摘要:
The present invention discloses a living information supply apparatus of a refrigerator which can supply living information relating to food taken out by a user to the user. The living information supply apparatus of the refrigerator includes a reading means for reading food information from RFID on food stored in the refrigerator and/or a packing sheet and/or a container, a storing means for storing various food information and living information corresponding to the food information, a display means for displaying living information, and a microcomputer for reading the living information corresponding to the food information of the reading means from the storing means, and displaying the living information on the display means.
摘要:
The present invention discloses a home network system using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least one electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, wherein the protocol includes an application layer, a network layer, a data link layer and a physical layer, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code form network security when accessing the dependent transmission medium; and wherein an application layer protocol data unit (APDU) is transmitted between the application layer and the network layer, a network layer protocol data unit (NPDU) is transmitted between the network layer and the data link layer and the between the network layer and the home code control sub-layer, a home code control sub-layer protocol data unit (HCNPDU) is transmitted between the home code control sub-layer and the data link layer, and a data frame unit is transmitted between the data link layer and the physical layer.
摘要:
The present invention discloses a home network system using a living network control protocol. The home network system includes: at least one new device including a node address having an initial logical address through a network based on a predetermined protocol, transmitting a configuration request message having the node address to a master device, receiving a temporary address setting request message, changing the initial logical address by selecting one temporary logical address, generating a temporary address setting response message, transmitting the temporary address setting response message to the master device, receiving an address change request message having a predetermined logical address from the master device, changing the temporary logical address into the received logical address, and having a unique node address; and at least one master device for receiving the plurality of configuration request messages from the new device, setting the temporary logical address range for the new device, transmitting the temporary address setting request message having the set temporary logical address range to the new device, receiving the temporary address setting response message from the new device, setting the predetermined logical address of the new device, and transmitting the address change request message having the set logical address to the new device of the selected temporary address.
摘要:
In a split gate type nonvolatile memory device and a method of fabricating the same. A supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.
摘要:
In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.
摘要:
The present invention relates to a UV-cured multi-component polymer blend electrolyte, lithium secondary battery and their fabrication method, wherein the UV-cured multi-component polymer blend electrolyte, comprises: A) function-I polymer obtained by curing ethyleneglycoldi-(meth)acrylate oligomer of formula 1 by UV irradiation, CH2═CR1COO(CH2CH2O)nCOCR2═CH2 (1) wherein, R1 and R2 are independently a hydrogen or methyl group, and n is an integer of 3-20; B) function-II polymer selected from the group consisting of PAN-based polymer, PMMA-based polymer and mixtures thereof; C) function-III polymer selected from the group consisting of PVdF-based polymer, PVC-based polymer and mixtures thereof; and D) organic electrolyte solution in which lithium salt is dissolved in a solvent.
摘要:
Provided are a non-volatile memory device having an improved electric characteristic and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a substrate having a sloped portion formed therein, a first gate electrode pattern having a stacked structure in which an electric charge tunneling layer pattern, an electric charge trapping layer pattern, an electric charge shielding layer pattern, and a storage gate electrode pattern are conformably stacked on the sloped portion, a gate insulating layer pattern extending from a side of the first gate electrode pattern to the substrate, a second gate electrode pattern formed on the gate insulating layer pattern, a first junction region arranged at a side wall of the first gate electrode pattern, which does not face the second gate electrode pattern, and formed in the substrate, and a second junction region arranged at a side wall of the second gate electrode pattern, which does not face the first gate electrode pattern, and formed in the substrate.
摘要:
A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high etching selectivity inserted between a silicon substrate and a ferroelectric layer, and etching is performed on a portion where a source and a drain will be formed and then stopped at the buffer layer, thereby fabricating a self-aligned ferroelectric gate transistor without damage to the silicon thin film, and thus, an integration degree of a chip can be improved.
摘要:
Disclosed is an electric double-layered capacitor fabricated by inserting a UV-curing gel type polymer electrolyte having excellent characteristics of ion conductivity, adhesion to electrode, compatibility with an organic solvent electrolyte, mechanical stability, permeability, and applicability to process, between electrodes. Accordingly, the present invention increases its storage capacitance, reduces self-discharge of electricity, and decreases inner cell resistance.
摘要:
The present invention comprises: a receiving unit for receiving, through different paths, a first signal including a left-side image and a first synchronization information item, and a second signal including a right-side image and a second synchronization information item; and a signal processing unit for synchronizing and reproducing the left-side image and the right-side image using the first synchronization information item and the second synchronization information item. At least one information item, from among a content start information item, a timestamp difference between a first data item and a second data item, a frame index, a time code information item, a UTC information item, and a frame count information item, can be used as the first and second synchronization information items. Accordingly, different data can be effectively synchronized.