防止氮化物不对准,并且因此导致器件之间的阈值电压变化降低。

    UV-cured multi-component polymer blend electrolyte, lithium secondary battery and their fabrication method
    96.
    发明授权
    UV-cured multi-component polymer blend electrolyte, lithium secondary battery and their fabrication method 有权
    紫外光固化多组分聚合物共混电解质,锂二次电池及其制造方法

    公开(公告)号:US07097943B2

    公开(公告)日:2006-08-29

    申请号:US10275384

    申请日:2001-01-31

    IPC分类号: H01M6/18

    摘要: The present invention relates to a UV-cured multi-component polymer blend electrolyte, lithium secondary battery and their fabrication method, wherein the UV-cured multi-component polymer blend electrolyte, comprises: A) function-I polymer obtained by curing ethyleneglycoldi-(meth)acrylate oligomer of formula 1 by UV irradiation, CH2═CR1COO(CH2CH2O)nCOCR2═CH2 (1) wherein, R1 and R2 are independently a hydrogen or methyl group, and n is an integer of 3-20; B) function-II polymer selected from the group consisting of PAN-based polymer, PMMA-based polymer and mixtures thereof; C) function-III polymer selected from the group consisting of PVdF-based polymer, PVC-based polymer and mixtures thereof; and D) organic electrolyte solution in which lithium salt is dissolved in a solvent.

    摘要翻译: 本发明涉及一种UV固化多组分聚合物共混电解质,锂二次电池及其制造方法,其中UV固化的多组分聚合物共混电解质包括:A)通过将乙二醇( 甲基)丙烯酸酯低聚物,通过UV照射,CH 2 CO 2(CH 2 CH 2 CH 2) (1)其中,R 1和R 2各自独立地为氢, / SUP>独立地为氢或甲基,n为3-20的整数; B)选自PAN基聚合物,PMMA基聚合物及其混合物的官能团II聚合物; C)选自PVdF基聚合物,基于PVC的聚合物及其混合物的功能III聚合物; 和D)其中锂盐溶解在溶剂中的有机电解质溶液。

    Non-volatile memory device and method of manufacturing the same
    97.
    发明申请
    Non-volatile memory device and method of manufacturing the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号:US20060170034A1

    公开(公告)日:2006-08-03

    申请号:US11339741

    申请日:2006-01-25

    IPC分类号: H01L29/792

    摘要: Provided are a non-volatile memory device having an improved electric characteristic and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a substrate having a sloped portion formed therein, a first gate electrode pattern having a stacked structure in which an electric charge tunneling layer pattern, an electric charge trapping layer pattern, an electric charge shielding layer pattern, and a storage gate electrode pattern are conformably stacked on the sloped portion, a gate insulating layer pattern extending from a side of the first gate electrode pattern to the substrate, a second gate electrode pattern formed on the gate insulating layer pattern, a first junction region arranged at a side wall of the first gate electrode pattern, which does not face the second gate electrode pattern, and formed in the substrate, and a second junction region arranged at a side wall of the second gate electrode pattern, which does not face the first gate electrode pattern, and formed in the substrate.

    摘要翻译: 提供了具有改进的电特性的非易失性存储器件和制造非易失性存储器件的方法,其中非易失性存储器件包括其中形成有倾斜部分的衬底,第一栅电极图案具有堆叠 其中电荷隧道层图案,电荷捕获层图案,电荷屏蔽层图案和存储栅极电极图案顺应地堆叠在倾斜部分上的结构,从第一部分的侧面延伸的栅极绝缘层图案 栅电极图案到基板,形成在栅极绝缘层图案上的第二栅极电极图案,布置在第一栅电极图案的侧壁处的第一接合区域,其不面向第二栅电极图案,并形成在第 衬底和布置在第二栅电极图案的侧壁处的第二接合区域,其不面向顶部 t栅电极图案,并形成在基板中。