公开(公告)号：US20120220134A1

公开(公告)日：2012-08-30

申请号：US13468042

申请日：2012-05-10

申请人： Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

发明人： Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

IPC分类号： H01L21/461 ,  B08B5/00

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/02063

摘要： A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

摘要翻译： 描述了清除天然氧化物的方法。 提供了一种衬底，包括其中形成有自然氧化物层的暴露部分。 使用三氟化氮（NF 3）和氨（NH 3）作为反应气体对基板进行清除处理，其中NF 3的体积流量大于NH 3的体积流量。

公开(公告)号：US20110065245A1

公开(公告)日：2011-03-17

申请号：US12558565

申请日：2009-09-13

申请人： Jei-Ming Chen ,  Kuo-Chih Lai ,  Teng-Chun Tsai ,  Hsiu-Lien Liao

发明人： Jei-Ming Chen ,  Kuo-Chih Lai ,  Teng-Chun Tsai ,  Hsiu-Lien Liao

IPC分类号： H01L21/336

CPC分类号： H01L29/7833 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7843 ,  H01L29/7847

摘要： A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate and a source/drain region in the semiconductor substrate adjacent to two sides of the gate structure; covering a stress layer on the gate structure and the source/drain region; etching away the stress layer to form a plurality of openings with larger top and smaller bottom to expose surface of the gate structure and the source/drain region; forming a metal layer in the openings; and using the stress layer as a salicide block to react the metal layer with the gate structure and the source/drain region for forming a plurality of silicide layers.

摘要翻译： 公开了一种用于制造金属氧化物半导体（MOS）晶体管的方法。 该方法包括以下步骤：提供半导体衬底; 在所述半导体衬底上形成栅极结构，在所述半导体衬底中与所述栅极结构的两侧相邻的源/漏区; 覆盖栅极结构和源极/漏极区域上的应力层; 蚀刻掉应力层以形成具有较大顶部和较小底部的多个开口以暴露栅极结构和源极/漏极区域的表面; 在开口中形成金属层; 并且使用应力层作为自对准硅化物块使金属层与栅极结构和源极/漏极区域反应以形成多个硅化物层。

公开(公告)号：US20100001317A1

公开(公告)日：2010-01-07

申请号：US12168062

申请日：2008-07-03

申请人： Yi-Wei Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Jei-Ming Chen ,  Tsai-Fu Hsiao

发明人： Yi-Wei Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Jei-Ming Chen ,  Tsai-Fu Hsiao

IPC分类号： H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823814 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/7843

摘要： A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion.

摘要翻译： 公开了一种CMOS晶体管及其制造方法。 提供了至少具有PMOS晶体管和NMOS晶体管的半导体衬底。 PMOS晶体管的源极/漏极包括SiGe外延层。 执行碳注入工艺以在PMOS晶体管的源极/漏极的顶部部分中形成碳掺杂层。 在源极/漏极上形成硅化物层。 在PMOS晶体管和NMOS晶体管上形成CESL。 碳掺杂层的形成能够防止Ge扩散。

公开(公告)号：US20060157080A1

公开(公告)日：2006-07-20

申请号：US10905771

申请日：2005-01-20

申请人： Teng-Chun Tsai ,  Hsin-Kun CHU ,  Chien-Chung Huang

发明人： Teng-Chun Tsai ,  Hsin-Kun CHU ,  Chien-Chung Huang

IPC分类号： C23G1/02 ,  B08B7/00 ,  C23G1/00

CPC分类号： H01L21/02052 ,  H01L21/02065

摘要： A cleaning method according to the present invention is provided. The method includes at least two stages of cleaning processes. In the first stage, dilute HF is provided as a cleaning solution, and a brushing process is performed. In the second stage, dilute HF is also provided as a cleaning solution, and a washing process is performed. A pre-cleaning process and a post-cleaning process are further provided according to the present invention. The pre-cleaning method is performed before the brushing process, and the post-cleaning method is performed after the washing process. In addition, the pre-cleaning process and the post-cleaning process are a brushing process or a washing process adopting NH4OH as a cleaning solution.

摘要翻译： 提供了根据本发明的清洁方法。 该方法包括至少两个阶段的清洁过程。 在第一阶段中，提供稀释的HF作为清洁溶液，并进行刷洗过程。 在第二阶段中，还提供稀释的HF作为清洗溶液，并进行洗涤过程。 根据本发明进一步提供预清洗工艺和后清洗工艺。 在刷洗过程之前进行预清洗方法，并且在洗涤处理之后进行后清洗方法。 此外，预清洁处理和后清洗处理是使用NH 4 OH作为清洁溶液的刷洗方法或洗涤方法。

公开(公告)号：US20060057944A1

公开(公告)日：2006-03-16

申请号：US10711392

申请日：2004-09-16

申请人： Chia-Lin Hsu ,  Teng-Chun Tsai

发明人： Chia-Lin Hsu ,  Teng-Chun Tsai

IPC分类号： B24B1/00

CPC分类号： H01L21/7684 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/76843

摘要： A high throughput chemical mechanical polishing process is disclosed. A substrate having thereon a top bulk metal layer and a lower barrier layer is prepared. The top bulk metal layer is polished at a substantial constant removal rate to expose the barrier layer by utilizing a first platen and first slurry being selective to the barrier layer. The exposed barrier layer is then polished by using a second platen and second slurry. The first slurry has a copper to barrier polishing selectivity of greater than 30.

摘要翻译： 公开了高通量化学机械抛光工艺。 制备其上具有顶部本体金属层和下部阻挡层的基板。 顶部本体金属层以基本恒定的去除速率被抛光，以通过利用第一压板和对阻挡层有选择性的第一浆料来暴露阻挡层。 然后通过使用第二压板和第二浆料来抛光暴露的阻挡层。 第一种浆料具有大于30的铜屏障抛光选择性。

公开(公告)号：US20050148184A1

公开(公告)日：2005-07-07

申请号：US10752362

申请日：2004-01-05

申请人： Chia-Rung Hsu ,  Art Yu ,  Hsiao-Ling Lu ,  Teng-Chun Tsai

发明人： Chia-Rung Hsu ,  Art Yu ,  Hsiao-Ling Lu ,  Teng-Chun Tsai

IPC分类号： H01L21/302 ,  H01L21/3105 ,  H01L21/461 ,  H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/31053

摘要： A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.

摘要翻译： 提供了一种用于形成浅沟槽隔离结构的浅沟槽隔离（STI）多级化学机械抛光（CMP）方法。 所述基板包括致密区域和隔离区域，在所述基板上形成的氮化硅层，形成在所述氮化硅层和所述基板中的多个沟槽，形成在所述基板上方的填充所述沟槽的氧化物层， 密集区域中的沟槽小于隔离区域中的沟槽。 执行第一抛光步骤以除去氧化硅层的一部分直到氧化物层的剩余部分的厚度达到预定厚度。 执行第二抛光步骤以去除氧化硅层的剩余部分的一部分，直到暴露氮化硅层。

公开(公告)号：US20050101233A1

公开(公告)日：2005-05-12

申请号：US10718466

申请日：2003-11-19

申请人： Teng-Chun Tsai ,  Chia-Rung Hsu ,  Art Yu ,  Gene Li

发明人： Teng-Chun Tsai ,  Chia-Rung Hsu ,  Art Yu ,  Gene Li

IPC分类号： B24B37/04 ,  B24D13/14 ,  B24B5/00

CPC分类号： B24B37/26 ,  B24B37/245

摘要： A polishing element comprising a polishing platen, a polishing sub-pad and a polishing pad is provided. The polishing sub-pad is set up over the polishing platen and the polishing pad is set up over the polishing sub-pad. A first surface of the polishing sub-pad interfaces with the polishing pad and a second surface of the polishing sub-pad interfaces with the platen. Either the first surface or the second surface of the polishing sub-pad is an undulating surface.

摘要翻译： 提供了包括研磨台板，抛光辅助垫和抛光垫的抛光元件。 抛光辅助垫被设置在抛光平台上，抛光垫被设置在抛光子垫上。 抛光子焊盘的第一表面与抛光垫相接，并且抛光子焊盘的第二表面与压板接合。 抛光辅助垫的第一表面或第二表面是起伏的表面。

公开(公告)号：US06831013B2

公开(公告)日：2004-12-14

申请号：US09986929

申请日：2001-11-13

申请人： Teng-Chun Tsai ,  Chia-Lin Hsu

发明人： Teng-Chun Tsai ,  Chia-Lin Hsu

IPC分类号： H01L21302

CPC分类号： H01L21/76811 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76813

摘要： This invention relates to a method of forming a dual damascene via, in particular to a method of forming a dual damascene via by using a metal hard mask layer. The present invention uses a metal layer to be a hard mask layer to make the surface of the isolation layer become a level and smooth surface and not become a rounding convex and to prevent the via being connected with others vias to cause the leakage defects after forming the shape of the via.

摘要翻译： 本发明涉及一种形成双镶嵌层的方法，特别涉及通过使用金属硬掩模层形成双镶嵌过孔的方法。 本发明使用金属层作为硬掩模层，使得隔离层的表面变得水平和光滑的表面，并且不变成圆形凸起，并且防止通孔与其它通孔连接，以在成形之后引起泄漏缺陷 通孔的形状。

公开(公告)号：US06696361B2

公开(公告)日：2004-02-24

申请号：US09854006

申请日：2001-05-10

申请人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

发明人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

IPC分类号： H01L214763

CPC分类号： H01L21/02074 ,  H01L21/3212

摘要： A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

摘要翻译： 化学机械抛光（CMP）后从硅晶片去除污染物的方法。 在铜化学机械抛光和随后的屏障化学 - 机械抛光操作之后，施加去离子水中的臭氧水溶液以清洁硅晶片，从而去除晶片上的污染物。 或者，在铜和阻挡CMP之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。 或者，在铜CMP和阻挡CMP两者之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。

公开(公告)号：US06616510B2

公开(公告)日：2003-09-09

申请号：US09735323

申请日：2000-12-12

申请人： Chia-Lin Hsu ,  Teng-Chun Tsai ,  Yung-Tsung Wei ,  Ming-Sheng Yang

发明人： Chia-Lin Hsu ,  Teng-Chun Tsai ,  Yung-Tsung Wei ,  Ming-Sheng Yang

IPC分类号： H01L21465

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02

摘要： A chemical-mechanical polishing method for polishing a copper oxide layer and a copper layer. The copper oxide layer above the copper layer is first polished using an aqueous solution having a high concentration of polishing particles/chelating agent. The copper layer is then polished using a polishing slurry having a low concentration of polishing particles/chelating agent or the polishing slurry free of polishing particles/chelating agent. Alternatively, the copper oxide layer is polished using a mixture of the aqueous solution and the polishing slurry. After the copper oxide layer is removed, the copper layer is polished using the polishing slurry alone.